Fairchild/ON Semiconductor BC848AMTF
- Part Number:
- BC848AMTF
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2846187-BC848AMTF
- Description:
- TRANS NPN 30V 0.1A SOT-23
- Datasheet:
- BC846-BC850 Datasheet
Fairchild/ON Semiconductor BC848AMTF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC848AMTF.
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max310mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce110 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency300MHz
- Frequency - Transition300MHz
- RoHS StatusROHS3 Compliant
BC848AMTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 110 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A transition frequency of 300MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
BC848AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 300MHz
BC848AMTF Applications
There are a lot of Rochester Electronics, LLC
BC848AMTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 110 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 600mV @ 5mA, 100mA.A transition frequency of 300MHz is present in the part.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
BC848AMTF Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 300MHz
BC848AMTF Applications
There are a lot of Rochester Electronics, LLC
BC848AMTF applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC848AMTF More Descriptions
Tape & Reel (TR) Surface Mount NPN Single Bipolar (BJT) Transistor 110 @ 2mA 5V 15nA ICBO 310mW 300MHz
Trans GP BJT NPN 30V 0.1A 310mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT SOT-23 NPN GP AMP
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Trans GP BJT NPN 30V 0.1A 310mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Bipolar Transistors - BJT SOT-23 NPN GP AMP
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
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