Rohm Semiconductor 2SAR523EBTL
- Part Number:
- 2SAR523EBTL
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3585114-2SAR523EBTL
- Description:
- TRANS PNP 50V 0.1A EMT3F
- ECAD Model:
-
- Datasheet:
- 2SAR523EBTL
Rohm Semiconductor 2SAR523EBTL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SAR523EBTL.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-89, SOT-490
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2015
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Max Power Dissipation150mW
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Element ConfigurationSingle
- Power - Max150mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)400mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage-150mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)-5V
- hFE Min120
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SAR523EBTL Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
2SAR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523EBTL Applications
There are a lot of ROHM Semiconductor
2SAR523EBTL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 1mA 6V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -150mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 5mA, 50mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Parts of this part have transition frequencies of 300MHz.Single BJT transistor can take a breakdown input voltage of 50V volts.During maximum operation, collector current can be as low as 100mA volts.
2SAR523EBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523EBTL Applications
There are a lot of ROHM Semiconductor
2SAR523EBTL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SAR523EBTL More Descriptions
2SAR523EBTL Rohm Bipolar(BJT) Transistor PNP 50 V100 mA 300MHz 150 mW Surface Mount EMT3F (SOT-416FL) T/R RoHS
Trans GP BJT PNP 50V 0.1A 3-Pin SOT-416FL T/R
TRANS, PNP, -50V, -0.1A, 150DEG C, 0.15W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Trans GP BJT PNP 50V 0.1A 3-Pin SOT-416FL T/R
TRANS, PNP, -50V, -0.1A, 150DEG C, 0.15W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: -; Power Dissipation Pd: 150mW; DC Collector Current: 100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-416; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
The three parts on the right have similar specifications to 2SAR523EBTL.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinRoHS StatusLead FreeJESD-30 CodeConfigurationFrequency - TransitionContact PlatingBase Part NumberPower DissipationCase ConnectionMax FrequencyContinuous Collector CurrentRadiation HardeningReach Compliance CodeCurrent - Collector (Ic) (Max)View Compare
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2SAR523EBTL13 WeeksSurface MountSurface MountSC-89, SOT-4903SILICON150°C TJTape & Reel (TR)2015e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors150mWDUALFLAT260103Not Qualified1Single150mWSWITCHING300MHzPNPPNP400mV100mA120 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V300MHz-150mV50V-50V-5V120ROHS3 CompliantLead Free------------- -
20 WeeksSurface MountSurface MountSC-9696SILICON150°C TJCut Tape (CT)2016e1yesActive1 (Unlimited)3EAR99-Other Transistors1WDUALGULL WING260103Not Qualified1-1WSWITCHING-PNPPNP400mV1.5A120 @ 100mA 3V1μA ICBO400mV @ 25mA, 500mA80V340MHz-80V---ROHS3 CompliantLead FreeR-PDSO-G3SINGLE340MHz---------
-
4 WeeksSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)2013e2yesNot For New Designs1 (Unlimited)3EAR99TIN COPPEROther Transistors2WSINGLEFLAT260103-1--SWITCHING-PNPPNP400mV3A180 @ 50mA 3V1μA ICBO400mV @ 50mA, 1A50V300MHz-50V50V-6V180ROHS3 CompliantLead Free-SINGLE300MHzCopper, Tin2SAR5332WCOLLECTOR300MHz-3ANo--
-
-Surface MountSurface MountTO-243AA-SILICON150°C TJTape & Reel (TR)2009e2yesNot For New Designs1 (Unlimited)3EAR99Tin/Copper (Sn/Cu)Other Transistors2W-FLAT260103Not Qualified1Single-SWITCHING340MHzPNPPNP400mV1.5A120 @ 100mA 3V1μA ICBO400mV @ 25mA, 500mA80V340MHz-200mV--80V-6V-ROHS3 CompliantLead FreeR-PSSO-F3-----COLLECTOR--1.5A-not_compliant1.5A
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