NXP USA Inc. BC546B,126
- Part Number:
- BC546B,126
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3585470-BC546B,126
- Description:
- TRANS NPN 65V 0.1A TO-92
- Datasheet:
- BC846 Series
NXP USA Inc. BC546B,126 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. BC546B,126.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Box (TB)
- Published1999
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- HTS Code8541.21.00.95
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)250
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)40
- Base Part NumberBC546
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)65V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency100MHz
- Frequency - Transition100MHz
- Power Dissipation-Max (Abs)0.625W
- VCEsat-Max0.6 V
- Source Url Status Check Date2013-06-14 00:00:00
- RoHS StatusROHS3 Compliant
BC546B,126 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Parts of this part have transition frequencies of 100MHz.This device displays a 65V maximum voltage - Collector Emitter Breakdown.
BC546B,126 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC546B,126 Applications
There are a lot of NXP USA Inc.
BC546B,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 200 @ 2mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 100mA.Parts of this part have transition frequencies of 100MHz.This device displays a 65V maximum voltage - Collector Emitter Breakdown.
BC546B,126 Features
the DC current gain for this device is 200 @ 2mA 5V
the vce saturation(Max) is 400mV @ 5mA, 100mA
a transition frequency of 100MHz
BC546B,126 Applications
There are a lot of NXP USA Inc.
BC546B,126 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC546B,126 More Descriptions
Audio Amp Headphone/Speaker 2-CH Stereo 1.4W Class-AB 14-Pin(13 Tab) HSSOP
TRANS NPN 65V 0.1A TO-92
NPN GENERAL PURPOSE TRANSISTO
TRANS NPN 65V 0.1A TO-92
NPN GENERAL PURPOSE TRANSISTO
The three parts on the right have similar specifications to BC546B,126.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishHTS CodeSubcategoryTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)VCEsat-MaxSource Url Status Check DateRoHS StatusPbfree CodeView Compare
-
BC546B,126Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)1999e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)8541.21.00.95Other TransistorsBOTTOM250unknown40BC5463O-PBCY-T3Not Qualified1SINGLE500mWSWITCHINGNPNNPN200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA65V100mA100MHz100MHz0.625W0.6 V2013-06-14 00:00:00ROHS3 Compliant--
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)--150°C TJTape & Box (TB)--Obsolete1 (Unlimited)---------BC546-----500mW--NPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA65V100mA-300MHz-----
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)2006e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)--BOTTOMNOT SPECIFIED-NOT SPECIFIEDBC54*3O-PBCY-T3Not Qualified1SINGLE625mWAMPLIFIERNPNNPN110 @ 2mA 5V-300mV @ 5mA, 100mA45V100mA300MHz300MHz---RoHS Compliantyes
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)--150°C TJBulk--Obsolete1 (Unlimited)---------BC547-----500mW--NPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA-300MHz-----
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