NXP USA Inc. AFT26H200W03SR6

Name: AFT26H200W03SR6
Brand: NXP USA Inc.
SKU: 2477445-AFT26H200W03SR6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AFT26H200W03SR6

Manufacturer:: NXP USA Inc.

Ventron No:: 2477445-AFT26H200W03SR6

Description:: FET RF 2CH 65V 2.5GHZ NI1230S-4

ECAD Model:

Datasheet:: AFT26H200W03SR6

Specifications

NXP USA Inc. AFT26H200W03SR6 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT26H200W03SR6.

Factory Lead Time
10 Weeks
Package / Case
NI-1230-4S
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
65V
HTS Code
8541.29.00.40
Subcategory
FET General Purpose Power
Peak Reflow Temperature (Cel)
260
Frequency
2.5GHz
Time@Peak Reflow Temperature-Max (s)
40
Operating Temperature (Max)
225°C
Configuration
Single
Current - Test
500mA
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
14.1dB
Power - Output
45W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

AFT26H200W03SR6 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT26H200W03SR6 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT26H200W03SR6. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

AFT26H200W03SR6 More Descriptions

Airfast RF Power LDMOS Transistor, 2496-2690 MHz, 45 W Avg., 28 V
RF Power Transistor,2496 to 2690 MHz, 200 W, Typ Gain in dB is 14.1 @ 2496 MHz, 28 V, LDMOS, SOT1829
RF MOSFET Transistors Airfast RF Pwr LDMOS Trx, 2.49-.69GHz
Trans RF MOSFET N-CH 65V 5-Pin NI-1230S T/R
FET RF NCH 65V 2690MHZ NI1230S4
FET RF 2CH 65V 2.5GHZ NI1230S-4

Product Comparison

The three parts on the right have similar specifications to AFT26H200W03SR6.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

HTS Code

Subcategory

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Operating Temperature (Max)

Configuration

Current - Test

Polarity/Channel Type

Transistor Type

Gain

Power - Output

FET Technology

Voltage - Test

RoHS Status

View Compare
AFT26H200W03SR6

NXP USA Inc.

10 Weeks

NI-1230-4S

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.5GHz

40

225°C

Single

500mA

N-CHANNEL

LDMOS

14.1dB

45W

METAL-OXIDE SEMICONDUCTOR

28V

ROHS3 Compliant

-
AFT26P100-4WGSR3

NXP USA Inc.

10 Weeks

-

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

-

8541.29.00.75

-

260

-

40

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

AFT26H200W03SR6 vs AFT26P100-4WGSR3
AFT23S160W02SR3

NXP USA Inc.

10 Weeks

NI-780S

Tape & Reel (TR)

2013

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.4GHz

40

125°C

Single

1.1A

N-CHANNEL

LDMOS

17.9dB

45W

METAL-OXIDE SEMICONDUCTOR

28V

ROHS3 Compliant

AFT26H200W03SR6 vs AFT23S160W02SR3
AFT26H250-24SR6

NXP USA Inc.

10 Weeks

NI-1230-4LS2L

Tape & Reel (TR)

2006

Active

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.5GHz

40

225°C

Single

700mA

N-CHANNEL

LDMOS

14.1dB

50W

METAL-OXIDE SEMICONDUCTOR

28V

ROHS3 Compliant

AFT26H200W03SR6 vs AFT26H250-24SR6