ON Semiconductor 2N6387G
- Part Number:
- 2N6387G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 3813395-2N6387G
- Description:
- TRANS NPN DARL 60V 10A TO220AB
- Datasheet:
- 2N6387G
ON Semiconductor 2N6387G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor 2N6387G.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time2 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-65°C~150°C TJ
- PackagingTube
- Published2001
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryOther Transistors
- Voltage - Rated DC60V
- Max Power Dissipation2W
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Current Rating10A
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2N6387
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- PolarityNPN
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Transistor ApplicationAMPLIFIER
- Transistor TypeNPN - Darlington
- Collector Emitter Voltage (VCEO)60V
- Max Collector Current10A
- DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 5A 3V
- Current - Collector Cutoff (Max)1mA
- JEDEC-95 CodeTO-220AB
- Vce Saturation (Max) @ Ib, Ic3V @ 100mA, 10A
- Collector Emitter Breakdown Voltage60V
- Transition Frequency20MHz
- Collector Emitter Saturation Voltage2V
- Collector Base Voltage (VCBO)60V
- Emitter Base Voltage (VEBO)5V
- hFE Min100
- Height15.748mm
- Length10.2616mm
- Width4.826mm
- REACH SVHCNo SVHC
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N6387G Overview
In this device, the DC current gain is 1000 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).20MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.
2N6387G Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 20MHz
2N6387G Applications
There are a lot of ON Semiconductor
2N6387G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 1000 @ 5A 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 2V ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 3V @ 100mA, 10A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).20MHz is present in the transition frequency.Maximum collector currents can be below 10A volts.
2N6387G Features
the DC current gain for this device is 1000 @ 5A 3V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 100mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 20MHz
2N6387G Applications
There are a lot of ON Semiconductor
2N6387G applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N6387G More Descriptions
10 A, 80 V NPN Darlington Bipolar Power Transistor
Transistor 2N6387 Darlington NPN 60 Volt 10 Amp TO-220AB
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor Darlington NPN 60V 10A 3-Pin TO-220AB Rail - Rail/Tube
Transistors, Darlington, 10A 60V Bipolar Power NPN | ON Semiconductor 2N6387G
2N Series 60 V 10 A Darlington Medium-Power Transistor - TO-220AB
TRANSISTOR, BIPOL, NPN, 60V, TO-220-3
TRANSISTOR, BIPOL, NPN, 60V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 10A; DC Current Gain hFE: 100hFE; Transistor
Darlington Transistor, Npn, 60V, To-220; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:60V Rohs Compliant: Yes |Onsemi 2N6387G.
Transistor 2N6387 Darlington NPN 60 Volt 10 Amp TO-220AB
Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
Transistor Darlington NPN 60V 10A 3-Pin TO-220AB Rail - Rail/Tube
Transistors, Darlington, 10A 60V Bipolar Power NPN | ON Semiconductor 2N6387G
2N Series 60 V 10 A Darlington Medium-Power Transistor - TO-220AB
TRANSISTOR, BIPOL, NPN, 60V, TO-220-3
TRANSISTOR, BIPOL, NPN, 60V, TO-220-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: -; Power Dissipation Pd: 2W; DC Collector Current: 10A; DC Current Gain hFE: 100hFE; Transistor
Darlington Transistor, Npn, 60V, To-220; Transistor Polarity:Npn; No. Of Pins:3Pins; Transistor Mounting:Through Hole; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:60V Rohs Compliant: Yes |Onsemi 2N6387G.
The three parts on the right have similar specifications to 2N6387G.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryVoltage - Rated DCMax Power DissipationPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountQualification StatusNumber of ElementsPolarityElement ConfigurationPower DissipationCase ConnectionTransistor ApplicationTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)JEDEC-95 CodeVce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinHeightLengthWidthREACH SVHCRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower - MaxVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Continuous Collector CurrentRadiation HardeningSurface MountTerminal PositionTerminal FormGain Bandwidth ProductPolarity/Channel TypeView Compare
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2N6387GACTIVE (Last Updated: 3 days ago)2 WeeksTinThrough HoleThrough HoleTO-220-334.535924gSILICON-65°C~150°C TJTube2001e3yesActive1 (Unlimited)3EAR99Other Transistors60V2W260not_compliant10A402N63873Not Qualified1NPNSingle2WCOLLECTORAMPLIFIERNPN - Darlington60V10A1000 @ 5A 3V1mATO-220AB3V @ 100mA, 10A60V20MHz2V60V5V10015.748mm10.2616mm4.826mmNo SVHCROHS3 CompliantLead Free--------------
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ACTIVE (Last Updated: 2 days ago)8 WeeksTin-Through HoleTO-220-334.535924g--65°C~150°C TJTube2006--Active1 (Unlimited)---80V2W--10A-2N6388--1NPNSingle65W--NPN - Darlington80V10A1000 @ 5A 3V1mA-3V @ 100mA, 10A80V-2V80V5V10004.82mm15.75mm10.28mmNo SVHCROHS3 CompliantLead FreeTO-220AB150°C-65°C2W80V10A10ANo-----
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----Through HoleTO-220-3----65°C~150°C TJTube---Obsolete1 (Unlimited)------------------NPN - Darlington--1000 @ 5A 3V1mA-3V @ 100mA, 10A----------Non-RoHS Compliant-TO-220AB--2W60V10A-------
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----Through HoleTO-204AA, TO-32-SILICON-65°C~200°C TJTray2001e0-Obsolete1 (Unlimited)2EAR99Other Transistors150V200W240not_compliant25A302N63412Not Qualified1-Single200WCOLLECTORSWITCHINGNPN1.8V25A30 @ 10A 2V50μA-1.8V @ 2.5A, 25A150V40MHz1.8V180V6V50----Non-RoHS CompliantContains Lead--------NOBOTTOMPIN/PEG40MHzNPN
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