Fairchild/ON Semiconductor 2N5551BU

Name: 2N5551BU
Brand: Fairchild/ON Semiconductor
SKU: 3585027-2N5551BU
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N5551BU

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 3585027-2N5551BU

Description:: TRANS NPN 160V 0.6A TO-92

ECAD Model:

Datasheet:: 2N5551BU

Specifications

Fairchild/ON Semiconductor 2N5551BU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor 2N5551BU.

Factory Lead Time
7 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Weight
179mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
160V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Current Rating
600mA
Frequency
300MHz
Base Part Number
2N5551
Number of Elements
1
Element Configuration
Single
Power Dissipation
625mW
Transistor Application
AMPLIFIER
Gain Bandwidth Product
300MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
160V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA 5V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
160V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
200mV
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
180V
Emitter Base Voltage (VEBO)
6V
hFE Min
80
Height
5.33mm
Length
5.2mm
Width
4.19mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

2N5551BU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 80 @ 10mA 5V DC current gain.As it features a collector emitter saturation voltage of 200mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 100MHz in the part.When collector current reaches its maximum, it can reach 600mA volts.

2N5551BU Features
the DC current gain for this device is 80 @ 10mA 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 200mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 100MHz

2N5551BU Applications
There are a lot of ON Semiconductor
2N5551BU applications of single BJT transistors.

Inverter
Interface
Driver
Muting

2N5551BU More Descriptions

Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Bipolar Transistors - BJT NPN Transistor General Purpose
160V 625mW 600mA NPN TO-92 Bipolar Transistors - BJT ROHS
2N5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - TO-92-3
Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Bag
TRANSISTOR, NPN, 160V, 0.6A, TO-92-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 160V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 625mW; DC Collector Current: 600mA; DC Current Gain hFE: 30hFE; T

Certification

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2N5551BU Specification

Part Number	Manufacturers	Description	Stock	Price
2N5551BU DISTI #	ON Semiconductor	NPN/150V/0.6A/80-250	22798	1 $0.0252 10 $0.0227 100 $0.0208
2N5551BU DISTI #	ON Semiconductor	TRANS NPN 160V 0.6A TO-92 RoHS: Compliant	11085	1 $0.29 10 $0.239 100 $0.1269 500 $0.08348 1000 $0.05676
2N5551BU DISTI #	ON Semiconductor	NPN/150V/0.6A/80-250	22798	268 $0.0208
2N5551BU DISTI #	ON Semiconductor	Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk - Bulk RoHS: Compliant	59902	30000 $0.02521 50000 $0.02453 80000 $0.0239 150000 $0.02329 300000 $0.02272
2N5551BU DISTI #	ON Semiconductor	Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk (Alt: RoHS: Compliant	55000	1 $0.05714 10 $0.04313 25 $0.03486 50 $0.02852 100 $0.02632 500 $0.0254 1000 $0.02465
2N5551BU DISTI #	ON Semiconductor	Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk (Alt: RoHS: Compliant	0
2N5551BU DISTI #	ON Semiconductor	TRANSISTOR, NPN, 160V, 0.6A, TO-92-3, Transistor	10544	1 $0.296 10 $0.2 100 $0.098 500 $0.06 1000 $0.045 2500 $0.038 10000 $0.037 25000 $0.03
2N5551BU. DISTI #	Fairchild Semiconductor Corporation	NPN/150V/0.6A/80-250 , ROHS COMPLIANT: YES	59902	1 $0.299 10 $0.201 100 $0.097 500 $0.057 1000 $0.042 2500 $0.035 10000 $0.034 25000 $0.028
2N5551BU DISTI #	ON Semiconductor	Bipolar Transistors - BJT NPN Transistor General P RoHS: Compliant	27755	1 $0.29 10 $0.191 100 $0.08 1000 $0.055 2500 $0.043 10000 $0.037 25000 $0.034 50000 $0.032 100000 $0.028
2N5551TFR DISTI #	ON Semiconductor	Bipolar Transistors - BJT NPN Transistor General P RoHS: Compliant	30285	1 $0.3 10 $0.203 100 $0.085 1000 $0.058 2000 $0.045 10000 $0.039 24000 $0.036 50000 $0.034 100000 $0.03
2N5551TA DISTI #	ON Semiconductor	Bipolar Transistors - BJT NPN Transistor General P RoHS: Compliant	26519	1 $0.29 10 $0.191 100 $0.08 1000 $0.055 2000 $0.043 10000 $0.037 24000 $0.034 50000 $0.032 100000 $0.028
2N5551TF DISTI #	ON Semiconductor	Bipolar Transistors - BJT NPN Transistor General P RoHS: Compliant	9042	1 $0.26 10 $0.177 100 $0.074 1000 $0.05 2000 $0.04 10000 $0.034 24000 $0.032 50000 $0.03 100000 $0.026
2N5551BU DISTI #	ON Semiconductor	2N5551 Series 160 V CE Breakdown 0.6 A NPN General RoHS: Compliant	20000	30000 $0.0681 50000 $0.0651 70000 $0.0639 90000 $0.0628 99999 $0.0616
2N5551BU DISTI #	Fairchild Semiconductor Corporation	Small Signal Bipolar Transistor, 0.6A I(C), 160V V RoHS: Compliant	656486	1 $0.04 25 $0.03 100 $0.03 500 $0.03 1000 $0.03
2N5551BU DISTI #	ON Semiconductor	TRANSISTOR FAIRCHILD 2N5551BU, PK	2800	200 $0.083 1000 $0.04
2N5551BU DISTI #	ON Semiconductor	TRANSISTOR FAIRCHILD 2N5551BU, BG	9000	1000 $0.04
2N5551BU DISTI #	ON Semiconductor	TRANSISTOR, NPN, 160V, 0.6A, TO-92-3 RoHS: Compliant	10544	5 $0.248 25 $0.199 100 $0.106 250 $0.081 500 $0.065 1000 $0.055 5000 $0.052
2N5551BU DISTI #	ON Semiconductor	GP BJT	1000	50 $0.134 100 $0.067 500 $0.0487 1000 $0.0435
2N5551BU DISTI #	ON Semiconductor	Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 Bulk RoHS: Compliant	22798	100 $0.076 1000 $0.0469 2500 $0.0409
2N5551BU DISTI #	Fairchild Semiconductor Corporation	RoHS: Compliant	13460	10000 $0.1184 13460 $0.1076
2N5551BU DISTI #	ON Semiconductor	TRANSISTOR, NPN, 160V, 0.6A, TO-92-3 RoHS: Compliant	11989	5 $0.168 25 $0.163 100 $0.0677 250 $0.0622 500 $0.048

2N5551B~~(1)~~
2N5551~~(41)~~
2N555~~(57)~~
2N55~~(63)~~
2N5~~(75)~~

Fairchild/ON Semiconductor 2N5551BU

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