STMicroelectronics BD235
- Part Number:
- BD235
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2468764-BD235
- Description:
- TRANS NPN 60V 2A SOT-32
- Datasheet:
- BD23x
STMicroelectronics BD235 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD235.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation25W
- Current Rating2A
- Frequency3MHz
- Base Part NumberBD235
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation25W
- Case ConnectionISOLATED
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product3MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 1A 2V
- Current - Collector Cutoff (Max)100μA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency3MHz
- Collector Emitter Saturation Voltage600mV
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- VCEsat-Max0.6 V
- Height10.8mm
- Length7.8mm
- Width2.7mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BD235 Overview
In this device, the DC current gain is 25 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).3MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
BD235 Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD235 Applications
There are a lot of STMicroelectronics
BD235 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 25 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (2A).3MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
BD235 Features
the DC current gain for this device is 25 @ 1A 2V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 3MHz
BD235 Applications
There are a lot of STMicroelectronics
BD235 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD235 More Descriptions
Power Bipolar Transistor, 2A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Transistor Bipolar NPN 60V 2A SOT32
Bipolar Transistors - BJT NPN General Purpose
Trans GP BJT NPN 60V 2A 3-Pin(3 Tab) SOT-32 Tube
Transistor Bipolar NPN 60V 2A SOT32
Bipolar Transistors - BJT NPN General Purpose
Trans GP BJT NPN 60V 2A 3-Pin(3 Tab) SOT-32 Tube
The three parts on the right have similar specifications to BD235.
-
ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinVCEsat-MaxHeightLengthWidthRadiation HardeningRoHS StatusLead FreeSurface MountTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxJEDEC-95 CodeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Frequency - TransitionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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BD235Through HoleThrough HoleTO-225AA, TO-126-33SILICON150°C TJTubee3yesObsolete1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors60V25W2A3MHzBD23531Single25WISOLATEDSWITCHING3MHzNPNNPN60V2A25 @ 1A 2V100μA ICBO600mV @ 100mA, 1A60V3MHz600mV60V5V400.6 V10.8mm7.8mm2.7mmNoROHS3 CompliantLead Free----------------------------
-
-Through HoleTO-220-3-SILICON150°C TJTubee3-Obsolete1 (Unlimited)3EAR99MATTE TIN-----BD239-1---SWITCHING-NPNNPN--15 @ 1A 4V300μA700mV @ 200mA, 1A-----------RoHS Compliant-NOSINGLENOT APPLICABLEcompliantNOT APPLICABLER-PSFM-T3Not QualifiedSINGLE30WTO-220AB45V2A---------------
-
-Through HoleTO-225AA, TO-126-3-SILICON150°C TJTubee3yesObsolete1 (Unlimited)3-MATTE TIN-------1---SWITCHING-NPNNPN--25 @ 1A 2V100μA ICBO600mV @ 100mA, 1A-3MHz---------ROHS3 Compliant-NOSINGLENOT SPECIFIEDunknownNOT SPECIFIEDR-PSFM-T3COMMERCIALSINGLE25W-45V2A3MHz--------------
-
------------------------------------------------------------100V700mV @ 200mA, 1ANPNTO-220-30WBulkTO-220-3150°C (TJ)Through Hole-15 @ 1A, 4V300µA2A
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