Fairchild/ON Semiconductor BC640BU
- Part Number:
- BC640BU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3585324-BC640BU
- Description:
- TRANS PNP 80V 1A TO-92
- Datasheet:
- BC640
Fairchild/ON Semiconductor BC640BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC640BU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeno
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max1W
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)1A
- Transition Frequency100MHz
- Frequency - Transition100MHz
- RoHS StatusROHS3 Compliant
BC640BU Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A transition frequency of 100MHz is present in the part.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
BC640BU Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BC640BU Applications
There are a lot of Rochester Electronics, LLC
BC640BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 50mA, 500mA.A transition frequency of 100MHz is present in the part.A 80V maximal voltage - Collector Emitter Breakdown is present in the device.
BC640BU Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
a transition frequency of 100MHz
BC640BU Applications
There are a lot of Rochester Electronics, LLC
BC640BU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC640BU More Descriptions
Bulk Through Hole PNP Single Bipolar (BJT) Transistor 40 @ 150mA 2V 1A 1W 100MHz
Bipolar Transistors - BJT TO-92 PNP GP AMP
Trans GP BJT PNP 80V 1A 3-Pin TO-92 Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistors - BJT TO-92 PNP GP AMP
Trans GP BJT PNP 80V 1A 3-Pin TO-92 Bulk
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
The three parts on the right have similar specifications to BC640BU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusSupplier Device PackageLifecycle StatusNumber of PinsPublishedECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinLead FreeAdditional FeatureView Compare
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BC640BUThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulke3noObsolete1 (Unlimited)3MATTE TINBOTTOMNOT APPLICABLENOT APPLICABLE3O-PBCY-T3COMMERCIAL1SINGLE1WSWITCHINGPNPPNP40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V1A100MHz100MHzROHS3 Compliant------------------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA)---55°C~150°C TJBulk--Obsolete1 (Unlimited)----------625mW--PNP100 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V500mA-150MHzROHS3 CompliantTO-92-3----------------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON-55°C~150°C TJBulke1yesObsolete1 (Unlimited)3Tin/Silver/Copper (Sn/Ag/Cu)BOTTOM260403-Not Qualified1---PNPPNP40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA--150MHz-RoHS Compliant-OBSOLETE (Last Updated: 3 days ago)32005EAR99Other Transistors-80V625mW-500mA150MHzBC640Single625mW150MHz500mV500mA80V-500mV-80V5V25Lead Free-
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)e0yesObsolete1 (Unlimited)3TIN LEADBOTTOM240303O-PBCY-T3COMMERCIAL1SINGLE625mW-PNPPNP40 @ 150mA 2V100nA ICBO500mV @ 50mA, 500mA80V500mA150MHz150MHzNon-RoHS Compliant----------------------EUROPEAN PART NUMBER
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