Fairchild/ON Semiconductor BC546CBU
- Part Number:
- BC546CBU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3813509-BC546CBU
- Description:
- TRANS NPN 65V 0.1A TO-92
- Datasheet:
- BC546-50 Datasheet
Fairchild/ON Semiconductor BC546CBU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor BC546CBU.
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA)
- Surface MountNO
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingBulk
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Terminal FinishMATTE TIN
- Additional FeatureLOW NOISE
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)NOT APPLICABLE
- Time@Peak Reflow Temperature-Max (s)NOT APPLICABLE
- Pin Count3
- JESD-30 CodeO-PBCY-T3
- Qualification StatusCOMMERCIAL
- Number of Elements1
- ConfigurationSINGLE
- Power - Max500mW
- Transistor ApplicationSWITCHING
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- DC Current Gain (hFE) (Min) @ Ic, Vce420 @ 2mA 5V
- Current - Collector Cutoff (Max)15nA ICBO
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
- Voltage - Collector Emitter Breakdown (Max)65V
- Current - Collector (Ic) (Max)100mA
- Transition Frequency300MHz
- Frequency - Transition300MHz
- RoHS StatusROHS3 Compliant
BC546CBU Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The part has a transition frequency of 300MHz.Device displays Collector Emitter Breakdown (65V maximal voltage).
BC546CBU Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 300MHz
BC546CBU Applications
There are a lot of Rochester Electronics, LLC
BC546CBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 420 @ 2mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 600mV @ 5mA, 100mA.The part has a transition frequency of 300MHz.Device displays Collector Emitter Breakdown (65V maximal voltage).
BC546CBU Features
the DC current gain for this device is 420 @ 2mA 5V
the vce saturation(Max) is 600mV @ 5mA, 100mA
a transition frequency of 300MHz
BC546CBU Applications
There are a lot of Rochester Electronics, LLC
BC546CBU applications of single BJT transistors.
Inverter
Interface
Driver
Muting
BC546CBU More Descriptions
Trans GP BJT NPN 65V 0.1A 3-Pin TO-92 Bulk
Bipolar Transistors - BJT NPN 65V 100mA HFE/800
TRANS NPN 65V 100MA TO92-3
MOSFET N-CH 80V 5DFN
Bipolar Transistors - BJT NPN 65V 100mA HFE/800
TRANS NPN 65V 100MA TO92-3
MOSFET N-CH 80V 5DFN
The three parts on the right have similar specifications to BC546CBU.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTerminal FinishAdditional FeatureTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower - MaxTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Transition FrequencyFrequency - TransitionRoHS StatusPublishedECCN CodeBase Part NumberHTS CodeSubcategoryReach Compliance CodePower Dissipation-Max (Abs)VCEsat-MaxSource Url Status Check DateView Compare
-
BC546CBUThrough HoleTO-226-3, TO-92-3 (TO-226AA)NOSILICON150°C TJBulke3yesObsolete1 (Unlimited)3MATTE TINLOW NOISEBOTTOMNOT APPLICABLENOT APPLICABLE3O-PBCY-T3COMMERCIAL1SINGLE500mWSWITCHINGNPNNPN420 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA65V100mA300MHz300MHzROHS3 Compliant----------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON-55°C~150°C TJTape & Box (TB)e3yesObsolete1 (Unlimited)3Matte Tin (Sn)-BOTTOMNOT SPECIFIEDNOT SPECIFIED3O-PBCY-T3Not Qualified1SINGLE625mWAMPLIFIERNPNNPN110 @ 2mA 5V-300mV @ 5mA, 100mA45V100mA300MHz300MHzRoHS Compliant2006EAR99BC54*------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA)--150°C TJBulk--Obsolete1 (Unlimited)-----------500mW--NPN110 @ 2mA 5V15nA ICBO600mV @ 5mA, 100mA45V100mA-300MHz---BC547------
-
Through HoleTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)NOSILICON150°C TJTape & Box (TB)e3-Obsolete1 (Unlimited)3Matte Tin (Sn)-BOTTOM250403O-PBCY-T3Not Qualified1SINGLE500mWSWITCHINGNPNNPN200 @ 2mA 5V15nA ICBO400mV @ 5mA, 100mA65V100mA100MHz100MHzROHS3 Compliant1999EAR99BC5468541.21.00.95Other Transistorsunknown0.625W0.6 V2013-06-14 00:00:00
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