Fairchild/ON Semiconductor BC556TFR

Name: BC556TFR
Brand: Fairchild/ON Semiconductor
SKU: 3813565-BC556TFR
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC556TFR

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3813565-BC556TFR

Description:: TRANS PNP 65V 0.1A TO-92

ECAD Model:

Datasheet:: BC556TFR

Specifications

Fairchild/ON Semiconductor BC556TFR technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC556TFR.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC556
Power - Max
500mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
150MHz

Description

BC556TFR Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 110 @ 2mA 5V.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 65V maximal voltage - Collector Emitter Breakdown.

BC556TFR Features
the DC current gain for this device is 110 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA

BC556TFR Applications
There are a lot of ON Semiconductor
BC556TFR applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Product Comparison

The three parts on the right have similar specifications to BC556TFR.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Power - Max

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Surface Mount

Transistor Element Material

Published

JESD-609 Code

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

HTS Code

Subcategory

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Transistor Application

Polarity/Channel Type

Transition Frequency

Power Dissipation-Max (Abs)

VCEsat-Max

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Number of Pins

Weight

Pbfree Code

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

Lead Free

Terminal Form

Case Connection

REACH SVHC

Radiation Hardening

View Compare
BC556TFR

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

BC556

500mW

PNP

110 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

65V

100mA

150MHz

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC550C,112

NXP USA Inc.

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

150°C TJ

Bulk

Obsolete

1 (Unlimited)

BC550

500mW

NPN

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

45V

100mA

100MHz

NO

SILICON

2009

e3

3

EAR99

Matte Tin (Sn)

LOW NOISE

8541.21.00.95

Other Transistors

BOTTOM

250

unknown

40

3

O-PBCY-T3

Not Qualified

1

SINGLE

AMPLIFIER

NPN

100MHz

0.625W

0.6 V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC556TFR vs BC550C,112
BC556BTFR

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

150°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

BC556

-

PNP

200 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

-

-

-

-

SILICON

2007

e3

3

EAR99

-

-

-

Other Transistors

BOTTOM

NOT SPECIFIED

-

NOT SPECIFIED

-

-

Not Qualified

1

-

SWITCHING

PNP

150MHz

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

Through Hole

3

240mg

yes

-65V

500mW

-100mA

150MHz

Single

500mW

150MHz

65V

100mA

65V

-250mV

65V

-80V

-5V

110

5.33mm

5.2mm

4.19mm

Lead Free

-

-

-

-

BC556TFR vs BC556BTFR
BC550CTA

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

150°C TJ

Tape & Box (TB)

Active

1 (Unlimited)

BC550

-

NPN

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

-

-

-

SILICON

2002

e3

3

EAR99

-

-

-

Other Transistors

BOTTOM

-

-

-

-

-

-

1

-

SWITCHING

NPN

300MHz

-

-

ROHS3 Compliant

-

7 Weeks

Tin

Through Hole

3

240mg

yes

45V

500mW

100mA

300MHz

Single

500mW

300MHz

45V

100mA

45V

250mV

45V

50V

5V

110

4.58mm

4.58mm

3.86mm

Lead Free

WIRE

ISOLATED

No SVHC

No

BC556TFR vs BC550CTA