ON Semiconductor 2N6491
- Part Number:
- 2N6491
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3813539-2N6491
- Description:
- TRANS PNP 80V 15A TO220AB
- ECAD Model:
-
- Datasheet:
- 2N6491
ON Semiconductor 2N6491 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6491.
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Supplier Device PackageTO-220AB
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Power - Max1.8W
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 5A 4V
- Current - Collector Cutoff (Max)1mA
- Vce Saturation (Max) @ Ib, Ic3.5V @ 5A, 15A
- Voltage - Collector Emitter Breakdown (Max)80V
- Current - Collector (Ic) (Max)15A
- Frequency - Transition5MHz
- RoHS StatusNon-RoHS Compliant
2N6491 Overview
This device has a DC current gain of 20 @ 5A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3.5V @ 5A, 15A means Ic has reached its maximum value(saturated).Product package TO-220AB comes from the supplier.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
2N6491 Features
the DC current gain for this device is 20 @ 5A 4V
the vce saturation(Max) is 3.5V @ 5A, 15A
the supplier device package of TO-220AB
2N6491 Applications
There are a lot of Rochester Electronics, LLC
2N6491 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 20 @ 5A 4V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 3.5V @ 5A, 15A means Ic has reached its maximum value(saturated).Product package TO-220AB comes from the supplier.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.
2N6491 Features
the DC current gain for this device is 20 @ 5A 4V
the vce saturation(Max) is 3.5V @ 5A, 15A
the supplier device package of TO-220AB
2N6491 Applications
There are a lot of Rochester Electronics, LLC
2N6491 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6491 More Descriptions
Tube Through Hole PNP Single Bipolar (BJT) Transistor 20 @ 5A 4V 15A 1.8W 5MHz
Power Bipolar Transistor, NPN, 80 V, 15 A
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS GP BJT PNP 80V 15A 3PIN TO-220AB - Rail/Tube
Power Bipolar Transistor, NPN, 80 V, 15 A
Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
TRANS GP BJT PNP 80V 15A 3PIN TO-220AB - Rail/Tube
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