BC557B

ON Semiconductor BC557B

Part Number:
BC557B
Manufacturer:
ON Semiconductor
Ventron No:
2468193-BC557B
Description:
TRANS PNP 45V 0.1A TO-92
ECAD Model:
Datasheet:
BC556, 557, 558

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Comments
Specifications
ON Semiconductor BC557B technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor BC557B.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-226-3, TO-92-3 (TO-226AA)
  • Surface Mount
    NO
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Bulk
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Terminal Finish
    TIN SILVER COPPER
  • Voltage - Rated DC
    -45V
  • Terminal Position
    BOTTOM
  • Peak Reflow Temperature (Cel)
    NOT APPLICABLE
  • Current Rating
    -100mA
  • Time@Peak Reflow Temperature-Max (s)
    NOT APPLICABLE
  • Pin Count
    3
  • Qualification Status
    COMMERCIAL
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    500mW
  • Power - Max
    625mW
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 2mA 5V
  • Current - Collector Cutoff (Max)
    100nA
  • Vce Saturation (Max) @ Ib, Ic
    650mV @ 5mA, 100mA
  • Collector Emitter Breakdown Voltage
    45V
  • Current - Collector (Ic) (Max)
    100mA
  • Transition Frequency
    150MHz
  • Frequency - Transition
    320MHz
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
BC557B Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 180 @ 2mA 5V.When VCE saturation is 650mV @ 5mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -100mA.In the part, the transition frequency is 150MHz.

BC557B Features
the DC current gain for this device is 180 @ 2mA 5V
the vce saturation(Max) is 650mV @ 5mA, 100mA
the current rating of this device is -100mA
a transition frequency of 150MHz


BC557B Applications
There are a lot of Rochester Electronics, LLC
BC557B applications of single BJT transistors.


Inverter
Interface
Driver
Muting
BC557B More Descriptions
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Trans GP BJT PNP 45V 0.1A 500mW Automotive 3-Pin TO-92 Ammo
BJT, TO-92, 45V, 100mA, PNP, 150°C
BC557B Diotec Bipolar PNP Transistor -45V
Product Comparison
The three parts on the right have similar specifications to BC557B.
  • Image
    Part Number
    Manufacturer
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Voltage - Rated DC
    Terminal Position
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Current - Collector (Ic) (Max)
    Transition Frequency
    Frequency - Transition
    RoHS Status
    Lead Free
    Mount
    Published
    ECCN Code
    Additional Feature
    Subcategory
    Max Power Dissipation
    Reach Compliance Code
    Frequency
    Base Part Number
    Element Configuration
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Saturation Voltage
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Weight
    Max Breakdown Voltage
    Height
    Length
    Width
    Terminal Form
    Case Connection
    REACH SVHC
    Radiation Hardening
    View Compare
  • BC557B
    BC557B
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA)
    NO
    3
    SILICON
    -55°C~150°C TJ
    Bulk
    e1
    yes
    Obsolete
    1 (Unlimited)
    3
    TIN SILVER COPPER
    -45V
    BOTTOM
    NOT APPLICABLE
    -100mA
    NOT APPLICABLE
    3
    COMMERCIAL
    1
    SINGLE
    500mW
    625mW
    SWITCHING
    PNP
    PNP
    180 @ 2mA 5V
    100nA
    650mV @ 5mA, 100mA
    45V
    100mA
    150MHz
    320MHz
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BZL1
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    3
    SILICON
    -55°C~150°C TJ
    Tape & Box (TB)
    e0
    -
    Obsolete
    1 (Unlimited)
    3
    Tin/Lead (Sn/Pb)
    -65V
    BOTTOM
    235
    -100mA
    30
    3
    Not Qualified
    1
    -
    625mW
    -
    AMPLIFIER
    PNP
    PNP
    180 @ 2mA 5V
    100nA
    650mV @ 5mA, 100mA
    65V
    -
    280MHz
    -
    Non-RoHS Compliant
    Contains Lead
    Through Hole
    2002
    EAR99
    EUROPEAN PART NUMBER
    Other Transistors
    625mW
    not_compliant
    280MHz
    BC556
    Single
    280MHz
    650mV
    100mA
    -300mV
    -80V
    5V
    180
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • BC556BTFR
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    -65V
    BOTTOM
    NOT SPECIFIED
    -100mA
    NOT SPECIFIED
    -
    Not Qualified
    1
    -
    500mW
    -
    SWITCHING
    PNP
    PNP
    200 @ 2mA 5V
    15nA ICBO
    650mV @ 5mA, 100mA
    65V
    -
    150MHz
    -
    ROHS3 Compliant
    Lead Free
    Through Hole
    2007
    EAR99
    -
    Other Transistors
    500mW
    -
    150MHz
    BC556
    Single
    150MHz
    65V
    100mA
    -250mV
    -80V
    -5V
    110
    ACTIVE (Last Updated: 4 days ago)
    2 Weeks
    Tin
    240mg
    65V
    5.33mm
    5.2mm
    4.19mm
    -
    -
    -
    -
  • BC550CTA
    Through Hole
    TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
    -
    3
    SILICON
    150°C TJ
    Tape & Box (TB)
    e3
    yes
    Active
    1 (Unlimited)
    3
    -
    45V
    BOTTOM
    -
    100mA
    -
    -
    -
    1
    -
    500mW
    -
    SWITCHING
    NPN
    NPN
    420 @ 2mA 5V
    15nA ICBO
    600mV @ 5mA, 100mA
    45V
    -
    300MHz
    -
    ROHS3 Compliant
    Lead Free
    Through Hole
    2002
    EAR99
    -
    Other Transistors
    500mW
    -
    300MHz
    BC550
    Single
    300MHz
    45V
    100mA
    250mV
    50V
    5V
    110
    -
    7 Weeks
    Tin
    240mg
    45V
    4.58mm
    4.58mm
    3.86mm
    WIRE
    ISOLATED
    No SVHC
    No
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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