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2SAR533PT100

Rohm Semiconductor 2SAR533PT100

Part Number:
2SAR533PT100
Manufacturer:
Rohm Semiconductor
Ventron No:
3068982-2SAR533PT100
Description:
TRANS PNP 50V 3A SOT-89
ECAD Model:
Datasheet:
2SAR533PT100

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Specifications
Rohm Semiconductor 2SAR533PT100 technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SAR533PT100.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Copper, Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-243AA
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • JESD-609 Code
    e2
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN COPPER
  • Subcategory
    Other Transistors
  • Max Power Dissipation
    2W
  • Terminal Position
    SINGLE
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    10
  • Base Part Number
    2SAR533
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE
  • Power Dissipation
    2W
  • Case Connection
    COLLECTOR
  • Transistor Application
    SWITCHING
  • Polarity/Channel Type
    PNP
  • Transistor Type
    PNP
  • Collector Emitter Voltage (VCEO)
    400mV
  • Max Collector Current
    3A
  • DC Current Gain (hFE) (Min) @ Ic, Vce
    180 @ 50mA 3V
  • Current - Collector Cutoff (Max)
    1μA ICBO
  • Vce Saturation (Max) @ Ib, Ic
    400mV @ 50mA, 1A
  • Collector Emitter Breakdown Voltage
    50V
  • Max Frequency
    300MHz
  • Transition Frequency
    300MHz
  • Max Breakdown Voltage
    50V
  • Frequency - Transition
    300MHz
  • Collector Base Voltage (VCBO)
    50V
  • Emitter Base Voltage (VEBO)
    -6V
  • hFE Min
    180
  • Continuous Collector Current
    -3A
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
2SAR533PT100 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 180 @ 50mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 1A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -6V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 3A volts.

2SAR533PT100 Features
the DC current gain for this device is 180 @ 50mA 3V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at -6V
a transition frequency of 300MHz


2SAR533PT100 Applications
There are a lot of ROHM Semiconductor
2SAR533PT100 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2SAR533PT100 More Descriptions
Small Signal Bipolar Transistor, 3A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 50V 3A 2000mW 4-Pin(3 Tab) MPT T/R
TRANS PNP 50V 3A SOT-89
TRANS PNP 50V 3A MPT3
OEMs, CMs ONLY (NO BROKERS)
Product Comparison
The three parts on the right have similar specifications to 2SAR533PT100.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation
    Case Connection
    Transistor Application
    Polarity/Channel Type
    Transistor Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Vce Saturation (Max) @ Ib, Ic
    Collector Emitter Breakdown Voltage
    Max Frequency
    Transition Frequency
    Max Breakdown Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    Continuous Collector Current
    Radiation Hardening
    RoHS Status
    Lead Free
    Reach Compliance Code
    JESD-30 Code
    Power - Max
    Qualification Status
    Element Configuration
    Gain Bandwidth Product
    Collector Emitter Saturation Voltage
    View Compare
  • 2SAR533PT100
    2SAR533PT100
    Rohm Semiconductor
    4 Weeks
    Copper, Tin
    Surface Mount
    Surface Mount
    TO-243AA
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2013
    e2
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    TIN COPPER
    Other Transistors
    2W
    SINGLE
    FLAT
    260
    10
    2SAR533
    3
    1
    SINGLE
    2W
    COLLECTOR
    SWITCHING
    PNP
    PNP
    400mV
    3A
    180 @ 50mA 3V
    1μA ICBO
    400mV @ 50mA, 1A
    50V
    300MHz
    300MHz
    50V
    300MHz
    50V
    -6V
    180
    -3A
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
  • 2SAR513P5T100
    2SAR513P5T100
    Rohm Semiconductor
    13 Weeks
    -
    Surface Mount
    Surface Mount
    TO-243AA
    -
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2016
    -
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    500mW
    SINGLE
    FLAT
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    1
    SINGLE
    -
    COLLECTOR
    SWITCHING
    PNP
    PNP
    400mV
    1A
    180 @ 50mA 2V
    1μA ICBO
    400mV @ 25mA, 500mA
    50V
    -
    400MHz
    50V
    400MHz
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    not_compliant
    R-PSSO-F3
    500mW
    -
    -
    -
    -
    2SAR533PT100 vs 2SAR513P5T100
  • 2SAR512PT100
    2SAR512PT100
    Rohm Semiconductor
    9 Weeks
    -
    Surface Mount
    Surface Mount
    TO-243AA
    3
    SILICON
    150°C TJ
    Tape & Reel (TR)
    2013
    e2
    yes
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    TIN COPPER
    Other Transistors
    2W
    -
    FLAT
    260
    10
    -
    3
    1
    -
    -
    COLLECTOR
    SWITCHING
    PNP
    PNP
    400mV
    2A
    200 @ 100mA 2V
    1μA ICBO
    400mV @ 35mA, 700mA
    30V
    -
    430MHz
    30V
    -
    -30V
    -6V
    200
    -
    -
    ROHS3 Compliant
    Lead Free
    not_compliant
    -
    2W
    Not Qualified
    Single
    430MHz
    -200mV
    2SAR533PT100 vs 2SAR512PT100
  • 2SAR340PT100P
    2SAR340PT100P
    Rohm Semiconductor
    13 Weeks
    -
    Surface Mount
    Surface Mount
    TO-243AA
    -
    -
    150°C TJ
    Tape & Reel (TR)
    2015
    -
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    500mW
    -
    -
    NOT SPECIFIED
    NOT SPECIFIED
    -
    -
    -
    -
    -
    -
    -
    -
    PNP
    400mV
    100mA
    82 @ 10mA 10V
    10μA ICBO
    400mV @ 2mA, 20mA
    400V
    -
    -
    400V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    500mW
    -
    -
    -
    -
    2SAR533PT100 vs 2SAR340PT100P
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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