Nexperia USA Inc. BC69PA,115
- Part Number:
- BC69PA,115
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2464156-BC69PA,115
- Description:
- TRANSISTOR PNP 20V 2A SOT1061
- Datasheet:
- BC69PA,115
Nexperia USA Inc. BC69PA,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC69PA,115.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-PowerUDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2011
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Max Power Dissipation420mW
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)260
- Frequency140MHz
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE
- Power Dissipation1.65W
- Case ConnectionCOLLECTOR
- Power - Max420mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 500mA 1V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 200mA, 2A
- Collector Emitter Breakdown Voltage20V
- Transition Frequency140MHz
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)32V
- Emitter Base Voltage (VEBO)5V
- RoHS StatusROHS3 Compliant
BC69PA,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2A volts.
BC69PA,115 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
BC69PA,115 Applications
There are a lot of Nexperia USA Inc.
BC69PA,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2A volts.
BC69PA,115 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz
BC69PA,115 Applications
There are a lot of Nexperia USA Inc.
BC69PA,115 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC69PA,115 More Descriptions
20 V, 2 A PNP medium power transistor
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC69PA,115
Trans GP BJT PNP 20V 2A 3-Pin HUSON T/R
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC69PA,115
Trans GP BJT PNP 20V 2A 3-Pin HUSON T/R
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