Fairchild/ON Semiconductor BC549C
- Part Number:
- BC549C
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2467312-BC549C
- Description:
- TRANS NPN 30V 0.1A TO-92
- Datasheet:
- BC546-50 Datasheet
Fairchild/ON Semiconductor BC549C technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC549C.
- Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
- Contact PlatingCopper, Silver, Tin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Number of Pins3
- Supplier Device PackageTO-92-3
- Weight200mg
- Operating Temperature-55°C~150°C TJ
- PackagingBulk
- Published2007
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Voltage - Rated DC30V
- Max Power Dissipation625mW
- Current Rating100mA
- Frequency300MHz
- Base Part NumberBC549
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation500mW
- Power - Max625mW
- Gain Bandwidth Product250MHz
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)30V
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Collector Emitter Breakdown Voltage30V
- Voltage - Collector Emitter Breakdown (Max)30V
- Current - Collector (Ic) (Max)100mA
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage30V
- Frequency - Transition250MHz
- Collector Base Voltage (VCBO)30V
- Emitter Base Voltage (VEBO)5V
- hFE Min110
- REACH SVHCNo SVHC
- RoHS StatusNon-RoHS Compliant
- Lead FreeLead Free
BC549C Description
BC549C is a type of NPN epitaxial silicon bipolar transistor manufactured by ON Semiconductor for amplifier and switching applications. It is available in the ultrasmall TO-92 package allowing miniaturization in end products. BC549C transistor is able to provide a large current capacity (IC=0.7A) and low-saturation voltage.
BC549C Features
Low noise
Ultrasmall package allows miniaturization in end products
Large current capacity (IC=0.7A)
Low-saturation voltage
Available in the TO-92 package
BC549C Applications
Amplifier applications
Switching applications
BC549C is a type of NPN epitaxial silicon bipolar transistor manufactured by ON Semiconductor for amplifier and switching applications. It is available in the ultrasmall TO-92 package allowing miniaturization in end products. BC549C transistor is able to provide a large current capacity (IC=0.7A) and low-saturation voltage.
BC549C Features
Low noise
Ultrasmall package allows miniaturization in end products
Large current capacity (IC=0.7A)
Low-saturation voltage
Available in the TO-92 package
BC549C Applications
Amplifier applications
Switching applications
BC549C More Descriptions
Bipolar (Bjt) Single Transistor, Npn, 30 V, 250 Mhz, 625 Mw, 100 Ma, 500 Rohs Compliant: Yes |Multicomp Pro BC549C
Transistor, NPN, 30V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:250MHz; Power Dissipation
TRANSISTOR, NPN, 30V, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 625mW; DC Collector Current: 100mA; DC Current Gain hFE: 500hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 2mA; Device Marking: BC549C; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 300Hz; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 420; No. of Transistors: 1; Noise Factor Max: 1.4dB; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: f; Power Dissipation Ptot Max: 500mW; Termination Type: Through Hole; Voltage Vcbo: 30V
Transistor, NPN, 30V, TO-92; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:250MHz; Power Dissipation
TRANSISTOR, NPN, 30V, TO-92; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 250MHz; Power Dissipation Pd: 625mW; DC Collector Current: 100mA; DC Current Gain hFE: 500hFE; Transistor Case Style: TO-92; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 600mV; Continuous Collector Current Ic Max: 100mA; Current Ic Continuous a Max: 100mA; Current Ic hFE: 2mA; Device Marking: BC549C; Full Power Rating Temperature: 25°C; Gain Bandwidth ft Min: 300Hz; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 420; No. of Transistors: 1; Noise Factor Max: 1.4dB; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C; Pin Configuration: f; Power Dissipation Ptot Max: 500mW; Termination Type: Through Hole; Voltage Vcbo: 30V
The three parts on the right have similar specifications to BC549C.
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ImagePart NumberManufacturerLifecycle StatusContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureVoltage - Rated DCMax Power DissipationCurrent RatingFrequencyBase Part NumberNumber of ElementsPolarityElement ConfigurationPower DissipationPower - MaxGain Bandwidth ProductTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Emitter Saturation VoltageMax Breakdown VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinREACH SVHCRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyHTS CodeSubcategoryReach Compliance CodePower Dissipation-Max (Abs)VCEsat-MaxSource Url Status Check DateView Compare
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BC549COBSOLETE (Last Updated: 3 days ago)Copper, Silver, TinThrough HoleThrough HoleTO-226-3, TO-92-3 (TO-226AA)3TO-92-3200mg-55°C~150°C TJBulk2007Obsolete1 (Unlimited)150°C-55°C30V625mW100mA300MHzBC5491NPNSingle500mW625mW250MHzNPN30V100mA200 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA30V30V100mA250mV30V250MHz30V5V110No SVHCNon-RoHS CompliantLead Free------------------------
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)----55°C~150°C TJTape & Box (TB)2006Obsolete1 (Unlimited)------BC54*1---625mW-NPN--110 @ 2mA 5V-300mV @ 5mA, 100mA-45V100mA--300MHz----RoHS Compliant-NOSILICONe3yes3EAR99Matte Tin (Sn)BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not QualifiedSINGLEAMPLIFIERNPN300MHz------
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA)---150°C TJBulk-Obsolete1 (Unlimited)------BC547----500mW-NPN--110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA-45V100mA--300MHz-----------------------------
-
---Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)---150°C TJTape & Box (TB)1999Obsolete1 (Unlimited)------BC5461---500mW-NPN--200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA-65V100mA--100MHz----ROHS3 Compliant-NOSILICONe3-3EAR99Matte Tin (Sn)BOTTOM250403O-PBCY-T3Not QualifiedSINGLESWITCHINGNPN100MHz8541.21.00.95Other Transistorsunknown0.625W0.6 V2013-06-14 00:00:00
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