NXP USA Inc. AFT23H160-25SR3

Name: AFT23H160-25SR3
Brand: NXP USA Inc.
SKU: 2477321-AFT23H160-25SR3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AFT23H160-25SR3

Manufacturer:: NXP USA Inc.

Ventron No:: 2477321-AFT23H160-25SR3

Description:: IC TRANS RF LDMOS

ECAD Model:

Datasheet:: AFT23H160-25SR3

Specifications

NXP USA Inc. AFT23H160-25SR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT23H160-25SR3.

Factory Lead Time
10 Weeks
Package / Case
NI-880X-4L4S-8
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
65V
HTS Code
8541.29.00.75
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Frequency
2.3GHz
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Current - Test
450mA
Transistor Type
LDMOS (Dual)
Gain
16.7dB
Power - Output
32W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

AFT23H160-25SR3 Overview
This product is manufactured by NXP USA Inc. and belongs to the category of Transistors - FETs, MOSFETs - RF. The images we provide are for reference only, for detailed product information please see specification sheet AFT23H160-25SR3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of AFT23H160-25SR3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

AFT23H160-25SR3 More Descriptions

RF MOSFET Transistors Airfast RF Power LDMOS Transistor, 2300-2400 MHz, 32 W Avg., 28 V
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Trans MOSFET N-CH -0.5V/65V 8-Pin NI-880XS T/R
IC REG LINEAR 3.3V 100MA TO92-3

Product Comparison

The three parts on the right have similar specifications to AFT23H160-25SR3.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

HTS Code

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Current - Test

Transistor Type

Gain

Power - Output

Voltage - Test

RoHS Status

Subcategory

Operating Temperature (Max)

Configuration

Polarity/Channel Type

FET Technology

View Compare
AFT23H160-25SR3

NXP USA Inc.

10 Weeks

NI-880X-4L4S-8

Tape & Reel (TR)

2006

Active

Not Applicable

EAR99

65V

8541.29.00.75

NOT SPECIFIED

2.3GHz

NOT SPECIFIED

450mA

LDMOS (Dual)

16.7dB

32W

28V

ROHS3 Compliant

-

-

-

-

-

-
AFT26P100-4WGSR3

NXP USA Inc.

10 Weeks

-

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

-

8541.29.00.75

260

-

40

-

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

AFT23H160-25SR3 vs AFT26P100-4WGSR3
AFT23S160W02SR3

NXP USA Inc.

10 Weeks

NI-780S

Tape & Reel (TR)

2013

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

260

2.4GHz

40

1.1A

LDMOS

17.9dB

45W

28V

ROHS3 Compliant

FET General Purpose Power

125°C

Single

N-CHANNEL

METAL-OXIDE SEMICONDUCTOR

AFT23H160-25SR3 vs AFT23S160W02SR3
AFT21H350W03SR6

NXP USA Inc.

10 Weeks

NI-1230S

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

260

2.11GHz

40

750mA

LDMOS

16.4dB

63W

28V

ROHS3 Compliant

FET General Purpose Power

125°C

Single

N-CHANNEL

METAL-OXIDE SEMICONDUCTOR

AFT23H160-25SR3 vs AFT21H350W03SR6