Fairchild/ON Semiconductor BC556ATA

Name: BC556ATA
Brand: Fairchild/ON Semiconductor
SKU: 3553758-BC556ATA
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: BC556ATA

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3553758-BC556ATA

Description:: TRANS PNP 65V 0.1A TO-92

ECAD Model:

Datasheet:: BC556ATA

Specifications

Fairchild/ON Semiconductor BC556ATA technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC556ATA.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Number of Pins
3
Weight
240mg
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Box (TB)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-65V
Max Power Dissipation
500mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
-100mA
Frequency
150MHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
BC556
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
65V
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
110 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage
65V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
-250mV
Max Breakdown Voltage
65V
Collector Base Voltage (VCBO)
-80V
Emitter Base Voltage (VEBO)
-5V
hFE Min
110
Height
5.33mm
Length
5.2mm
Width
4.19mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

BC556ATA Overview
In this device, the DC current gain is 110 @ 2mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -250mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at -5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-100mA).150MHz is present in the transition frequency.An input voltage of 65V volts is the breakdown voltage.Maximum collector currents can be below 100mA volts.

BC556ATA Features
the DC current gain for this device is 110 @ 2mA 5V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at -5V
the current rating of this device is -100mA
a transition frequency of 150MHz

BC556ATA Applications
There are a lot of ON Semiconductor
BC556ATA applications of single BJT transistors.

Inverter
Interface
Driver
Muting

BC556ATA More Descriptions

Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Transistor,bjt,pnp,65V V(Br)Ceo,100Ma I(C),to-92 Rohs Compliant: Yes |Onsemi BC556ATA
PNP 65 V 100 mA 500 mW Through Hole Epitaxial Silicon Transistor - TO-92
Trans GP BJT PNP 65V 0.1A 3-Pin TO-92 Ammo - Ammo Pack
Bipolar Transistors - BJT PNP -65V -100mA HFE/220
65V 500mW 100mA 110@2mA5V 150MHz 250mV@100mA5mA PNP 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS

Product Comparison

The three parts on the right have similar specifications to BC556ATA.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Voltage - Rated DC

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Current Rating

Frequency

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Qualification Status

Number of Elements

Element Configuration

Power Dissipation

Transistor Application

Gain Bandwidth Product

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Transition Frequency

Collector Emitter Saturation Voltage

Max Breakdown Voltage

Collector Base Voltage (VCBO)

Emitter Base Voltage (VEBO)

hFE Min

Height

Length

Width

RoHS Status

Lead Free

Terminal Finish

Additional Feature

Reach Compliance Code

Pin Count

Surface Mount

HTS Code

JESD-30 Code

Configuration

Power - Max

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Frequency - Transition

Power Dissipation-Max (Abs)

VCEsat-Max

View Compare
BC556ATA

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240mg

SILICON

150°C TJ

Tape & Box (TB)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-65V

500mW

BOTTOM

NOT SPECIFIED

-100mA

150MHz

NOT SPECIFIED

BC556

Not Qualified

1

Single

500mW

SWITCHING

150MHz

PNP

PNP

65V

100mA

110 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

65V

150MHz

-250mV

65V

-80V

-5V

110

5.33mm

5.2mm

4.19mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
BC556BZL1

ON Semiconductor

-

-

-

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

-

SILICON

-55°C~150°C TJ

Tape & Box (TB)

2002

e0

-

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-65V

625mW

BOTTOM

235

-100mA

280MHz

30

BC556

Not Qualified

1

Single

625mW

AMPLIFIER

280MHz

PNP

PNP

650mV

100mA

180 @ 2mA 5V

100nA

650mV @ 5mA, 100mA

65V

280MHz

-300mV

-

-80V

5V

180

-

-

-

Non-RoHS Compliant

Contains Lead

Tin/Lead (Sn/Pb)

EUROPEAN PART NUMBER

not_compliant

3

-

-

-

-

-

-

-

-

-

-

BC556ATA vs BC556BZL1
BC550C,112

NXP USA Inc.

-

-

-

-

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

-

-

SILICON

150°C TJ

Bulk

2009

e3

-

Obsolete

1 (Unlimited)

3

EAR99

Other Transistors

-

-

BOTTOM

250

-

-

40

BC550

Not Qualified

1

-

-

AMPLIFIER

-

NPN

NPN

-

-

420 @ 2mA 5V

15nA ICBO

600mV @ 5mA, 100mA

-

100MHz

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

Matte Tin (Sn)

LOW NOISE

unknown

3

NO

8541.21.00.95

O-PBCY-T3

SINGLE

500mW

45V

100mA

100MHz

0.625W

0.6 V

BC556ATA vs BC550C,112
BC556BTFR

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

Through Hole

Through Hole

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

3

240mg

SILICON

150°C TJ

Tape & Reel (TR)

2007

e3

yes

Active

1 (Unlimited)

3

EAR99

Other Transistors

-65V

500mW

BOTTOM

NOT SPECIFIED

-100mA

150MHz

NOT SPECIFIED

BC556

Not Qualified

1

Single

500mW

SWITCHING

150MHz

PNP

PNP

65V

100mA

200 @ 2mA 5V

15nA ICBO

650mV @ 5mA, 100mA

65V

150MHz

-250mV

65V

-80V

-5V

110

5.33mm

5.2mm

4.19mm

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

BC556ATA vs BC556BTFR