STMicroelectronics BD140-16

Name: BD140-16
Brand: STMicroelectronics
SKU: 2465535-BD140-16
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BD140-16

Manufacturer:: STMicroelectronics

Ventron No:: 2465535-BD140-16

Description:: TRANS PNP 80V 1.5A SOT-32

ECAD Model:

Datasheet:: BD140-16

Specifications

STMicroelectronics BD140-16 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics BD140-16.

Lifecycle Status
ACTIVE (Last Updated: 6 months ago)
Factory Lead Time
8 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Number of Pins
3
Transistor Element Material
SILICON
Manufacturer Package Identifier
SOT-32-0016114E
Operating Temperature
150°C TJ
Packaging
Tube
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
1.25W
Base Part Number
BD140
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.25W
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-80V
Max Collector Current
-3A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 2V 150MA
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
80V
Current - Collector (Ic) (Max)
1.5A
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
-500mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
hFE Min
25
Max Junction Temperature (Tj)
150°C
Height
13.2mm
Length
7.8mm
Width
2.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

BD140-16 Overview
DC current gain in this device equals 40 @ 2V 150MA, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.An emitter's base voltage can be kept at -5V to gain high efficiency.As a result, the part has a transition frequency of 75MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as -3A volts.

BD140-16 Features
the DC current gain for this device is 40 @ 2V 150MA
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at -5V
a transition frequency of 75MHz

BD140-16 Applications
There are a lot of STMicroelectronics
BD140-16 applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BD140-16 More Descriptions

Trans GP BJT PNP 80V 1.5A 1250mW 3-Pin(3 Tab) SOT-32 Tube
Power Bipolar Transistor, 1.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-126, Plastic/Epoxy, 3 Pin
BD140 Series 80 V 1.5 A 1.25 W Complementary Low Voltage Transistor - SOT-32
TRANSISTOR, PNP, SOT-32; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:80V; Power Dissipation Pd:1.25W; DC Collector Current:1.5A; DC Current Gain hFE:40; Transistor Case Style:SOT-32; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:1.5A; Current Ic Continuous a Max:1.5A; Current Ic hFE:150mA; Full Power Rating Temperature:25°C; Hfe Min:100; No. of Transistors:1; Package / Case:SOT-32; Power Dissipation Pd:1.25W; Power Dissipation Ptot Max:1.25W; Termination Type:SMD; Voltage Vcbo:80V

Product Comparison

The three parts on the right have similar specifications to BD140-16.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Manufacturer Package Identifier

Operating Temperature

Packaging

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Max Power Dissipation

Base Part Number

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Current - Collector (Ic) (Max)

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Surface Mount

Weight

Published

Pbfree Code

Voltage - Rated DC

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Lead Free

Terminal Finish

Terminal Position

JESD-30 Code

Qualification Status

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Reach Compliance Code

View Compare
BD140-16

STMicroelectronics

ACTIVE (Last Updated: 6 months ago)

8 Weeks

Tin

Through Hole

Through Hole

TO-225AA, TO-126-3

3

SILICON

SOT-32-0016114E

150°C TJ

Tube

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

1.25W

BD140

1

Single

1.25W

AMPLIFIER

PNP

PNP

-80V

-3A

40 @ 2V 150MA

100nA ICBO

500mV @ 50mA, 500mA

80V

1.5A

75MHz

-500mV

80V

-80V

-5V

25

150°C

13.2mm

7.8mm

2.7mm

No SVHC

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BD140G

ON Semiconductor

ACTIVE (Last Updated: 1 day ago)

2 Weeks

Tin

-

Through Hole

TO-225AA, TO-126-3

3

SILICON

-

-55°C~150°C TJ

Bulk

e3

Active

1 (Unlimited)

3

EAR99

Other Transistors

1.25W

BD140

1

Single

1.25W

AMPLIFIER

PNP

PNP

80V

1.5A

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

80V

-

-

500mV

-

100V

5V

25

-

6.35mm

6.35mm

6.35mm

No SVHC

No

ROHS3 Compliant

NO

4.535924g

2001

yes

-80V

260

1.5A

40

3

Lead Free

-

-

-

-

-

-

-

-

BD140-16 vs BD140G
BD14010S

Fairchild/ON Semiconductor

-

-

-

-

Through Hole

TO-225AA, TO-126-3

-

SILICON

-

150°C TJ

Bulk

e3

Obsolete

1 (Unlimited)

3

-

-

-

-

1

-

-

SWITCHING

PNP

PNP

-

-

63 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

-

1.5A

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

NO

-

-

yes

-

NOT SPECIFIED

-

NOT SPECIFIED

-

-

MATTE TIN

SINGLE

R-PSFM-T3

COMMERCIAL

SINGLE

1.25W

80V

-

BD140-16 vs BD14010S
BD140

ON Semiconductor

-

-

-

-

Through Hole

TO-225AA, TO-126-3

-

SILICON

-

150°C TJ

Bulk

e0

Obsolete

1 (Unlimited)

3

-

-

-

-

1

-

-

AMPLIFIER

PNP

PNP

-

-

40 @ 150mA 2V

100nA ICBO

500mV @ 50mA, 500mA

-

1.5A

-

-

-

-

-

-

-

-

-

-

-

-

Non-RoHS Compliant

NO

-

-

no

-

240

-

30

3

-

TIN LEAD

SINGLE

R-PSFM-T3

COMMERCIAL

SINGLE

1.25W

80V

unknown

BD140-16 vs BD140