Fairchild/ON Semiconductor BD14016S
- Part Number:
- BD14016S
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845167-BD14016S
- Description:
- TRANS PNP 80V 1.5A TO-126
- Datasheet:
- BD136/138/140
Fairchild/ON Semiconductor BD14016S technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BD14016S.
- Lifecycle StatusACTIVE (Last Updated: 6 days ago)
- Factory Lead Time19 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-225AA, TO-126-3
- Number of Pins3
- Weight760.986249mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC-80V
- Max Power Dissipation1.25W
- Current Rating-1.5A
- Base Part NumberBD140
- Number of Elements1
- Voltage45V
- Element ConfigurationSingle
- Current15A
- Power Dissipation1.25W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)80V
- Max Collector Current1.5A
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage80V
- Collector Emitter Saturation Voltage-500mV
- Collector Base Voltage (VCBO)80V
- Emitter Base Voltage (VEBO)5V
- hFE Min40
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BD14016S Overview
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.The maximum collector current is 1.5A volts.
BD14016S Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
BD14016S Applications
There are a lot of ON Semiconductor
BD14016S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 40 @ 150mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -500mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 5V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -1.5A.The maximum collector current is 1.5A volts.
BD14016S Features
the DC current gain for this device is 40 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
BD14016S Applications
There are a lot of ON Semiconductor
BD14016S applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BD14016S More Descriptions
Bipolar (BJT) Single Transistor, PNP, -80 V, 1.25 W, -1.5 A, 40
1.5 A, 80 V PNP Power Bipolar Junction Transistor
Transistor BD140 PNP Medium Power -80 Volt -1.5 Amp TO-126
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD140 Series 80 V CE Breakdown 1.5 A PNP Epitaxial Silicon Transistor - TO-126
Bipolar Transistors - BJT PNP Epitaxial Sil
Trans GP BJT PNP 80V 1.5A 3-Pin(3 Tab) TO-126 Bulk - Bulk
1.5 A, 80 V PNP Power Bipolar Junction Transistor
Transistor BD140 PNP Medium Power -80 Volt -1.5 Amp TO-126
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD140 Series 80 V CE Breakdown 1.5 A PNP Epitaxial Silicon Transistor - TO-126
Bipolar Transistors - BJT PNP Epitaxial Sil
Trans GP BJT PNP 80V 1.5A 3-Pin(3 Tab) TO-126 Bulk - Bulk
The three parts on the right have similar specifications to BD14016S.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountPublishedPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountHeightLengthWidthPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Terminal FinishTerminal PositionReach Compliance CodeJESD-30 CodeQualification StatusConfigurationView Compare
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BD14016SACTIVE (Last Updated: 6 days ago)19 WeeksTinThrough HoleThrough HoleTO-225AA, TO-126-33760.986249mgSILICON150°C TJBulke3yesActive1 (Unlimited)3EAR99Other Transistors-80V1.25W-1.5ABD140145VSingle15A1.25WSWITCHINGPNPPNP80V1.5A40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V-500mV80V5V40No SVHCNoROHS3 CompliantLead Free------------------
-
ACTIVE (Last Updated: 1 day ago)2 WeeksTin-Through HoleTO-225AA, TO-126-334.535924gSILICON-55°C~150°C TJBulke3yesActive1 (Unlimited)3EAR99Other Transistors-80V1.25W1.5ABD1401-Single-1.25WAMPLIFIERPNPPNP80V1.5A40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V500mV100V5V25No SVHCNoROHS3 CompliantLead FreeNO20012604036.35mm6.35mm6.35mm---------
-
----Through HoleTO-225AA, TO-126-3---150°C TJTube--Obsolete1 (Unlimited)------BD140-------PNP--40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA-----------------1.25W80V1.5A------
-
----Through HoleTO-225AA, TO-126-3--SILICON150°C TJBulke0noObsolete1 (Unlimited)3------1----AMPLIFIERPNPPNP--40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA-------Non-RoHS Compliant-NO-240303---1.25W80V1.5ATIN LEADSINGLEunknownR-PSFM-T3COMMERCIALSINGLE
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