Infineon Technologies BCV47E6433HTMA1
- Part Number:
- BCV47E6433HTMA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585849-BCV47E6433HTMA1
- Description:
- TRANS NPN DARL 60V 0.5A SOT-23
- Datasheet:
- BCV47E6433HTMA1
Infineon Technologies BCV47E6433HTMA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCV47E6433HTMA1.
- Factory Lead Time4 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2005
- Pbfree Codeyes
- Part StatusLast Time Buy
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBCV47
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- Power - Max360mW
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 100μA, 100mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency170MHz
- Frequency - Transition170MHz
- RoHS StatusROHS3 Compliant
BCV47E6433HTMA1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100μA, 100mA.The part has a transition frequency of 170MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).
BCV47E6433HTMA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 170MHz
BCV47E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCV47E6433HTMA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 10000 @ 100mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 100μA, 100mA.The part has a transition frequency of 170MHz.Device displays Collector Emitter Breakdown (60V maximal voltage).
BCV47E6433HTMA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 170MHz
BCV47E6433HTMA1 Applications
There are a lot of Infineon Technologies
BCV47E6433HTMA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCV47E6433HTMA1 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon
Trans Darlington NPN 60V 0.5A 360mW Automotive 3-Pin SOT-23 T/R
Darlington Transistors NPN Silicn Darlingtn TRANSISTOR
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 1500pF 250volt X7R /-10%
Trans Darlington NPN 60V 0.5A 360mW Automotive 3-Pin SOT-23 T/R
Darlington Transistors NPN Silicn Darlingtn TRANSISTOR
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0805 1500pF 250volt X7R /-10%
The three parts on the right have similar specifications to BCV47E6433HTMA1.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberJESD-30 CodeQualification StatusNumber of ElementsPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusReach Compliance CodePin CountReference StandardCase ConnectionVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Contact PlatingMountNumber of PinsSeriesJESD-609 CodeMax Power DissipationPolarityElement ConfigurationTransistor ApplicationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningView Compare
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BCV47E6433HTMA14 WeeksSurface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2005yesLast Time Buy1 (Unlimited)3EAR99DUALGULL WINGNOT SPECIFIEDNOT SPECIFIEDBCV47R-PDSO-G3Not Qualified1360mWNPNNPN - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA60V500mA170MHz170MHzROHS3 Compliant-------------------------------------
-
-Surface MountTO-243AAYESSILICON150°C TJTape & Reel (TR)2011yesObsolete1 (Unlimited)3EAR99SINGLEFLATNOT SPECIFIEDNOT SPECIFIEDBCV49R-PSSO-F3-11WNPNNPN - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA60V500mA150MHz150MHzRoHS Compliantcompliant3AEC-Q101COLLECTOR--------------------------------
-
------------------------------------60V1V @ 100µA, 100mANPN - DarlingtonSOT-23-350mWTape & Reel (TR)TO-236-3, SC-59, SOT-23-3-65°C ~ 150°C (TJ)Surface Mount220MHz10000 @ 100mA, 5V100nA (ICBO)500mA------------------
-
26 WeeksSurface MountTO-243AA-SILICON150°C TJTape & Reel (TR)2011-Not For New Designs1 (Unlimited)3EAR99-FLAT-----11W-NPN - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA--150MHz150MHzROHS3 Compliant---COLLECTOR--------------TinSurface Mount3Automotive, AEC-Q101e31WNPNSingleAMPLIFIER60V500mA60V1V60V80V10V2000No
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