ON Semiconductor BD179G

Name: BD179G
Brand: ON Semiconductor
SKU: 2845318-BD179G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD179G

Manufacturer:: ON Semiconductor

Ventron No:: 2845318-BD179G

Description:: TRANS NPN 80V 3A TO-225

ECAD Model:

Datasheet:: BD179G

Specifications

ON Semiconductor BD179G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD179G.

Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
30W
Peak Reflow Temperature (Cel)
260
Current Rating
3A
Frequency
3MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BD179
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
30W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
3MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA 2V
Current - Collector Cutoff (Max)
100μA ICBO
Vce Saturation (Max) @ Ib, Ic
800mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
3MHz
Collector Emitter Saturation Voltage
800mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
5V
hFE Min
63
Height
6.35mm
Length
31.75mm
Width
6.35mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BD179G Overview
In this device, the DC current gain is 63 @ 150mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 800mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 800mV @ 100mA, 1A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).3MHz is present in the transition frequency.Maximum collector currents can be below 3A volts.

BD179G Features
the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 3MHz

BD179G Applications
There are a lot of ON Semiconductor
BD179G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD179G More Descriptions

3.0 A, 80 V Medium Power NPN Bipolar Power Transistor
Trans GP BJT NPN 80V 3A 3-Pin TO-225 Bulk - Boxed Product (Development Kits)
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-225AA, Plastic/Epoxy, 3 Pin
BIPOLAR TRANSISTOR, NPN, 80V TO-225; TRA
Transistor, NPN, TO-126; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:3MHz; Power Dissipation Pd:30W; DC
. . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers util complementary or quasi complementary circuits.

Product Comparison

The three parts on the right have similar specifications to BD179G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mounting Type

Package / Case

Surface Mount

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

Mount

View Compare
BD179G

ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

2 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

NO

3

4.535924g

SILICON

-65°C~150°C TJ

Bulk

2006

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

80V

30W

260

3A

3MHz

40

BD179

3

1

Single

30W

AMPLIFIER

3MHz

NPN

NPN

80V

3A

63 @ 150mA 2V

100μA ICBO

800mV @ 100mA, 1A

80V

3MHz

800mV

80V

5V

63

6.35mm

31.75mm

6.35mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD1766STU

Fairchild/ON Semiconductor

-

-

-

Through Hole

TO-225AA, TO-126-3

-

-

-

-

150°C TJ

Tube

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

PNP

-

-

40 @ 150mA 2V

100μA ICBO

800mV @ 100mA, 1A

-

-

-

-

-

-

-

-

-

-

-

-

-

30W

45V

3A

3MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD179G vs BD1766STU
BD179

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

800mV @ 100mA, 1A

NPN

SOT-32

-

30W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

15 @ 2V, 1A

100µA (ICBO)

3A

-

BD179G vs BD179
BD17610STU

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 2 days ago)

36 Weeks

Tin

Through Hole

TO-225AA, TO-126-3

-

3

761mg

SILICON

150°C TJ

Tube

2002

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-45V

30W

-

-3A

3MHz

-

-

-

1

Single

30W

SWITCHING

3MHz

PNP

PNP

45V

3A

63 @ 150mA 2V

100μA ICBO

800mV @ 100mA, 1A

45V

3MHz

-800mV

-45V

-5V

40

11mm

8mm

3.25mm

-

No

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Through Hole

BD179G vs BD17610STU