Rohm Semiconductor 2SCR522MT2L
- Part Number:
- 2SCR522MT2L
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3585253-2SCR522MT2L
- Description:
- TRANS NPN 20V 0.2A VMT3
- ECAD Model:
-
- Datasheet:
- 2SCR522MT2L
Rohm Semiconductor 2SCR522MT2L technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SCR522MT2L.
- Factory Lead Time13 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-723
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- JESD-30 CodeR-PDSO-F3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product400MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)20V
- Max Collector Current200mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage20V
- Transition Frequency400MHz
- Collector Emitter Saturation Voltage120mV
- Max Breakdown Voltage20V
- Collector Base Voltage (VCBO)20V
- Emitter Base Voltage (VEBO)5V
- hFE Min120
- Continuous Collector Current200mA
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SCR522MT2L Overview
In this device, the DC current gain is 120 @ 1mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
2SCR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522MT2L Applications
There are a lot of ROHM Semiconductor
2SCR522MT2L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 120 @ 1mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 120mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Maintaining the continuous collector voltage at 200mA is essential for high efficiency.Keeping the emitter base voltage at 5V allows for a high level of efficiency.400MHz is present in the transition frequency.An input voltage of 20V volts is the breakdown voltage.Maximum collector currents can be below 200mA volts.
2SCR522MT2L Features
the DC current gain for this device is 120 @ 1mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
a transition frequency of 400MHz
2SCR522MT2L Applications
There are a lot of ROHM Semiconductor
2SCR522MT2L applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SCR522MT2L More Descriptions
BJT NPN General Purpose Amplification Transistor
Trans GP BJT NPN 20V 0.2A 3-Pin SOT-723 T/R
TRANS, NPN, 20V, 0.2A, 150DEG C, 0.15W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 150mW; DC Collector Current: 200mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans GP BJT NPN 20V 0.2A 3-Pin SOT-723 T/R
TRANS, NPN, 20V, 0.2A, 150DEG C, 0.15W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 20V; Transition Frequency ft: 400MHz; Power Dissipation Pd: 150mW; DC Collector Current: 200mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-723; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to 2SCR522MT2L.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsElement ConfigurationTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRoHS StatusLead FreeNumber of PinsConfigurationPower - MaxFrequency - TransitionTurn Off Time-Max (toff)Turn On Time-Max (ton)View Compare
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2SCR522MT2L13 WeeksTinSurface MountSurface MountSOT-723SILICON150°C TJTape & Reel (TR)2015e2yesActive1 (Unlimited)3EAR99Other Transistors150mWDUALFLAT260103R-PDSO-F3Not Qualified1SingleSWITCHING400MHzNPNNPN20V200mA120 @ 1mA 2V100nA ICBO300mV @ 10mA, 100mA20V400MHz120mV20V20V5V120200mAROHS3 CompliantLead Free------- -
20 Weeks-Surface MountSurface MountSC-96SILICON150°C TJCut Tape (CT)2013e1yesActive1 (Unlimited)3EAR99Other Transistors1WDUALGULL WING260103R-PDSO-G3Not Qualified1-SWITCHING-NPNNPN300mV700mA120 @ 100mA 3V1μA ICBO300mV @ 15mA, 300mA80V320MHz-80V----ROHS3 CompliantLead Free96SINGLE1W320MHz750ns50ns
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20 Weeks-Surface MountSurface MountSC-96SILICON150°C TJCut Tape (CT)2013e1yesActive1 (Unlimited)3EAR99Other Transistors1WDUALGULL WINGNOT SPECIFIEDNOT SPECIFIED3R-PDSO-G3Not Qualified1-SWITCHING-NPNNPN350mV3A180 @ 100mA 3V1μA ICBO350mV @ 100mA, 2A50V300MHz-50V----ROHS3 CompliantLead Free96SINGLE1W300MHz--
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13 WeeksTinSurface MountSurface MountSC-89, SOT-490SILICON150°C TJTape & Reel (TR)2015e1yesActive1 (Unlimited)3EAR99Other Transistors150mWDUALFLAT260103R-PDSO-F3Not Qualified1SingleSWITCHING400MHzNPNNPN20V200mA120 @ 1mA 2V100nA ICBO300mV @ 10mA, 100mA20V400MHz120mV20V20V5V120200mAROHS3 CompliantLead Free------
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