STMicroelectronics BD239C
- Part Number:
- BD239C
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2464260-BD239C
- Description:
- TRANS NPN 100V 2A TO-220
- Datasheet:
- TO220B03 Pkg Drawing
STMicroelectronics BD239C technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD239C.
- Lifecycle StatusACTIVE (Last Updated: 7 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation2W
- Base Part NumberBD239
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)100V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 1A 4V
- Current - Collector Cutoff (Max)300μA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic700mV @ 200mA, 1A
- Collector Emitter Breakdown Voltage100V
- Collector Emitter Saturation Voltage700mV
- Collector Base Voltage (VCBO)115V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- VCEsat-Max0.7 V
- Height9.15mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
BD239C Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
BD239C Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BD239C Applications
There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.The collector emitter saturation voltage is 700mV, which allows for maximum design flexibility.When VCE saturation is 700mV @ 200mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.A maximum collector current of 2A volts can be achieved.
BD239C Features
the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 200mA, 1A
the emitter base voltage is kept at 5V
BD239C Applications
There are a lot of STMicroelectronics
BD239C applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD239C More Descriptions
Bipolar junction transistor, NPN, 2 A, 115 ## Fehler ##, THT, TO-220, BD239C
BD239C Series 100 V 2 A Surface Mount NPN Power Transistor - TO-220-3
Trans GP BJT NPN 100V 2A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Pwr Transistors
Power Bipolar, NPN, 4V, 200mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-
BD239C Series 100 V 2 A Surface Mount NPN Power Transistor - TO-220-3
Trans GP BJT NPN 100V 2A 3-Pin(3 Tab) TO-220 Tube - Rail/Tube
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Bipolar Transistors - BJT NPN Pwr Transistors
Power Bipolar, NPN, 4V, 200mA, TO-220, TubeSTMicroelectronics SCT
TRANSISTOR, NPN, TO-220; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 2A; DC Current Gain hFE: 40hFE; Transistor Case Style: TO-
The three parts on the right have similar specifications to BD239C.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusSurface MountTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)PublishedPbfree CodeVoltage - Rated DCCurrent RatingFrequencyGain Bandwidth ProductTransition FrequencyLead FreeView Compare
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BD239CACTIVE (Last Updated: 7 months ago)8 WeeksTinThrough HoleThrough HoleTO-220-334.535924gSILICON150°C TJTubee3Active1 (Unlimited)3EAR99Other Transistors2WBD23931Single2WSWITCHINGNPNNPN100V2A15 @ 1A 4V300μATO-220AB700mV @ 200mA, 1A100V700mV115V5V400.7 V9.15mm10.4mm4.6mmNo SVHCNoROHS3 Compliant---------------------
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----Through HoleTO-220-3--SILICON150°C TJTubee3Obsolete1 (Unlimited)3EAR99--BD239-1--SWITCHINGNPNNPN--15 @ 1A 4V300μATO-220AB700mV @ 200mA, 1A-----------RoHS CompliantNOMATTE TINSINGLENOT APPLICABLEcompliantNOT APPLICABLER-PSFM-T3Not QualifiedSINGLE30W45V2A--------
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ACTIVE (Last Updated: 2 days ago)2 Weeks--Through HoleTO-225AA, TO-126-33-SILICON-55°C~150°C TJBulke3Active1 (Unlimited)3EAR99Other Transistors25WBD23731Single25WAMPLIFIERNPNNPN80V2A25 @ 1A 2V100μA ICBO-600mV @ 100mA, 1A80V600mV100V5V40----No SVHCNoROHS3 CompliantNOTin (Sn)-260-40------2003yes80V2A3MHz3MHz3MHzLead Free
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---Through HoleThrough HoleTO-220-33---65°C~150°C TJTube-Obsolete1 (Unlimited)-EAR99-30WBD23931Single30W--NPN60V2A15 @ 1A 4V300μA-700mV @ 200mA, 1A60V--5V------NoROHS3 Compliant---------2W--1993yes------
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