Fairchild/ON Semiconductor BDX53C

Name: BDX53C
Brand: Fairchild/ON Semiconductor
SKU: 2463237-BDX53C
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BDX53C

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2463237-BDX53C

Description:: TRANS NPN DARL 100V 8A TO-220

ECAD Model:

Datasheet:: BDX53,54/A/B/C TO220B03 Pkg Drawing

Specifications

Fairchild/ON Semiconductor BDX53C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BDX53C.

Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Subcategory
Other Transistors
Voltage - Rated DC
100V
Max Power Dissipation
60W
Current Rating
8A
Base Part Number
BDX53
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
60W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 3A 3V
Current - Collector Cutoff (Max)
500μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
20MHz
Collector Emitter Saturation Voltage
2V
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
hFE Min
750
Continuous Collector Current
8A
Height
15.95mm
Length
10mm
Width
4.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

BDX53C Description
BDX53C is a Plastic Medium-Power Complementary Silicon Transistor from the manufacturer of ON Semiconductor with a voltage of 100V. The operating temperature of BDX53C is 150°C TJ and its maximum power dissipation is 60W. BDX53C has 3 pins and it is available in TO-220-3 packaging way. The current rating of BDX53C is 8A and its Transistor Application is AMPLIFIER.

BDX53C Features
High DC Current Gain ?hFE = 2500 (Typ) @ IC = 4.0 Adc
Collector-Emitter Sustaining Voltage
Low Collector?Emitter Saturation Voltage
Monolithic Construction with Built?In Base?Emitter Shunt Resistors
These Devices are Pb?Free and are RoHS Compliant*

BDX53C Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

BDX53C More Descriptions

Transistor: NPN; bipolar; 100V; 8A; 60W; -65 150 deg.C; THT; TO220
BDX53 Series 100 V 8 A NPN Complementary Power Darlington Transistor - TO-220
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Trans Darlington NPN 100V 8A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Transistor Darlington NPN 8A/100V 60W TO220 BDX 53 C
Power Bipolar, NPN, 3V, 12mA, TO-220, TubeSTMicroelectronics SCT
100V 750@3V,3A NPN 8A 60W TO-220 Darlington Transistors ROHS
DARLINGTON TRANSISTOR, TO-220; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:100V; Power Dissipation Pd:60W; DC Collector Current:8A; DC Current Gain hFE:750; Transistor Case Style:TO-220; No. of Pins:2; SVHC:No SVHC (19-Dec-2011); Av Current Ic:8A; Collector Emitter Voltage Vces:2V; Continuous Collector Current Ic Max:8A; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Full Power Rating Temperature:25°C; Hfe Min:750; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Ptot Max:60W; Termination Type:Through Hole; Transistor Type:Darlington; Voltage Vcbo:100V

Product Comparison

The three parts on the right have similar specifications to BDX53C.

Image

Part Number

Manufacturer

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Pin Count

Number of Elements

Polarity

Element Configuration

Power Dissipation

Case Connection

Transistor Application

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

JEDEC-95 Code

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Continuous Collector Current

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Surface Mount

Terminal Finish

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Number of Circuits

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

View Compare
BDX53C

Fairchild/ON Semiconductor

Tin

Through Hole

Through Hole

TO-220-3

3

1.8g

SILICON

150°C TJ

Bulk

2007

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

100V

60W

8A

BDX53

3

1

NPN

Single

60W

COLLECTOR

AMPLIFIER

NPN - Darlington

100V

8A

750 @ 3A 3V

500μA

TO-220AB

2V @ 12mA, 3A

100V

20MHz

2V

100V

100V

5V

750

8A

15.95mm

10mm

4.5mm

No SVHC

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BDX53BG

ON Semiconductor

-

-

Through Hole

TO-220-3

3

-

SILICON

-65°C~150°C TJ

Tube

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

80V

65W

8A

BDX53

3

1

NPN

Single

-

COLLECTOR

AMPLIFIER

NPN - Darlington

80V

8A

750 @ 3A 3V

500μA

TO-220AB

2V @ 12mA, 3A

80V

4MHz

2V

-

80V

5V

750

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 5 days ago)

2 Weeks

NO

Tin (Sn)

260

40

8

-

-

-

-

-

-

BDX53C vs BDX53BG
BDX54B-S

Bourns Inc.

-

Through Hole

Through Hole

TO-220-3

-

-

-

-65°C~150°C TJ

Tube

1993

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

2W

-

BDX54

-

1

PNP

Single

-

-

-

PNP - Darlington

80V

8A

750 @ 3A 3V

500μA

-

2V @ 12mA, 3A

80V

-

2V

-

80V

5V

750

-

-

-

-

-

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

TO-220

150°C

-65°C

2W

80V

8A

BDX53C vs BDX54B-S
BDX53CG

ON Semiconductor

-

-

Through Hole

TO-220-3

3

4.535924g

SILICON

-65°C~150°C TJ

Tube

1999

e3

yes

Active

1 (Unlimited)

3

EAR99

LEADFORM OPTIONS ARE AVAILABLE

Other Transistors

100V

65W

8A

BDX53

3

1

NPN

Single

40W

COLLECTOR

AMPLIFIER

NPN - Darlington

100V

8A

750 @ 3A 3V

500μA

TO-220AB

2V @ 12mA, 3A

100V

20MHz

2V

-

100V

5V

750

4A

9.28mm

10.28mm

4.82mm

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 3 days ago)

7 Weeks

NO

Tin (Sn)

260

40

-

-

-

-

-

-

-

BDX53C vs BDX53CG