ON Semiconductor BC817-25LT3G

Name: BC817-25LT3G
Brand: ON Semiconductor
SKU: 3553781-BC817-25LT3G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC817-25LT3G

Manufacturer:: ON Semiconductor

Ventron No:: 3553781-BC817-25LT3G

Description:: TRANS NPN 45V 0.5A SOT-23

ECAD Model:

Datasheet:: BC817-25LT3G

Specifications

ON Semiconductor BC817-25LT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC817-25LT3G.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
10 Weeks
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
300mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
100MHz
Time@Peak Reflow Temperature-Max (s)
40
Base Part Number
BC817
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
300mW
Halogen Free
Halogen Free
Gain Bandwidth Product
100MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
160 @ 100mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
700mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
45V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
700mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
hFE Min
160
Height
940μm
Length
2.9mm
Width
1.3mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC817-25LT3G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 100mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 700mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 700mV @ 50mA, 500mA.The emitter base voltage can be kept at 5V for high efficiency.The part has a transition frequency of 100MHz.The breakdown input voltage is 45V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BC817-25LT3G Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-25LT3G Applications
There are a lot of ON Semiconductor
BC817-25LT3G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC817-25LT3G More Descriptions

ON Semi BC817-25LT3G NPN Bipolar Transistor; 0.5 A; 45 V; 3-Pin SOT-23
BC817 Series 45 V 500 mA SMT NPN Silicon General Purpose Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
TRANS NPN 45V 0.5A SOT-23 / Trans GP BJT NPN 45V 0.5A 300mW 3-Pin SOT-23 T/R
45V 225mW 500mA 160@100mA1V 100MHz 700mV@500mA50mA NPN -65¡Í~ 150¡Í@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS
TRANSISTOR, BIPOL, NPN, 45V, SOT-23-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 225mW; DC Collector Current: 500mA; DC Current Gain hFE: 40hFE; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

Certification