BD239C

STMicroelectronics BD239C

Part Number:
BD239C
Manufacturer:
STMicroelectronics
Ventron No:
2464260-BD239C
Description:
TRANS NPN 100V 2A TO-220
ECAD Model:
Datasheet:
TO220B03 Pkg Drawing

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Specifications
STMicroelectronics BD239C technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD239C.
  • Lifecycle Status
    ACTIVE (Last Updated: 7 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    2W
  • Base Part Number
    BD239
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    2W
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    100V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    15 @ 1A 4V
  • Current - Collector Cutoff (Max)
    300μA
  • JEDEC-95 Code
    TO-220AB
  • Vce Saturation (Max) @ Ib, Ic
    700mV @ 200mA, 1A
  • Collector Emitter Breakdown Voltage
    100V
  • Collector Emitter Saturation Voltage
    700mV
  • Collector Base Voltage (VCBO)
    115V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    40
  • VCEsat-Max
    0.7 V
  • Height
    9.15mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
BD239C Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.

BD239C Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V


BD239C Applications
There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BD239C More Descriptions
Bipolar junction transistor, NPN, 2 A, 115 ## Fehler ##, THT, TO-220, BD239C
BD239C Series 100 V 2 A Surface Mount NPN Power Transistor - TO-220-3
Trans GP BJT NPN 100V 2A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Pwr Transistors
Power Bipolar, NPN, 4V, 200mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-
Product Comparison
The three parts on the right have similar specifications to BD239C.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    VCEsat-Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Surface Mount
    Terminal Finish
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Published
    Pbfree Code
    Voltage - Rated DC
    Current Rating
    Frequency
    Gain Bandwidth Product
    Transition Frequency
    Lead Free
    View Compare
  • BD239C
    BD239C
    ACTIVE (Last Updated: 7 months ago)
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-220-3
    3
    4.535924g
    SILICON
    150°C TJ
    Tube
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    2W
    BD239
    3
    1
    Single
    2W
    SWITCHING
    NPN
    NPN
    100V
    2A
    15 @ 1A 4V
    300μA
    TO-220AB
    700mV @ 200mA, 1A
    100V
    700mV
    115V
    5V
    40
    0.7 V
    9.15mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BD239TU
    -
    -
    -
    -
    Through Hole
    TO-220-3
    -
    -
    SILICON
    150°C TJ
    Tube
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    -
    BD239
    -
    1
    -
    -
    SWITCHING
    NPN
    NPN
    -
    -
    15 @ 1A 4V
    300μA
    TO-220AB
    700mV @ 200mA, 1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    NO
    MATTE TIN
    SINGLE
    NOT APPLICABLE
    compliant
    NOT APPLICABLE
    R-PSFM-T3
    Not Qualified
    SINGLE
    30W
    45V
    2A
    -
    -
    -
    -
    -
    -
    -
    -
  • BD237G
    ACTIVE (Last Updated: 2 days ago)
    2 Weeks
    -
    -
    Through Hole
    TO-225AA, TO-126-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Bulk
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    25W
    BD237
    3
    1
    Single
    25W
    AMPLIFIER
    NPN
    NPN
    80V
    2A
    25 @ 1A 2V
    100μA ICBO
    -
    600mV @ 100mA, 1A
    80V
    600mV
    100V
    5V
    40
    -
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    NO
    Tin (Sn)
    -
    260
    -
    40
    -
    -
    -
    -
    -
    -
    2003
    yes
    80V
    2A
    3MHz
    3MHz
    3MHz
    Lead Free
  • BD239A-S
    -
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -65°C~150°C TJ
    Tube
    -
    Obsolete
    1 (Unlimited)
    -
    EAR99
    -
    30W
    BD239
    3
    1
    Single
    30W
    -
    -
    NPN
    60V
    2A
    15 @ 1A 4V
    300μA
    -
    700mV @ 200mA, 1A
    60V
    -
    -
    5V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    2W
    -
    -
    1993
    yes
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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