Nexperia USA Inc. BC69-25PA,115
- Part Number:
- BC69-25PA,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464139-BC69-25PA,115
- Description:
- TRANSISTOR PNP 20V 2A SOT1061
- Datasheet:
- BC69-25PA,115
Nexperia USA Inc. BC69-25PA,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC69-25PA,115.
- Factory Lead Time8 Weeks
- Mounting TypeSurface Mount
- Package / Case3-PowerUDFN
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishTin (Sn)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Pin Count3
- Reference StandardAEC-Q101; IEC-60134
- JESD-30 CodeS-PDSO-N3
- Number of Elements1
- ConfigurationSINGLE
- Case ConnectionCOLLECTOR
- Power - Max420mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce160 @ 500mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 200mA, 2A
- Voltage - Collector Emitter Breakdown (Max)20V
- Current - Collector (Ic) (Max)2A
- Transition Frequency140MHz
- Frequency - Transition140MHz
- RoHS StatusROHS3 Compliant
BC69-25PA,115 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 200mA, 2A.The part has a transition frequency of 140MHz.Device displays Collector Emitter Breakdown (20V maximal voltage).
BC69-25PA,115 Features
the DC current gain for this device is 160 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
a transition frequency of 140MHz
BC69-25PA,115 Applications
There are a lot of Nexperia USA Inc.
BC69-25PA,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 160 @ 500mA 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 200mA, 2A.The part has a transition frequency of 140MHz.Device displays Collector Emitter Breakdown (20V maximal voltage).
BC69-25PA,115 Features
the DC current gain for this device is 160 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
a transition frequency of 140MHz
BC69-25PA,115 Applications
There are a lot of Nexperia USA Inc.
BC69-25PA,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC69-25PA,115 More Descriptions
20V 420mW 2A PNP HUSON-3 Bipolar Transistors - BJT ROHS
20 V, 2 A PNP medium power transistor
Trans GP BJT PNP 20V 2A Automotive 3-Pin HUSON T/R
TRANS, PNP, 20V, 2A, SOT1061; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -20V; Transition Frequency ft: 140MHz; Power Dissipation Pd: 1.65W; DC Collector Current: -2A; DC Current Gain hFE: 160hFE; Transistor
Transistor, Pnp, 20V, 2A, Sot1061; Transistor Polarity:Pnp; Collector Emitter Voltage Max:20V; Continuous Collector Current:2A; Power Dissipation:1.65W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Nexperia BC69-25PA,115
20 V, 2 A PNP medium power transistor
Trans GP BJT PNP 20V 2A Automotive 3-Pin HUSON T/R
TRANS, PNP, 20V, 2A, SOT1061; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -20V; Transition Frequency ft: 140MHz; Power Dissipation Pd: 1.65W; DC Collector Current: -2A; DC Current Gain hFE: 160hFE; Transistor
Transistor, Pnp, 20V, 2A, Sot1061; Transistor Polarity:Pnp; Collector Emitter Voltage Max:20V; Continuous Collector Current:2A; Power Dissipation:1.65W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Nexperia BC69-25PA,115
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