NXP USA Inc. AFT21S230SR3

Name: AFT21S230SR3
Brand: NXP USA Inc.
SKU: 2477339-AFT21S230SR3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: AFT21S230SR3

Manufacturer:: NXP USA Inc.

Ventron No:: 2477339-AFT21S230SR3

Description:: FET RF 65V 2.11GHZ NI780S-6

ECAD Model:

Datasheet:: AFT21S230SR3

Specifications

NXP USA Inc. AFT21S230SR3 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. AFT21S230SR3.

Factory Lead Time
10 Weeks
Package / Case
NI-780S
Packaging
Tape & Reel (TR)
Published
2006
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
Not Applicable
ECCN Code
EAR99
Voltage - Rated
65V
HTS Code
8541.29.00.40
Subcategory
FET General Purpose Power
Peak Reflow Temperature (Cel)
260
Frequency
2.11GHz
Time@Peak Reflow Temperature-Max (s)
40
Operating Temperature (Max)
150°C
Configuration
Single
Current - Test
1.5A
Polarity/Channel Type
N-CHANNEL
Transistor Type
LDMOS
Gain
16.7dB
Power - Output
50W
FET Technology
METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs)
161W
Voltage - Test
28V
RoHS Status
ROHS3 Compliant

Description

AFT21S230SR3 Description
These 50 W RF power LDMOS transistors are intended for use in cellular base station applications operating in the 2110 to 2170 MHz frequency range. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance. This product can be applied in a variety of circumstances and is meant for general use.

AFT21S230SR3 Features
Improved Class C Operation through Extended Negative Gate-Source Voltage Range
Incorporated into Digital Predistortion Error Correction Systems
Designed with Doherty Applications in Mind
R3 Suffix = 250 Units, 44 mm Tape Width, NI—780S—2L2L, NI—780S—2L4S thirteen-inch reel
R3 Suffix = 250 Units, 56 mm Tape Width, 13-inch Reel, NI—780S—2L. See page 17 for possibilities for R5 Tape and Reels.

AFT21S230SR3 Applications
Switching applications

AFT21S230SR3 More Descriptions

RF Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET
Airfast RF Power LDMOS Transistor, 2110-2170 MHz, 50 W Avg., 28 V, CFM6F, RoHSNXP Semiconductors SCT
RF Power Transistor,2110 to 2170 MHz, 182 W, Typ Gain in dB is 16.7 @ 2110 MHz, 28 V, LDMOS, SOT1799

Product Comparison

The three parts on the right have similar specifications to AFT21S230SR3.

Image

Part Number

Manufacturer

Factory Lead Time

Package / Case

Packaging

Published

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Voltage - Rated

HTS Code

Subcategory

Peak Reflow Temperature (Cel)

Frequency

Time@Peak Reflow Temperature-Max (s)

Operating Temperature (Max)

Configuration

Current - Test

Polarity/Channel Type

Transistor Type

Gain

Power - Output

FET Technology

Power Dissipation-Max (Abs)

Voltage - Test

RoHS Status

View Compare
AFT21S230SR3

NXP USA Inc.

10 Weeks

NI-780S

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.11GHz

40

150°C

Single

1.5A

N-CHANNEL

LDMOS

16.7dB

50W

METAL-OXIDE SEMICONDUCTOR

161W

28V

ROHS3 Compliant

-
AFT26P100-4WGSR3

NXP USA Inc.

10 Weeks

-

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

-

8541.29.00.75

-

260

-

40

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

AFT21S230SR3 vs AFT26P100-4WGSR3
AFT26H250-24SR6

NXP USA Inc.

10 Weeks

NI-1230-4LS2L

Tape & Reel (TR)

2006

Active

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.5GHz

40

225°C

Single

700mA

N-CHANNEL

LDMOS

14.1dB

50W

METAL-OXIDE SEMICONDUCTOR

-

28V

ROHS3 Compliant

AFT21S230SR3 vs AFT26H250-24SR6
AFT21H350W03SR6

NXP USA Inc.

10 Weeks

NI-1230S

Tape & Reel (TR)

2006

Not For New Designs

Not Applicable

EAR99

65V

8541.29.00.40

FET General Purpose Power

260

2.11GHz

40

125°C

Single

750mA

N-CHANNEL

LDMOS

16.4dB

63W

METAL-OXIDE SEMICONDUCTOR

-

28V

ROHS3 Compliant

AFT21S230SR3 vs AFT21H350W03SR6