Infineon Technologies BFN26E6327HTSA1
- Part Number:
- BFN26E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3553747-BFN26E6327HTSA1
- Description:
- TRANS NPN 300V 0.2A SOT-23
- Datasheet:
- BFN26E6327HTSA1
Infineon Technologies BFN26E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BFN26E6327HTSA1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Voltage - Rated DC300V
- Max Power Dissipation360mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Current Rating200mA
- Frequency70MHz
- Base Part NumberBFN26
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation360mW
- Transistor ApplicationSWITCHING
- Halogen FreeNot Halogen Free
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)10V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 30mA 10V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 2mA, 20mA
- Collector Emitter Breakdown Voltage300V
- Transition Frequency70MHz
- Collector Emitter Saturation Voltage500mV
- Max Breakdown Voltage300V
- Collector Base Voltage (VCBO)300V
- Emitter Base Voltage (VEBO)6V
- hFE Min30
- Height900μm
- Length2.9mm
- Width1.3mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BFN26E6327HTSA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 70MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
BFN26E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 70MHz
BFN26E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN26E6327HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 70MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
BFN26E6327HTSA1 Features
the DC current gain for this device is 30 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 200mA
a transition frequency of 70MHz
BFN26E6327HTSA1 Applications
There are a lot of Infineon Technologies
BFN26E6327HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BFN26E6327HTSA1 More Descriptions
BFN26 Series NPN 300 V 200 mA SMT Silicon High-Voltage Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 300V 0.2A 360mW Automotive 3-Pin SOT-23 T/R
Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
TRANSISTOR NPN 300V 200MA VIDEO SOT23, TA
TRANSISTOR, BIPOLAR, NPN, 300V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 70MHz; Power Dissipation Pd: 360mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
NPN Silicon High-Voltage Transistors | Summary of Features: Suitable for video output stages in TV sets and switching power supplies; High breakdown voltage; Low collector-emitter saturation voltage; Complementary type: BFN27 (PNP); Pb-free (RoHS compliant) package; Qualified according AEC Q102 | Target Applications: Suitable for video output stages TV sets and switching power supplies
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 300V 0.2A 360mW Automotive 3-Pin SOT-23 T/R
Bipolar Transistors - BJT NPN Silicon Hi-Volt TRANSISTORS
TRANSISTOR NPN 300V 200MA VIDEO SOT23, TA
TRANSISTOR, BIPOLAR, NPN, 300V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 300V; Transition Frequency ft: 70MHz; Power Dissipation Pd: 360mW; DC Collector Current: 200mA; DC Current Gain hFE: 30hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
NPN Silicon High-Voltage Transistors | Summary of Features: Suitable for video output stages in TV sets and switching power supplies; High breakdown voltage; Low collector-emitter saturation voltage; Complementary type: BFN27 (PNP); Pb-free (RoHS compliant) package; Qualified according AEC Q102 | Target Applications: Suitable for video output stages TV sets and switching power supplies
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