BD235

STMicroelectronics BD235

Part Number:
BD235
Manufacturer:
STMicroelectronics
Ventron No:
2468764-BD235
Description:
TRANS NPN 60V 2A SOT-32
ECAD Model:
Datasheet:
BD23x

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Specifications
STMicroelectronics BD235 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD235.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-225AA, TO-126-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    60V
  • Max Power Dissipation
    25W
  • Current Rating
    2A
  • Frequency
    3MHz
  • Base Part Number
    BD235
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    25W
  • Case Connection
    ISOLATED
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    3MHz
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN
  • Collector Emitter Voltage (VCEO)
    60V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    25 @ 1A 2V
  • Current - Collector Cutoff (Max)
    100μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 100mA, 1A
  • Collector Emitter Breakdown Voltage
    60V
  • Transition Frequency
    3MHz
  • Collector Emitter Saturation Voltage
    600mV
  • Collector Base Voltage (VCBO)
    60V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    40
  • VCEsat-Max
    0.6 V
  • Height
    10.8mm
  • Length
    7.8mm
  • Width
    2.7mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BD235 Overview
In this device, the DC current gain is 25 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).3MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.

BD235 Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz


BD235 Applications
There are a lot of STMicroelectronics
BD235 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BD235 More Descriptions
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Transistor Bipolar NPN 60V 2A SOT32
Bipolar Transistors - BJT NPN General Purpose
Trans GP BJT NPN 60V 2A 3-Pin(3 Tab) SOT-32 Tube
Product Comparison
The three parts on the right have similar specifications to BD235.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Frequency
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    VCEsat-Max
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    JEDEC-95 Code
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    View Compare
  • BD235
    BD235
    Through Hole
    Through Hole
    TO-225AA, TO-126-3
    3
    SILICON
    150°C TJ
    Tube
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Matte Tin (Sn)
    Other Transistors
    60V
    25W
    2A
    3MHz
    BD235
    3
    1
    Single
    25W
    ISOLATED
    SWITCHING
    3MHz
    NPN
    NPN
    60V
    2A
    25 @ 1A 2V
    100μA ICBO
    600mV @ 100mA, 1A
    60V
    3MHz
    600mV
    60V
    5V
    40
    0.6 V
    10.8mm
    7.8mm
    2.7mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BD239TU
    -
    Through Hole
    TO-220-3
    -
    SILICON
    150°C TJ
    Tube
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    MATTE TIN
    -
    -
    -
    -
    -
    BD239
    -
    1
    -
    -
    -
    SWITCHING
    -
    NPN
    NPN
    -
    -
    15 @ 1A 4V
    300μA
    700mV @ 200mA, 1A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    -
    NO
    SINGLE
    NOT APPLICABLE
    compliant
    NOT APPLICABLE
    R-PSFM-T3
    Not Qualified
    SINGLE
    30W
    TO-220AB
    45V
    2A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BD233STU
    -
    Through Hole
    TO-225AA, TO-126-3
    -
    SILICON
    150°C TJ
    Tube
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    -
    MATTE TIN
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    SWITCHING
    -
    NPN
    NPN
    -
    -
    25 @ 1A 2V
    100μA ICBO
    600mV @ 100mA, 1A
    -
    3MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    NO
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    R-PSFM-T3
    COMMERCIAL
    SINGLE
    25W
    -
    45V
    2A
    3MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BD239C
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    100V
    700mV @ 200mA, 1A
    NPN
    TO-220
    -
    30W
    Bulk
    TO-220-3
    150°C (TJ)
    Through Hole
    -
    15 @ 1A, 4V
    300µA
    2A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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