BC640TA

Fairchild/ON Semiconductor BC640TA

Part Number:
BC640TA
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3585047-BC640TA
Description:
TRANS PNP 80V 1A TO-92
ECAD Model:
Datasheet:
BC640TA

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Specifications
Fairchild/ON Semiconductor BC640TA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC640TA.
  • Factory Lead Time
    6 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Number of Pins
    3
  • Weight
    240.007063mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Box (TB)
  • Published
    2007
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -80V
  • Max Power Dissipation
    1W
  • Terminal Position
    BOTTOM
  • Current Rating
    -1A
  • Frequency
    100MHz
  • Base Part Number
    BC640
  • Number of Elements
    1
  • Voltage
    80V
  • Element Configuration
    Single
  • Current
    1A
  • Power Dissipation
    1W
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    100MHz
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    80V
  • Max Collector Current
    1A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    40 @ 150mA 2V
  • Current - Collector Cutoff (Max)
    100nA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    500mV @ 50mA, 500mA
  • Collector Emitter Breakdown Voltage
    80V
  • Transition Frequency
    100MHz
  • Collector Emitter Saturation Voltage
    -500mV
  • Max Breakdown Voltage
    80V
  • Collector Base Voltage (VCBO)
    -100V
  • Emitter Base Voltage (VEBO)
    5V
  • hFE Min
    40
  • Height
    4.58mm
  • Length
    4.58mm
  • Width
    3.86mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC640TA Description
The ON Semiconductor BC640TA is  PNP Bipolar Transistor designed for use in linear and switching applications. The BC640TA is housed in the TO-92 package, which is designed for medium power applications.

BC640TA Features 
Pb-Free Packages are Available
Housed in the TO-92 package

BC640TA Applications
ESD Protection
Polarity Reversal Protection
Data Line Protection
Inductive Load Protection
Steering Logic
BC640TA More Descriptions
BC640 Series 80 V 1 A 1 W PNP Epitaxial Silicon Transistor - TO-92-3
Bipolar Transistors - BJT TO-92 PNP GP AMP
80V 1W 1A 40@150mA2V 100MHz 500mV@500mA50mA PNP 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
General Purpose Transistor, TO-92, PNP, 80V
TRANS, PNP, -80V, -0.5A, 1.5W, TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 1.5W; DC Collector Current: -500mA; DC Current Gain hFE: 25hFE; T
Product Comparison
The three parts on the right have similar specifications to BC640TA.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Terminal Position
    Current Rating
    Frequency
    Base Part Number
    Number of Elements
    Voltage
    Element Configuration
    Current
    Power Dissipation
    Transistor Application
    Gain Bandwidth Product
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Max Breakdown Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Supplier Device Package
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Frequency - Transition
    Lifecycle Status
    Surface Mount
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    HTS Code
    Reach Compliance Code
    JESD-30 Code
    Configuration
    Power Dissipation-Max (Abs)
    VCEsat-Max
    View Compare
  • BC640TA
    BC640TA
    6 Weeks
    Tin
    Through Hole
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    3
    240.007063mg
    SILICON
    150°C TJ
    Tape & Box (TB)
    2007
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -80V
    1W
    BOTTOM
    -1A
    100MHz
    BC640
    1
    80V
    Single
    1A
    1W
    SWITCHING
    100MHz
    PNP
    PNP
    80V
    1A
    40 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    80V
    100MHz
    -500mV
    80V
    -100V
    5V
    40
    4.58mm
    4.58mm
    3.86mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC640-016G
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    -
    -
    -55°C~150°C TJ
    Bulk
    -
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    PNP
    -
    -
    100 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    TO-92-3
    625mW
    80V
    500mA
    150MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC640G
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    3
    -
    SILICON
    -55°C~150°C TJ
    Bulk
    2005
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -80V
    625mW
    BOTTOM
    -500mA
    150MHz
    BC640
    1
    -
    Single
    -
    625mW
    -
    150MHz
    PNP
    PNP
    500mV
    500mA
    40 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    80V
    150MHz
    -500mV
    -
    -80V
    5V
    25
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    OBSOLETE (Last Updated: 3 days ago)
    NO
    Tin/Silver/Copper (Sn/Ag/Cu)
    260
    40
    3
    Not Qualified
    -
    -
    -
    -
    -
    -
  • BC640,112
    -
    -
    -
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    -
    -
    SILICON
    150°C TJ
    Bulk
    2004
    e3
    -
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Other Transistors
    -
    -
    BOTTOM
    -
    -
    BC640
    1
    -
    -
    -
    -
    SWITCHING
    -
    PNP
    PNP
    -
    -
    63 @ 150mA 2V
    100nA ICBO
    500mV @ 50mA, 500mA
    -
    145MHz
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    830mW
    80V
    1A
    145MHz
    -
    NO
    TIN
    250
    40
    3
    Not Qualified
    8541.21.00.75
    unknown
    O-PBCY-T3
    SINGLE
    0.83W
    0.5 V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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