BC69PA,115

Nexperia USA Inc. BC69PA,115

Part Number:
BC69PA,115
Manufacturer:
Nexperia USA Inc.
Ventron No:
2464156-BC69PA,115
Description:
TRANSISTOR PNP 20V 2A SOT1061
ECAD Model:
Datasheet:
BC69PA,115

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Specifications
Nexperia USA Inc. BC69PA,115 technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. BC69PA,115.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-PowerUDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2011
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Max Power Dissipation
    420mW
  • Terminal Position
    DUAL
  • Terminal Form
    NO LEAD
  • Peak Reflow Temperature (Cel)
    260
  • Frequency
    140MHz
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    1.65W
  • Case Connection
    COLLECTOR
  • Power - Max
    420mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    20V
  • Max Collector Current
    2A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    85 @ 500mA 1V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    600mV @ 200mA, 2A
  • Collector Emitter Breakdown Voltage
    20V
  • Transition Frequency
    140MHz
  • Max Breakdown Voltage
    20V
  • Collector Base Voltage (VCBO)
    32V
  • Emitter Base Voltage (VEBO)
    5V
  • RoHS Status
    ROHS3 Compliant
Description
BC69PA,115 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 85 @ 500mA 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 200mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 140MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 2A volts.

BC69PA,115 Features
the DC current gain for this device is 85 @ 500mA 1V
the vce saturation(Max) is 600mV @ 200mA, 2A
the emitter base voltage is kept at 5V
a transition frequency of 140MHz


BC69PA,115 Applications
There are a lot of Nexperia USA Inc.
BC69PA,115 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC69PA,115 More Descriptions
20 V, 2 A PNP medium power transistor
Transistor, Bipolar Rohs Compliant: Yes |Nexperia BC69PA,115
Trans GP BJT PNP 20V 2A 3-Pin HUSON T/R
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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