STMicroelectronics BD140
- Part Number:
- BD140
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2845217-BD140
- Description:
- TRANS PNP 80V 1.5A SOT-32
- Datasheet:
- BD140
STMicroelectronics BD140 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD140.
- Voltage - Collector Emitter Breakdown (Max):80V
- Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
- Transistor Type:PNP
- Supplier Device Package:SOT-32-3
- Series:-
- Power - Max:1.25W
- Packaging:Tube
- Package / Case:TO-225AA, TO-126-3
- Operating Temperature:150°C (TJ)
- Mounting Type:Through Hole
- Frequency - Transition:-
- DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 150mA, 2V
- Current - Collector Cutoff (Max):100nA (ICBO)
- Current - Collector (Ic) (Max):1.5A
The BD140 is TRANS PNP 80V 1.5A SOT-32 , it is part of - series. they are designed to work as Transistors - Bipolar (BJT) - Single.BD140 with pin details manufactured by STMicroelectronics. The BD140 is available in SOT-32-3 Package,it is part of the electronic component Chips.that includes - Series. they are designed to operate as Transistors - Bipolar (BJT) - Single.it is with Operating Temperature 150°C (TJ).BD140 with original stock manufactured by STMicroelectronics. The BD140 is available in SOT-32-3 Package.Generally IC chips offer Mounting Style features such as SMD/SMT, Package Case of BD140is designed to work in TO-225AA, TO-126-3, it's Operating Temperature is 150°C (TJ).The BD140 is available in TO-225AA, TO-126-3 Package, is part of the Transistors - Bipolar (BJT) - Single and belong to Discrete Semiconductor Products.BD140 with EDA / CAD Models manufactured by STMicroelectronics. The BD140 is available in SOT-32-3Package, is part of the Discrete Semiconductor Products.The BD140 is Transistors - Bipolar (BJT) - Single with package TO-225AA, TO-126-3 manufactured by STMicroelectronics. The BD140 is available in SOT-32-3 Package, is part of the TRANS PNP 80V 1.5A SOT-32.
BD140 More Descriptions
Power Bipolar Transistor, 1A I(C), 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
Trans GP BJT PNP 80V 1.5A 1250mW 3-Pin(3 Tab) SOT-32 Tube / TRANS PNP 80V 1.5A SOT-32
80V 1.25W 40@150mA,2V 1.5A PNP TO-126 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT PNP Audio Amplfier
Trans GP BJT PNP 80V 1.5A 3-Pin TO-225 Bulk
BD140 Series 80 V 1.5 A 1.25 W PNP Epitaxial Silicon Transistor - TO-126-3
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 50V X7R /-10% 1206 AEC-Q200
TRANSISTOR, BJT, PNP, -80V, -1.5A, SOT32; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: -1.5A; DC Current Gain hFE: 250hFE; T
Trans GP BJT PNP 80V 1.5A 1250mW 3-Pin(3 Tab) SOT-32 Tube / TRANS PNP 80V 1.5A SOT-32
80V 1.25W 40@150mA,2V 1.5A PNP TO-126 Bipolar Transistors - BJT ROHS
Bipolar Transistors - BJT PNP Audio Amplfier
Trans GP BJT PNP 80V 1.5A 3-Pin TO-225 Bulk
BD140 Series 80 V 1.5 A 1.25 W PNP Epitaxial Silicon Transistor - TO-126-3
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0.1uF 50V X7R /-10% 1206 AEC-Q200
TRANSISTOR, BJT, PNP, -80V, -1.5A, SOT32; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: -; Power Dissipation Pd: 1.25W; DC Collector Current: -1.5A; DC Current Gain hFE: 250hFE; T
The three parts on the right have similar specifications to BD140.
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ImagePart NumberManufacturerVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Lifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingBase Part NumberNumber of ElementsVoltageElement ConfigurationCurrentPower DissipationTransistor ApplicationPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRadiation HardeningRoHS StatusLead FreeSurface MountTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusConfigurationPower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Reach Compliance CodePin CountView Compare
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BD14080V500mV @ 50mA, 500mAPNPSOT-32-3-1.25WTubeTO-225AA, TO-126-3150°C (TJ)Through Hole-40 @ 150mA, 2V100nA (ICBO)1.5A----------------------------------------------------------
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--------------ACTIVE (Last Updated: 6 days ago)19 WeeksTinThrough HoleThrough HoleTO-225AA, TO-126-33760.986249mgSILICON150°C TJBulke3yesActive1 (Unlimited)3EAR99Other Transistors-80V1.25W-1.5ABD140145VSingle15A1.25WSWITCHINGPNPPNP80V1.5A40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V-500mV80V5V40No SVHCNoROHS3 CompliantLead Free-------------
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------------------Through HoleTO-225AA, TO-126-3--SILICON150°C TJBulke3yesObsolete1 (Unlimited)3------1----SWITCHINGPNPPNP--63 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA-------ROHS3 Compliant-NOMATTE TINSINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T3COMMERCIALSINGLE1.25W80V1.5A--
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------------------Through HoleTO-225AA, TO-126-3--SILICON150°C TJBulke0noObsolete1 (Unlimited)3------1----AMPLIFIERPNPPNP--40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA-------Non-RoHS Compliant-NOTIN LEADSINGLE24030R-PSFM-T3COMMERCIALSINGLE1.25W80V1.5Aunknown3-
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