ON Semiconductor BDW47G

BDW47G Overview
DC current gain in this device equals 1000 @ 5A 4V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 50mA, 10A.Single BJT transistor is essential to maintain the continuous collector voltage at 15A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -15A current rating.As a result, the part has a transition frequency of 4MHz.In extreme cases, the collector current can be as low as 15A volts.

BDW47G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 50mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is -15A
a transition frequency of 4MHz


BDW47G Applications
There are a lot of ON Semiconductor
BDW47G applications of single BJT transistors.


Inverter
Interface
Driver
Muting