NXP USA Inc. AFT27S006NT1

Name: AFT27S006NT1
Brand: NXP USA Inc.
SKU: 2475081-AFT27S006NT1
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AFT27S006NT1

Manufacturer:: NXP USA Inc.

Ventron No:: 2475081-AFT27S006NT1

Description:: FET RF 65V 2.17GHZ PLD1.5W

ECAD Model:

Datasheet:: AFT27S006NT1

Specifications

NXP USA Inc. AFT27S006NT1 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT27S006NT1.

Factory Lead Time
10 Weeks
Package / Case
PLD-1.5W
Surface Mount
YES
Packaging
Tape & Reel (TR)
Published
2013
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Voltage - Rated
65V
Subcategory
FET General Purpose Power
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
not_compliant
Frequency
2.17GHz
Time@Peak Reflow Temperature-Max (s)
40
JESD-30 Code
R-PDFM-F2
Operating Temperature (Max)
150°C
Operating Temperature (Min)
-40°C
Number of Elements
1
Configuration
Single
Operating Mode
ENHANCEMENT MODE
Current - Test
70mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
22dB
Power - Output
28.8dBm
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
Power Dissipation Ambient-Max
1.5W
RoHS Status
ROHS3 Compliant

Description

AFT27S006NT1 Description AFT27S006NT1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in 50V large signal applications in dc up in the range of 150 to 200 MHz. The special low thermal resistance packaging makes transistor AFT27S006NT1 suitable for ISM applications in which reliability and durability are essential. NXP USA Inc. AFT27S006NT1 has the common source configuration. AFT27S006NT1 Features Gold metalization Excellent thermal stability Common source configuration Thermally enhanced packaging AFT27S006NT1 Applications ISM applications DC large signal applications

AFT27S006NT1 More Descriptions

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 728-3700 MHz, 28.8 dBm Avg., 28 V
RF Power Transistor, 0.10 to 3.6 GHz, 6 W, Typ Gain in dB is 22.5 @ 2170 MHz, 28 V, LDMOS, SOT1811-2
RF FET, 65V, 728MHZ-3700MHZ, PLD-1.5W; Drain Source Voltage Vds: 65V; Continuous Drain Current Id: -; Power Dissipation Pd: -; Operating Frequency Min: 728MHz; Operating Frequency Max: 3700MHz; RF Transistor Case: PLD-1.5W; No

Product Comparison

The three parts on the right have similar specifications to AFT27S006NT1.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Surface Mount

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Voltage - Rated

Subcategory

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Frequency

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Operating Temperature (Max)

Operating Temperature (Min)

Number of Elements

Configuration

Operating Mode

Current - Test

Polarity/Channel Type

Transistor Type

Gain

Power - Output

FET Technology

Voltage - Test

Power Dissipation Ambient-Max

RoHS Status

HTS Code

View Compare
AFT27S006NT1

NXP USA Inc.

10 Weeks

PLD-1.5W

YES

Tape & Reel (TR)

2013

e3

Active

3 (168 Hours)

2

EAR99

Tin (Sn)

65V

FET General Purpose Power

DUAL

FLAT

260

not_compliant

2.17GHz

40

R-PDFM-F2

150°C

-40°C

1

Single

ENHANCEMENT MODE

70mA

N-CHANNEL

LDMOS

22dB

28.8dBm

METAL-OXIDE SEMICONDUCTOR

28V

1.5W

ROHS3 Compliant

-

-
AFT26P100-4WGSR3

NXP USA Inc.

10 Weeks

-

-

Tape & Reel (TR)

2006

-

Not For New Designs

Not Applicable

-

EAR99

-

-

-

-

-

260

-

-

40

-

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

8541.29.00.75

AFT27S006NT1 vs AFT26P100-4WGSR3
AFT23S160W02SR3

NXP USA Inc.

10 Weeks

NI-780S

-

Tape & Reel (TR)

2013

-

Not For New Designs

Not Applicable

-

EAR99

-

65V

FET General Purpose Power

-

-

260

-

2.4GHz

40

-

125°C

-

-

Single

-

1.1A

N-CHANNEL

LDMOS

17.9dB

45W

METAL-OXIDE SEMICONDUCTOR

28V

-

ROHS3 Compliant

8541.29.00.40

AFT27S006NT1 vs AFT23S160W02SR3
AFT21H350W03SR6

NXP USA Inc.

10 Weeks

NI-1230S

-

Tape & Reel (TR)

2006

-

Not For New Designs

Not Applicable

-

EAR99

-

65V

FET General Purpose Power

-

-

260

-

2.11GHz

40

-

125°C

-

-

Single

-

750mA

N-CHANNEL

LDMOS

16.4dB

63W

METAL-OXIDE SEMICONDUCTOR

28V

-

ROHS3 Compliant

8541.29.00.40

AFT27S006NT1 vs AFT21H350W03SR6