Fairchild/ON Semiconductor 2N5550TFR
- Part Number:
- 2N5550TFR
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2845647-2N5550TFR
- Description:
- TRANS NPN 140V 0.6A TO-92
- ECAD Model:
-
- Datasheet:
- 2N5550TFR
Fairchild/ON Semiconductor 2N5550TFR technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5550TFR.
- Lifecycle StatusACTIVE (Last Updated: 21 hours ago)
- Factory Lead Time6 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Number of Pins3
- Weight240mg
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2000
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC140V
- Max Power Dissipation625mW
- Terminal PositionBOTTOM
- Current Rating600mA
- Frequency300MHz
- Base Part Number2N5550
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation625mW
- Transistor ApplicationAMPLIFIER
- Gain Bandwidth Product300MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current600mA
- DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 10mA 5V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 50mA
- Collector Emitter Breakdown Voltage140V
- Transition Frequency100MHz
- Collector Emitter Saturation Voltage250mV
- Max Breakdown Voltage140V
- Collector Base Voltage (VCBO)160V
- Emitter Base Voltage (VEBO)6V
- hFE Min60
- Height4.58mm
- Length4.58mm
- Width3.86mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
2N5550TFR Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 140V volts can be used.A maximum collector current of 600mA volts is possible.
2N5550TFR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TFR Applications
There are a lot of ON Semiconductor
2N5550TFR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.A VCE saturation (Max) of 250mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 600mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 100MHz.A breakdown input voltage of 140V volts can be used.A maximum collector current of 600mA volts is possible.
2N5550TFR Features
the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz
2N5550TFR Applications
There are a lot of ON Semiconductor
2N5550TFR applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N5550TFR More Descriptions
Small Signal Bipolar Transistor, 0.6A I(C), 140V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Transistor,bjt,npn,140V V(Br)Ceo,600Ma I(C),to-92 Rohs Compliant: Yes |Onsemi 2N5550TFR
2N5550 Series 140 V 600 mA NPN Epitaxial Silicon Transistor - TO-92-3
Transistor GP BJT NPN 140V 0.6A 3-Pin TO-92 T/R - Tape and Reel
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Transistor 2N5550 NPN General Purpose Amplifier TO-92
140V 625mW 600mA 60@10mA5V 100MHz 250mV@50mA5mA NPN 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
Transistor,bjt,npn,140V V(Br)Ceo,600Ma I(C),to-92 Rohs Compliant: Yes |Onsemi 2N5550TFR
2N5550 Series 140 V 600 mA NPN Epitaxial Silicon Transistor - TO-92-3
Transistor GP BJT NPN 140V 0.6A 3-Pin TO-92 T/R - Tape and Reel
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Transistor 2N5550 NPN General Purpose Amplifier TO-92
140V 625mW 600mA 60@10mA5V 100MHz 250mV@50mA5mA NPN 150¡Í@(Tj) TO-92-3L Bipolar Transistors - BJT ROHS
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