Nexperia USA Inc. BC807-25W,115
- Part Number:
- BC807-25W,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2463782-BC807-25W,115
- Description:
- TRANS PNP 45V 0.5A SOT323
- ECAD Model:
-
- Datasheet:
- BC807-25W,115
Nexperia USA Inc. BC807-25W,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC807-25W,115.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published1999
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Frequency80MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC807
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product80MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)45V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 100mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic700mV @ 50mA, 500mA
- Collector Emitter Breakdown Voltage45V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage700mV
- Max Breakdown Voltage45V
- Collector Base Voltage (VCBO)50V
- Emitter Base Voltage (VEBO)5V
- VCEsat-Max0.7 V
- Height1mm
- Length2.2mm
- Width1.35mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
BC807-25W,115 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC807-25W,115 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25W,115 Applications
There are a lot of Nexperia USA Inc.
BC807-25W,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 160 @ 100mA 1V DC current gain.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.There is a transition frequency of 100MHz in the part.Single BJT transistor can be broken down at a voltage of 45V volts.When collector current reaches its maximum, it can reach 500mA volts.
BC807-25W,115 Features
the DC current gain for this device is 160 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
BC807-25W,115 Applications
There are a lot of Nexperia USA Inc.
BC807-25W,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC807-25W,115 More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon
vp_BC807W_SER - 45 V, 500 mA PNP general-purpose transistors
Transistor GP BJT PNP 45V 500mA 3-Pin SOT-23
Trans GP BJT PNP 45V 0.5A Automotive 3-Pin SC-70 T/R
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ, ft:80MHz; Power Dissipation Pd:200mW; DC Collector Current:-500mA; DC Current Gain Max (hfe):160 ;RoHS Compliant: Yes
vp_BC807W_SER - 45 V, 500 mA PNP general-purpose transistors
Transistor GP BJT PNP 45V 500mA 3-Pin SOT-23
Trans GP BJT PNP 45V 0.5A Automotive 3-Pin SC-70 T/R
Bipolar Transistor; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-45V; Transition Frequency Typ, ft:80MHz; Power Dissipation Pd:200mW; DC Collector Current:-500mA; DC Current Gain Max (hfe):160 ;RoHS Compliant: Yes
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