Microsemi Corporation 2N3635
- Part Number:
- 2N3635
- Manufacturer:
- Microsemi Corporation
- Ventron No:
- 2466294-2N3635
- Description:
- TRANS PNP 140V 1A
- ECAD Model:
-
- Datasheet:
- 2N3635
Microsemi Corporation 2N3635 technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3635.
- Lifecycle StatusIN PRODUCTION (Last Updated: 3 weeks ago)
- Factory Lead Time22 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-205AD, TO-39-3 Metal Can
- Number of Pins3
- Supplier Device PackageTO-39
- Operating Temperature-65°C~200°C TJ
- PackagingBulk
- Published2007
- Part StatusDiscontinued
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Max Operating Temperature200°C
- Min Operating Temperature-65°C
- Max Power Dissipation1W
- Power - Max1W
- Transistor TypePNP
- Collector Emitter Voltage (VCEO)140V
- Max Collector Current1A
- DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 50mA 10V
- Current - Collector Cutoff (Max)10μA
- Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 50mA
- Voltage - Collector Emitter Breakdown (Max)140V
- Current - Collector (Ic) (Max)1A
- Collector Base Voltage (VCBO)140V
- Radiation HardeningNo
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
2N3635 Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 50mA.Supplier device package TO-39 comes with the product.The device exhibits a collector-emitter breakdown at 140V.Maximum collector currents can be below 1A volts.
2N3635 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-39
2N3635 Applications
There are a lot of Microsemi Corporation
2N3635 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 600mV @ 5mA, 50mA.Supplier device package TO-39 comes with the product.The device exhibits a collector-emitter breakdown at 140V.Maximum collector currents can be below 1A volts.
2N3635 Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA
the supplier device package of TO-39
2N3635 Applications
There are a lot of Microsemi Corporation
2N3635 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to 2N3635.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationPower - MaxTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Collector Base Voltage (VCBO)Radiation HardeningRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeECCN CodeTerminal FinishHTS CodeSubcategoryPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusNumber of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)Turn Off Time-Max (toff)Turn On Time-Max (ton)Number of TerminationsTerminal PositionTerminal FormView Compare
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2N3635IN PRODUCTION (Last Updated: 3 weeks ago)22 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3TO-39-65°C~200°C TJBulk2007Discontinued1 (Unlimited)200°C-65°C1W1WPNP140V1A100 @ 50mA 10V10μA600mV @ 5mA, 50mA140V1A140VNoNon-RoHS CompliantContains Lead------------------------- -
---Through HoleTO-106-3 Domed---65°C~150°C TJBulk-Obsolete1 (Unlimited)---200mWNPN--30 @ 30mA 400mV500nA500mV @ 30mA, 300mA15V200mA--Non-RoHS Compliant-NOSILICONe0noEAR99Tin/Lead (Sn/Pb)8541.21.00.75Other TransistorsNOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified1SINGLESWITCHINGNPN350MHz350MHz0.2W28ns18ns---
-
-12 WeeksThrough HoleThrough HoleTO-205AA, TO-5-3 Metal Can3--65°C~200°C TJBulk2010Active1 (Unlimited)--1W1WPNP140V1A50 @ 50mA 10V10μA600mV @ 5mA, 50mA--140VNoNon-RoHS Compliant--SILICONe0noEAR99TIN LEAD8541.29.00.95Other Transistors----1SINGLEAMPLIFIERPNP-----3BOTTOMWIRE
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IN PRODUCTION (Last Updated: 1 month ago)12 WeeksThrough HoleThrough HoleTO-205AD, TO-39-3 Metal Can3TO-39-65°C~200°C TJBulk2007Active1 (Unlimited)200°C-65°C1W1WPNP175V1A50 @ 50mA 10V10μA600mV @ 5mA, 50mA175V1A175VNoNon-RoHS Compliant-------------------------
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