Rohm Semiconductor 2SAR523UBTL
- Part Number:
- 2SAR523UBTL
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2465236-2SAR523UBTL
- Description:
- TRANS PNP 50V 0.1A UMT3FM
- Datasheet:
- 2SAR523UBTL
Rohm Semiconductor 2SAR523UBTL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor 2SAR523UBTL.
- Factory Lead Time13 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-85
- Number of Pins85
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Max Power Dissipation200mW
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- JESD-30 CodeR-PDSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power - Max200mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product300MHz
- Polarity/Channel TypePNP
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)400mV
- Max Collector Current100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA 6V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage50V
- Transition Frequency300MHz
- Collector Emitter Saturation Voltage-150mV
- Max Breakdown Voltage50V
- Collector Base Voltage (VCBO)-50V
- Emitter Base Voltage (VEBO)-5V
- hFE Min120
- Continuous Collector Current-100mA
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2SAR523UBTL Overview
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -150mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -100mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 100mA volts.
2SAR523UBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523UBTL Applications
There are a lot of ROHM Semiconductor
2SAR523UBTL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 120 @ 1mA 6V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of -150mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -100mA is necessary for high efficiency.The base voltage of the emitter can be kept at -5V to achieve high efficiency.In this part, there is a transition frequency of 300MHz.As a result, it can handle voltages as low as 50V volts.The maximum collector current is 100mA volts.
2SAR523UBTL Features
the DC current gain for this device is 120 @ 1mA 6V
a collector emitter saturation voltage of -150mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
a transition frequency of 300MHz
2SAR523UBTL Applications
There are a lot of ROHM Semiconductor
2SAR523UBTL applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2SAR523UBTL More Descriptions
2SAR523UB Series 50 V 100 mA PNP General Purpose Transistor - UMT3F
Trans GP BJT PNP 50V 0.1A 3-Pin UMTF T/R
TRANS, PNP, -50V, -0.1A, 150DEG C, 0.2W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
Trans GP BJT PNP 50V 0.1A 3-Pin UMTF T/R
TRANS, PNP, -50V, -0.1A, 150DEG C, 0.2W; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 200mW; DC Collector Current: -100mA; DC Current Gain hFE: 120hFE; Transistor Case Style: SOT-323FL; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to 2SAR523UBTL.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinContinuous Collector CurrentRadiation HardeningRoHS StatusLead FreeReach Compliance CodeQualification StatusCurrent - Collector (Ic) (Max)ConfigurationCase ConnectionFrequency - TransitionView Compare
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2SAR523UBTL13 WeeksSurface MountSurface MountSC-8585SILICON150°C TJTape & Reel (TR)2006e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)Other Transistors200mWDUALFLAT260103R-PDSO-F31Single200mWSWITCHING300MHzPNPPNP400mV100mA120 @ 1mA 6V100nA ICBO400mV @ 5mA, 50mA50V300MHz-150mV50V-50V-5V120-100mANoROHS3 CompliantLead Free-------
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-Surface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)2013-yesNot For New Designs1 (Unlimited)3EAR99-Other Transistors2W-FLATNOT SPECIFIEDNOT SPECIFIED3-1Single-AMPLIFIER320MHzPNPPNP350mV1A270 @ 100mA 2V100nA ICBO350mV @ 25mA, 500mA30V320MHz-150mV--30V-6V270--ROHS3 CompliantLead Freenot_compliantNot Qualified1A---
-
13 WeeksSurface MountSurface MountTO-243AA-SILICON150°C TJTape & Reel (TR)2016--Active1 (Unlimited)3EAR99--500mWSINGLEFLATNOT SPECIFIEDNOT SPECIFIED-R-PSSO-F31-500mWSWITCHING-PNPPNP400mV1A180 @ 50mA 2V1μA ICBO400mV @ 25mA, 500mA50V400MHz-50V-----ROHS3 Compliant-not_compliant--SINGLECOLLECTOR400MHz
-
9 WeeksSurface MountSurface MountTO-243AA3SILICON150°C TJTape & Reel (TR)2013e2yesNot For New Designs1 (Unlimited)3EAR99TIN COPPEROther Transistors2W-FLAT260103-1Single2WSWITCHING430MHzPNPPNP400mV2A200 @ 100mA 2V1μA ICBO400mV @ 35mA, 700mA30V430MHz-200mV30V-30V-6V200--ROHS3 CompliantLead Freenot_compliantNot Qualified--COLLECTOR-
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