NXP USA Inc. AFT23S160W02GSR3

Name: AFT23S160W02GSR3
Brand: NXP USA Inc.
SKU: 2477341-AFT23S160W02GSR3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AFT23S160W02GSR3

Manufacturer:: NXP USA Inc.

Ventron No:: 2477341-AFT23S160W02GSR3

Description:: FET RF 65V 2.4GHZ

ECAD Model:

Datasheet:: AFT23S160W02GSR3

Specifications

NXP USA Inc. AFT23S160W02GSR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT23S160W02GSR3.

Factory Lead Time
10 Weeks
Package / Case
NI-780GS-2L
Packaging
Tape & Reel (TR)
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
65V
HTS Code
8541.29.00.40
Subcategory
FET General Purpose Power
Peak Reflow Temperature (Cel)
260
Frequency
2.4GHz
Time@Peak Reflow Temperature-Max (s)
40
Operating Temperature (Max)
125°C
Configuration
Single
Current - Test
1.1A
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
17.9dB
Power - Output
45W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

AFT23S160W02GSR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT23S160W02GSR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT23S160W02GSR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

AFT23S160W02GSR3 More Descriptions

Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 45 W Avg., 28 V
Trans MOSFET N-CH -0.5V/65V 2-Pin NI-780GS T/R
IC RF TRANSISTOR NI-780S-2 GULL

Product Comparison

The three parts on the right have similar specifications to AFT23S160W02GSR3.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

HTS Code

Subcategory

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Operating Temperature (Max)

Configuration

Current - Test

Polarity/Channel Type

Transistor Type

Gain

Power - Output

FET Technology

Voltage - Test

RoHS Status

View Compare
AFT23S160W02GSR3

NXP USA Inc.

10 Weeks

NI-780GS-2L

Tape & Reel (TR)

2013

Obsolete

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.4GHz

40

125°C

Single

1.1A

N-CHANNEL

LDMOS

17.9dB

45W

METAL-OXIDE SEMICONDUCTOR

28V

ROHS3 Compliant

-
AFT26P100-4WGSR3

NXP USA Inc.

10 Weeks

-

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

-

8541.29.00.75

-

260

-

40

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

AFT23S160W02GSR3 vs AFT26P100-4WGSR3
AFT23S160W02SR3

NXP USA Inc.

10 Weeks

NI-780S

Tape & Reel (TR)

2013

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.4GHz

40

125°C

Single

1.1A

N-CHANNEL

LDMOS

17.9dB

45W

METAL-OXIDE SEMICONDUCTOR

28V

ROHS3 Compliant

AFT23S160W02GSR3 vs AFT23S160W02SR3
AFT21H350W03SR6

NXP USA Inc.

10 Weeks

NI-1230S

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.11GHz

40

125°C

Single

750mA

N-CHANNEL

LDMOS

16.4dB

63W

METAL-OXIDE SEMICONDUCTOR

28V

ROHS3 Compliant

AFT23S160W02GSR3 vs AFT21H350W03SR6