ON Semiconductor BDW42G

BDW42G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 5A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 3V @ 50mA, 10A.Single BJT transistor is recommended to keep the continuous collector voltage at 15A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 15A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 4MHz.Single BJT transistor is possible to have a collector current as low as 15A volts at Single BJT transistors maximum.

BDW42G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 50mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 15A
a transition frequency of 4MHz


BDW42G Applications
There are a lot of ON Semiconductor
BDW42G applications of single BJT transistors.


Inverter
Interface
Driver
Muting