Infineon Technologies BCV49E6327HTSA1
- Part Number:
- BCV49E6327HTSA1
- Manufacturer:
- Infineon Technologies
- Ventron No:
- 3585265-BCV49E6327HTSA1
- Description:
- TRANS NPN DARL 60V 0.5A SOT-89
- Datasheet:
- BCV29, BCV49
Infineon Technologies BCV49E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCV49E6327HTSA1.
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal PositionSINGLE
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codecompliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberBCV49
- Pin Count3
- Reference StandardAEC-Q101
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Case ConnectionCOLLECTOR
- Power - Max1W
- Polarity/Channel TypeNPN
- Transistor TypeNPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce10000 @ 100mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic1V @ 100μA, 100mA
- Voltage - Collector Emitter Breakdown (Max)60V
- Current - Collector (Ic) (Max)500mA
- Transition Frequency150MHz
- Frequency - Transition150MHz
- RoHS StatusRoHS Compliant
BCV49E6327HTSA1 Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
BCV49E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 150MHz
BCV49E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV49E6327HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.
BCV49E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 150MHz
BCV49E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV49E6327HTSA1 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BCV49E6327HTSA1 More Descriptions
Trans Darlington NPN 60V 0.5A Automotive 4-Pin(3 Tab) SOT-89 T/R
MURATA GRJ21AR72E332KWJ1D SMD Multilayer Ceramic Capacitor, 3300 pF,10%, X7R, 250 V, 0805 [2012 Metric]
MURATA GRJ21AR72E332KWJ1D SMD Multilayer Ceramic Capacitor, 3300 pF,10%, X7R, 250 V, 0805 [2012 Metric]
The three parts on the right have similar specifications to BCV49E6327HTSA1.
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ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountReference StandardJESD-30 CodeNumber of ElementsCase ConnectionPower - MaxPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusFactory Lead TimeNumber of PinsSeriesJESD-609 CodeTerminal FinishHTS CodePolarityTransistor ApplicationVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):Contact PlatingMountMax Power DissipationElement ConfigurationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRadiation HardeningView Compare
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BCV49E6327HTSA1Surface MountTO-243AAYESSILICON150°C TJTape & Reel (TR)2011yesObsolete1 (Unlimited)3EAR99SINGLEFLATNOT SPECIFIEDcompliantNOT SPECIFIEDBCV493AEC-Q101R-PSSO-F31COLLECTOR1WNPNNPN - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA60V500mA150MHz150MHzRoHS Compliant------------------------------------
-
Surface MountTO-236-3, SC-59, SOT-23-3YESSILICON150°C TJTape & Reel (TR)2009-Active1 (Unlimited)3EAR99DUALGULL WING---BCV463--1-250mW-PNP - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA60V500mA220MHz220MHzROHS3 Compliant4 Weeks3Automotive, AEC-Q101e3Tin (Sn)8541.21.00.75PNPAMPLIFIER---------------------------
-
------------------------------------------60V1V @ 100µA, 100mANPN - DarlingtonSOT-23-350mWTape & Reel (TR)TO-236-3, SC-59, SOT-23-3-65°C ~ 150°C (TJ)Surface Mount220MHz10000 @ 100mA, 5V100nA (ICBO)500mA-------------
-
Surface MountTO-243AA-SILICON150°C TJTape & Reel (TR)2011-Not For New Designs1 (Unlimited)3EAR99-FLAT-------1COLLECTOR1W-NPN - Darlington10000 @ 100mA 5V100nA ICBO1V @ 100μA, 100mA--150MHz150MHzROHS3 Compliant26 Weeks3Automotive, AEC-Q101e3--NPNAMPLIFIER--------------TinSurface Mount1WSingle60V500mA60V1V60V80V10V2000No
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