Fairchild/ON Semiconductor BDX54C

Name: BDX54C
Brand: Fairchild/ON Semiconductor
SKU: 2463226-BDX54C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BDX54C

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463226-BDX54C

Description:: TRANS PNP DARL 100V 8A TO-220

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing BDX54/A/B/C

Specifications

Fairchild/ON Semiconductor BDX54C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BDX54C.

Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT APPLICABLE
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
NOT APPLICABLE
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
DARLINGTON WITH BUILT-IN DIODE
Power - Max
60W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Voltage - Collector Emitter Breakdown (Max)
100V
Current - Collector (Ic) (Max)
8A
RoHS Status
ROHS3 Compliant

Description

BDX54C Overview
In this device, the DC current gain is 750 @ 3A 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2V @ 12mA, 3A.There is a 100V maximal voltage in the device due to collector-emitter breakdown.

BDX54C Features
the DC current gain for this device is 750 @ 3A 3V
the vce saturation(Max) is 2V @ 12mA, 3A

BDX54C Applications
There are a lot of Rochester Electronics, LLC
BDX54C applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BDX54C More Descriptions

Transistor: PNP; bipolar; -100V; -8A; 60W; -65 150 deg.C; THT; TO220
Bipolar junction transistor, PNP, 8 A, 100 V, THT, TO-220, BDX54C
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington PNP 100V 8A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
BDX54C Series 100 V 12 A Through Hole PNP Darlington Transistor - TO-220-3
750@3A,3V 100V PNP 8A 60W TO-220-3 Darlington Transistors ROHS

Product Comparison

The three parts on the right have similar specifications to BDX54C.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

RoHS Status

Base Part Number

Supplier Device Package

Lifecycle Status

Factory Lead Time

Number of Pins

Weight

Published

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Polarity

Element Configuration

Power Dissipation

Case Connection

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

View Compare
BDX54C

Fairchild/ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

150°C TJ

Tube

e3

yes

Obsolete

1 (Unlimited)

3

MATTE TIN

SINGLE

NOT APPLICABLE

unknown

NOT APPLICABLE

3

R-PSFM-T3

COMMERCIAL

1

DARLINGTON WITH BUILT-IN DIODE

60W

SWITCHING

PNP

PNP - Darlington

750 @ 3A 3V

500μA

TO-220AB

2V @ 12mA, 3A

100V

8A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BDX54TU

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

60W

-

-

PNP - Darlington

750 @ 3A 3V

500μA

-

2V @ 12mA, 3A

45V

8A

-

BDX54

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BDX54C vs BDX54TU
BDX53TU

Fairchild/ON Semiconductor

Through Hole

TO-220-3

-

-

150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

60W

-

-

NPN - Darlington

750 @ 3A 3V

500μA

-

2V @ 12mA, 3A

45V

8A

-

BDX53

TO-220-3

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BDX54C vs BDX53TU
BDX53CG

ON Semiconductor

Through Hole

TO-220-3

NO

SILICON

-65°C~150°C TJ

Tube

e3

yes

Active

1 (Unlimited)

3

Tin (Sn)

-

260

-

40

3

-

-

1

-

-

AMPLIFIER

-

NPN - Darlington

750 @ 3A 3V

500μA

TO-220AB

2V @ 12mA, 3A

-

-

ROHS3 Compliant

BDX53

-

ACTIVE (Last Updated: 3 days ago)

7 Weeks

3

4.535924g

1999

EAR99

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

100V

65W

8A

NPN

Single

40W

COLLECTOR

100V

8A

100V

20MHz

2V

100V

5V

750

4A

9.28mm

10.28mm

4.82mm

No SVHC

No

Lead Free

BDX54C vs BDX53CG