ON Semiconductor BC557BZL1G

Name: BC557BZL1G
Brand: ON Semiconductor
SKU: 2469289-BC557BZL1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC557BZL1G

Manufacturer:: ON Semiconductor

Ventron No:: 2469289-BC557BZL1G

Description:: TRANS PNP 45V 0.1A TO-92

ECAD Model:

Datasheet:: BC557BZL1G

Specifications

ON Semiconductor BC557BZL1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC557BZL1G.

Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN SILVER COPPER
Additional Feature
EUROPEAN PART NUMBER
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Power - Max
625mW
Transistor Application
AMPLIFIER
Polarity/Channel Type
PNP
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 2mA 5V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
100mA
Transition Frequency
320MHz
Frequency - Transition
320MHz
RoHS Status
ROHS3 Compliant

Description

BC557BZL1G Overview
In this device, the DC current gain is 180 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 650mV @ 5mA, 100mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 320MHz.There is a 45V maximal voltage in the device due to collector-emitter breakdown.

BC557BZL1G Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
a transition frequency of 320MHz

BC557BZL1G Applications
There are a lot of Rochester Electronics, LLC
BC557BZL1G applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC557BZL1G More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Tape & Box (TB) Through Hole PNP Single Bipolar (BJT) Transistor 180 @ 2mA 5V 100nA 625mW 320MHz
Trans GP BJT PNP 45V 0.1A 625mW 3-Pin TO-92 Fan-Fold
TRANSISTOR, PNP, 45V, 0.1A, TO-92; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 45V; Transition Frequency ft: 320MHz; Power Dissipation Pd: 625mW; DC Collector Current: 100mA; DC Current Gain hFE: 290hFE; Tran

Product Comparison

The three parts on the right have similar specifications to BC557BZL1G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Additional Feature

Terminal Position

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Transition Frequency

Frequency - Transition

RoHS Status

Mount

Number of Pins

Published

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Current Rating

Frequency

Base Part Number

Element Configuration

Power Dissipation

Gain Bandwidth Product

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Lead Free

HTS Code

Power Dissipation-Max (Abs)

VCEsat-Max

Factory Lead Time

Contact Plating

Weight

Terminal Form

Case Connection

Max Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

View Compare
BC557BZL1G

ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

NO

SILICON

-55°C~150°C TJ

Tape & Box (TB)

e1

yes

Obsolete

1 (Unlimited)

3

TIN SILVER COPPER

EUROPEAN PART NUMBER

BOTTOM

260

unknown

40

3

O-PBCY-T3

COMMERCIAL

1

SINGLE

625mW

AMPLIFIER

PNP

PNP

180 @ 2mA 5V

100nA

650mV @ 5mA, 100mA

45V

100mA

320MHz

320MHz

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC556BZL1

ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

SILICON

-55°C~150°C TJ

Tape & Box (TB)

e0

-

Obsolete

1 (Unlimited)

3

Tin/Lead (Sn/Pb)

EUROPEAN PART NUMBER

BOTTOM

235

not_compliant

30

3

-

Not Qualified

1

-

-

AMPLIFIER

PNP

PNP

180 @ 2mA 5V

100nA

650mV @ 5mA, 100mA

-

-

280MHz

-

Non-RoHS Compliant

Through Hole

3

2002

EAR99

Other Transistors

-65V

625mW

-100mA

280MHz

BC556

Single

625mW

280MHz

650mV

100mA

65V

-300mV

-80V

5V

180

Contains Lead

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC557BZL1G vs BC556BZL1
BC550C,112

NXP USA Inc.

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

NO

SILICON

150°C TJ

Bulk

e3

-

Obsolete

1 (Unlimited)

3

Matte Tin (Sn)

LOW NOISE

BOTTOM

250

unknown

40

3

O-PBCY-T3

Not Qualified

1

SINGLE

500mW

AMPLIFIER

NPN

NPN

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

45V

100mA

100MHz

100MHz

ROHS3 Compliant

-

-

2009

EAR99

Other Transistors

-

-

-

-

BC550

-

-

-

-

-

-

-

-

-

-

-

8541.21.00.95

0.625W

0.6 V

-

-

-

-

-

-

-

-

-

-

-

BC557BZL1G vs BC550C,112
BC550CTA

Fairchild/ON Semiconductor

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

-

SILICON

150°C TJ

Tape & Box (TB)

e3

yes

Active

1 (Unlimited)

3

-

-

BOTTOM

-

-

-

-

-

-

1

-

-

SWITCHING

NPN

NPN

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

-

300MHz

-

ROHS3 Compliant

Through Hole

3

2002

EAR99

Other Transistors

45V

500mW

100mA

300MHz

BC550

Single

500mW

300MHz

45V

100mA

45V

250mV

50V

5V

110

Lead Free

-

-

-

7 Weeks

Tin

240mg

WIRE

ISOLATED

45V

4.58mm

4.58mm

3.86mm

No SVHC

No

BC557BZL1G vs BC550CTA