Nexperia USA Inc. BCV49,115
- Part Number:
- BCV49,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2465339-BCV49,115
- Description:
- TRANS NPN DARL 60V 0.5A SOT89
- Datasheet:
- BCV49,115
Nexperia USA Inc. BCV49,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BCV49,115.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published1999
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBCV49
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Power Dissipation1.3W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 100μA, 100mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency220MHz
- Frequency - Transition220MHz
- VCEsat-Max1 V
- RoHS StatusROHS3 Compliant
BCV49,115 Overview
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100μA, 100mA.As a result, the part has a transition frequency of 220MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BCV49,115 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 220MHz
BCV49,115 Applications
There are a lot of Nexperia USA Inc.
BCV49,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain in this device equals 10000 @ 100mA 5V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 1V @ 100μA, 100mA.As a result, the part has a transition frequency of 220MHz.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.
BCV49,115 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 220MHz
BCV49,115 Applications
There are a lot of Nexperia USA Inc.
BCV49,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCV49,115 More Descriptions
Transistor: NPN-Darlington; bipolar; 60V; 0.5A; 1.3W; -65 150 deg.C; SMD; SOT89
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Transistor: bipolar, Darlington, NPN; 60V; 1W; SOT89
BCV49 Series 60 V 500 mA SMT NPN Darlington Transistor - SOT-89-3
Trans Darlington NPN 60V 0.5A 1300mW Automotive 4-Pin(3 Tab) SOT-89 T/R
TRANS DARL NPN 60V 0.5A SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:220MHz; Power Dissipation Pd:1.3W; DC Collector Current:500mA; DC Current Gain hFE:10000; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:220MHz; Hfe Min:10000; Package / Case:SOT-89; Power Dissipation Pd:1.3W; Termination Type:SMD; Transistor Type:Darlington
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA
Transistor: bipolar, Darlington, NPN; 60V; 1W; SOT89
BCV49 Series 60 V 500 mA SMT NPN Darlington Transistor - SOT-89-3
Trans Darlington NPN 60V 0.5A 1300mW Automotive 4-Pin(3 Tab) SOT-89 T/R
TRANS DARL NPN 60V 0.5A SOT89; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency Typ ft:220MHz; Power Dissipation Pd:1.3W; DC Collector Current:500mA; DC Current Gain hFE:10000; Operating Temperature Range:-65°C to 150°C; Transistor Case Style:SOT-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1V; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:220MHz; Hfe Min:10000; Package / Case:SOT-89; Power Dissipation Pd:1.3W; Termination Type:SMD; Transistor Type:Darlington
The three parts on the right have similar specifications to BCV49,115.
-
ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityPower DissipationCase ConnectionTransistor ApplicationTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionVCEsat-MaxRoHS StatusPbfree CodeReach Compliance CodeReference StandardJESD-30 CodePower - MaxPolarity/Channel TypeContact PlatingMountMax Power DissipationElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningView Compare
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BCV49,1154 WeeksSurface MountTO-243AAYES3SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1011999e3Active1 (Unlimited)3EAR99Tin (Sn)8541.29.00.75SINGLEFLATNOT SPECIFIEDNOT SPECIFIEDBCV493Not Qualified1NPN1.3WCOLLECTORAMPLIFIERNPN - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA60V500mA220MHz220MHz1 VROHS3 Compliant--------------------
-
-Surface MountTO-243AAYES-SILICON150°C TJTape & Reel (TR)-2011-Obsolete1 (Unlimited)3EAR99--SINGLEFLATNOT SPECIFIEDNOT SPECIFIEDBCV493-1--COLLECTOR-NPN - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA60V500mA150MHz150MHz-RoHS CompliantyescompliantAEC-Q101R-PSSO-F31WNPN-------------
-
26 WeeksSurface MountTO-243AA-3SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012011e3Not For New Designs1 (Unlimited)3EAR99---FLAT-----1NPN-COLLECTORAMPLIFIERNPN - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA--150MHz150MHz-ROHS3 Compliant----1W-TinSurface Mount1WSingle60V500mA60V1V60V80V10V2000No
-
4 WeeksSurface MountTO-236-3, SC-59, SOT-23-3-3SILICON150°C TJTape & Reel (TR)Automotive, AEC-Q1012006e3Active1 (Unlimited)3EAR99--DUALGULL WING--BCV473-1NPN--AMPLIFIERNPN - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA--220MHz220MHz-ROHS3 Compliant----250mW-TinSurface Mount250mWSingle60V500mA60V1V60V80V10V-No
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