NXP USA Inc. BC557C,112
- Part Number:
- BC557C,112
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 2846725-BC557C,112
- Description:
- TRANS PNP 45V 0.1A TO-92
- Datasheet:
- BC556, BC557
NXP USA Inc. BC557C,112 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC557C,112.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- Published2007
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)250
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC557
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic650mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)45V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)0.5W
- VCEsat-Max0.65 V
- RoHS StatusROHS3 Compliant
BC557C,112 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC557C,112 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC557C,112 Applications
There are a lot of NXP USA Inc.
BC557C,112 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 420 @ 2mA 5V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 5mA, 100mA.A transition frequency of 100MHz is present in the part.A 45V maximal voltage - Collector Emitter Breakdown is present in the device.
BC557C,112 Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 100MHz
BC557C,112 Applications
There are a lot of NXP USA Inc.
BC557C,112 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC557C,112 More Descriptions
100 Ma 45 V PNP Si Small Signal Transistor TO-92
TRANS PNP 45V 0.1A TO-92
PNP GENERAL PURPOSE TRANSISTO
TRANS PNP 45V 0.1A TO-92
PNP GENERAL PURPOSE TRANSISTO
The three parts on the right have similar specifications to BC557C,112.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxRoHS StatusMountNumber of PinsAdditional FeatureVoltage - Rated DCMax Power DissipationReach Compliance CodeCurrent RatingFrequencyElement ConfigurationPower DissipationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinLead FreeLifecycle StatusFactory Lead TimeContact PlatingWeightPbfree CodeMax Breakdown VoltageHeightLengthWidthTerminal FormCase ConnectionREACH SVHCRadiation HardeningView Compare
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BC557C,112Through HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulk2007e3Obsolete1 (Unlimited)3EAR99Tin (Sn)8541.21.00.95Other TransistorsBOTTOM25040BC5573O-PBCY-T3Not Qualified1SINGLE500mWSWITCHINGPNPPNP420 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA45V100mA100MHz100MHz0.5W0.65 VROHS3 Compliant---------------------------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON-55°C~150°C TJTape & Box (TB)2002e0Obsolete1 (Unlimited)3EAR99Tin/Lead (Sn/Pb)-Other TransistorsBOTTOM23530BC5563-Not Qualified1--AMPLIFIERPNPPNP180 @ 2mA 5V100nA650mV @ 5mA, 100mA--280MHz---Non-RoHS CompliantThrough Hole3EUROPEAN PART NUMBER-65V625mWnot_compliant-100mA280MHzSingle625mW280MHz650mV100mA65V-300mV-80V5V180Contains Lead-------------
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Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON150°C TJTape & Reel (TR)2007e3Active1 (Unlimited)3EAR99--Other TransistorsBOTTOMNOT SPECIFIEDNOT SPECIFIEDBC556--Not Qualified1--SWITCHINGPNPPNP200 @ 2mA 5V15nA ICBO650mV @ 5mA, 100mA--150MHz---ROHS3 CompliantThrough Hole3--65V500mW--100mA150MHzSingle500mW150MHz65V100mA65V-250mV-80V-5V110Lead FreeACTIVE (Last Updated: 4 days ago)2 WeeksTin240mgyes65V5.33mm5.2mm4.19mm----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)-SILICON150°C TJTape & Box (TB)2002e3Active1 (Unlimited)3EAR99--Other TransistorsBOTTOM--BC550---1--SWITCHINGNPNNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA--300MHz---ROHS3 CompliantThrough Hole3-45V500mW-100mA300MHzSingle500mW300MHz45V100mA45V250mV50V5V110Lead Free-7 WeeksTin240mgyes45V4.58mm4.58mm3.86mmWIREISOLATEDNo SVHCNo
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