BCV49E6327HTSA1

Infineon Technologies BCV49E6327HTSA1

Part Number:
BCV49E6327HTSA1
Manufacturer:
Infineon Technologies
Ventron No:
3585265-BCV49E6327HTSA1
Description:
TRANS NPN DARL 60V 0.5A SOT-89
ECAD Model:
Datasheet:
BCV29, BCV49

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Specifications
Infineon Technologies BCV49E6327HTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies BCV49E6327HTSA1.
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Surface Mount
    YES
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Position
    SINGLE
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    BCV49
  • Pin Count
    3
  • Reference Standard
    AEC-Q101
  • JESD-30 Code
    R-PSSO-F3
  • Number of Elements
    1
  • Case Connection
    COLLECTOR
  • Power - Max
    1W
  • Polarity/Channel Type
    NPN
  • Transistor Type
    NPN - Darlington
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    10000 @ 100mA 5V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    1V @ 100μA, 100mA
  • Voltage - Collector Emitter Breakdown (Max)
    60V
  • Current - Collector (Ic) (Max)
    500mA
  • Transition Frequency
    150MHz
  • Frequency - Transition
    150MHz
  • RoHS Status
    RoHS Compliant
Description
BCV49E6327HTSA1 Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 100μA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.There is a 60V maximal voltage in the device due to collector-emitter breakdown.

BCV49E6327HTSA1 Features
the DC current gain for this device is 10000 @ 100mA 5V
the vce saturation(Max) is 1V @ 100μA, 100mA
a transition frequency of 150MHz


BCV49E6327HTSA1 Applications
There are a lot of Infineon Technologies
BCV49E6327HTSA1 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BCV49E6327HTSA1 More Descriptions
Trans Darlington NPN 60V 0.5A Automotive 4-Pin(3 Tab) SOT-89 T/R
MURATA GRJ21AR72E332KWJ1D SMD Multilayer Ceramic Capacitor, 3300 pF,10%, X7R, 250 V, 0805 [2012 Metric]
Product Comparison
The three parts on the right have similar specifications to BCV49E6327HTSA1.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Reference Standard
    JESD-30 Code
    Number of Elements
    Case Connection
    Power - Max
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Factory Lead Time
    Number of Pins
    Series
    JESD-609 Code
    Terminal Finish
    HTS Code
    Polarity
    Transistor Application
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    Contact Plating
    Mount
    Max Power Dissipation
    Element Configuration
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Radiation Hardening
    View Compare
  • BCV49E6327HTSA1
    BCV49E6327HTSA1
    Surface Mount
    TO-243AA
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2011
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    SINGLE
    FLAT
    NOT SPECIFIED
    compliant
    NOT SPECIFIED
    BCV49
    3
    AEC-Q101
    R-PSSO-F3
    1
    COLLECTOR
    1W
    NPN
    NPN - Darlington
    10000 @ 100mA 5V
    100nA ICBO
    1V @ 100μA, 100mA
    60V
    500mA
    150MHz
    150MHz
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BCV46,215
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    YES
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2009
    -
    Active
    1 (Unlimited)
    3
    EAR99
    DUAL
    GULL WING
    -
    -
    -
    BCV46
    3
    -
    -
    1
    -
    250mW
    -
    PNP - Darlington
    10000 @ 100mA 5V
    100nA ICBO
    1V @ 100μA, 100mA
    60V
    500mA
    220MHz
    220MHz
    ROHS3 Compliant
    4 Weeks
    3
    Automotive, AEC-Q101
    e3
    Tin (Sn)
    8541.21.00.75
    PNP
    AMPLIFIER
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BCV47 TR
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    1V @ 100µA, 100mA
    NPN - Darlington
    SOT-23
    -
    350mW
    Tape & Reel (TR)
    TO-236-3, SC-59, SOT-23-3
    -65°C ~ 150°C (TJ)
    Surface Mount
    220MHz
    10000 @ 100mA, 5V
    100nA (ICBO)
    500mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BCV49H6327XTSA1
    Surface Mount
    TO-243AA
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2011
    -
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    -
    FLAT
    -
    -
    -
    -
    -
    -
    -
    1
    COLLECTOR
    1W
    -
    NPN - Darlington
    10000 @ 100mA 5V
    100nA ICBO
    1V @ 100μA, 100mA
    -
    -
    150MHz
    150MHz
    ROHS3 Compliant
    26 Weeks
    3
    Automotive, AEC-Q101
    e3
    -
    -
    NPN
    AMPLIFIER
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Tin
    Surface Mount
    1W
    Single
    60V
    500mA
    60V
    1V
    60V
    80V
    10V
    2000
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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