ON Semiconductor BD140

Name: BD140
Brand: ON Semiconductor
SKU: 2466878-BD140
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD140

Manufacturer:: ON Semiconductor

Ventron No:: 2466878-BD140

Description:: TRANS PNP 80V 1.5A TO225AA

ECAD Model:

Datasheet:: BD140

Part Pictures

Specifications

ON Semiconductor BD140 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BD140.

Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
1.25W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
1.5A
RoHS Status
Non-RoHS Compliant

Description

BD140 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 40 @ 150mA 2V.When VCE saturation is 500mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 80V maximal voltage - Collector Emitter Breakdown.

BD140 Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BD140 Applications
There are a lot of Rochester Electronics, LLC
BD140 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD140 More Descriptions

Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 80V 1.5A 1250mW 3-Pin(3 Tab) SOT-32 Tube / TRANS PNP 80V 1.5A SOT-32
80V 1.25W 40@150mA,2V 1.5A PNP TO-126 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT PNP Audio Amplfier
Trans GP BJT PNP 80V 1.5A 3-Pin TO-225 Bulk
BD140 Series 80 V 1.5 A 1.25 W PNP Epitaxial Silicon Transistor - TO-126-3
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 50V X7R /-10% 1206 AEC-Q200
TRANSISTOR, BJT, PNP, -80V, -1.5A, SOT32; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: -1.5A; DC Current Gain hFE: 250hFE; T

Product Comparison

The three parts on the right have similar specifications to BD140.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Number of Pins

Weight

Published

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Base Part Number

Element Configuration

Power Dissipation

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Voltage - Collector Emitter Breakdown (Max):

Vce Saturation (Max) @ Ib, Ic:

Transistor Type:

Supplier Device Package:

Series:

Power - Max:

Packaging:

Package / Case:

Operating Temperature:

Mounting Type:

Frequency - Transition:

DC Current Gain (hFE) (Min) @ Ic, Vce:

Current - Collector Cutoff (Max):

Current - Collector (Ic) (Max):

View Compare
BD140

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

NO

SILICON

150°C TJ

Bulk

e0

no

Obsolete

1 (Unlimited)

3

TIN LEAD

SINGLE

240

unknown

30

3

R-PSFM-T3

COMMERCIAL

1

SINGLE

1.25W

AMPLIFIER

PNP

PNP

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

1.5A

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD140G

ON Semiconductor

Through Hole

TO-225AA, TO-126-3

NO

SILICON

-55°C~150°C TJ

Bulk

e3

yes

Active

1 (Unlimited)

3

-

-

260

-

40

3

-

-

1

-

-

AMPLIFIER

PNP

PNP

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 1 day ago)

2 Weeks

Tin

3

4.535924g

2001

EAR99

Other Transistors

-80V

1.25W

1.5A

BD140

Single

1.25W

80V

1.5A

80V

500mV

100V

5V

25

6.35mm

6.35mm

6.35mm

No SVHC

No

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD140 vs BD140G
BD140

STMicroelectronics

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

80V

500mV @ 50mA, 500mA

PNP

SOT-32-3

-

1.25W

Tube

TO-225AA, TO-126-3

150°C (TJ)

Through Hole

-

40 @ 150mA, 2V

100nA (ICBO)

1.5A

-
BD1406STU

Fairchild/ON Semiconductor

Through Hole

TO-225AA, TO-126-3

-

-

150°C TJ

Tube

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

-

-

-

-

-

-

1.25W

-

-

PNP

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

1.5A

-

-

-

-

-

-

-

-

-

-

-

-

BD140

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BD140 vs BD1406STU