ON Semiconductor 2N6426RLRAG
- Part Number:
- 2N6426RLRAG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2846928-2N6426RLRAG
- Description:
- TRANS NPN DARL 40V 0.5A TO-92
- Datasheet:
- 2N6426RLRAG
ON Semiconductor 2N6426RLRAG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6426RLRAG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
- Contact PlatingCopper, Silver, Tin
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Surface MountNO
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2007
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- SubcategoryOther Transistors
- Voltage - Rated DC40V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Peak Reflow Temperature (Cel)260
- Current Rating500mA
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6426
- Pin Count3
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product150MHz
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)40V
- Max Collector Current500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce30000 @ 100mA 5V
- Current - Collector Cutoff (Max)1μA
- Vce Saturation (Max) @ Ib, Ic1.5V @ 500μA, 500mA
- Collector Emitter Breakdown Voltage40V
- Transition Frequency125MHz
- Collector Emitter Saturation Voltage1.2V
- Collector Base Voltage (VCBO)40V
- Emitter Base Voltage (VEBO)12V
- Continuous Collector Current500mA
- Height6.35mm
- Length6.35mm
- Width6.35mm
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
2N6426RLRAG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500μA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 125MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N6426RLRAG Features
the DC current gain for this device is 30000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz
2N6426RLRAG Applications
There are a lot of ON Semiconductor
2N6426RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30000 @ 100mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 500μA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 12V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 125MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2N6426RLRAG Features
the DC current gain for this device is 30000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 500μA, 500mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 125MHz
2N6426RLRAG Applications
There are a lot of ON Semiconductor
2N6426RLRAG applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6426RLRAG More Descriptions
Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
NPN Bipolar Darlington Transistor
DarlingtonTransistor; Transistor Type:Darlington; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Continuous Collector Current, Ic:500A; Collector Emitter Saturation Voltage, Vce(sat):1.5V ;RoHS Compliant: Yes
NPN Bipolar Darlington Transistor
DarlingtonTransistor; Transistor Type:Darlington; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:40V; Continuous Collector Current, Ic:500A; Collector Emitter Saturation Voltage, Vce(sat):1.5V ;RoHS Compliant: Yes
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