Microsemi Corporation 2N3635UB

Name: 2N3635UB
Brand: Microsemi Corporation
SKU: 3585330-2N3635UB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N3635UB

Manufacturer:: Microsemi Corporation

Ventron No:: 3585330-2N3635UB

Description:: TRANS PNP 140V 1A

ECAD Model:

Datasheet:: 2N3635UB

Specifications

Microsemi Corporation 2N3635UB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N3635UB.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
22 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.29.00.95
Subcategory
Other Transistors
Max Power Dissipation
1W
Terminal Position
DUAL
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
1.5W
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
140V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 50mA 10V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 50mA
Collector Base Voltage (VCBO)
140V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

2N3635UB Overview
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 600mV @ 5mA, 50mA.In extreme cases, the collector current can be as low as 1A volts.

2N3635UB Features
the DC current gain for this device is 100 @ 50mA 10V
the vce saturation(Max) is 600mV @ 5mA, 50mA

2N3635UB Applications
There are a lot of Microsemi Corporation
2N3635UB applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Product Comparison

The three parts on the right have similar specifications to 2N3635UB.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Max Power Dissipation

Terminal Position

Pin Count

Number of Elements

Configuration

Power - Max

Transistor Application

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Base Voltage (VCBO)

Radiation Hardening

RoHS Status

Terminal Form

Surface Mount

Reach Compliance Code

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Voltage - Collector Emitter Breakdown (Max)

Transition Frequency

Frequency - Transition

Power Dissipation-Max (Abs)

Collector-Base Capacitance-Max

View Compare
2N3635UB

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

22 Weeks

Surface Mount

Surface Mount

3-SMD, No Lead

3

SILICON

-65°C~200°C TJ

Bulk

2007

e0

no

Discontinued

1 (Unlimited)

3

EAR99

TIN LEAD

8541.29.00.95

Other Transistors

1W

DUAL

3

1

SINGLE

1.5W

SWITCHING

PNP

PNP

140V

1A

100 @ 50mA 10V

10μA

600mV @ 5mA, 50mA

140V

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-
2N3634L

Microsemi Corporation

-

12 Weeks

Through Hole

Through Hole

TO-205AA, TO-5-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

2010

e0

no

Active

1 (Unlimited)

3

EAR99

TIN LEAD

8541.29.00.95

Other Transistors

1W

BOTTOM

-

1

SINGLE

1W

AMPLIFIER

PNP

PNP

140V

1A

50 @ 50mA 10V

10μA

600mV @ 5mA, 50mA

140V

No

Non-RoHS Compliant

WIRE

-

-

-

-

-

-

-

-

-

-

2N3635UB vs 2N3634L
2N3636L

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

12 Weeks

Through Hole

Through Hole

TO-205AA, TO-5-3 Metal Can

3

SILICON

-65°C~200°C TJ

Bulk

2007

e0

no

Active

1 (Unlimited)

3

EAR99

TIN LEAD

8541.29.00.95

Other Transistors

1W

BOTTOM

-

1

SINGLE

1W

AMPLIFIER

PNP

PNP

175V

1A

50 @ 50mA 10V

10μA

600mV @ 5mA, 50mA

175V

No

Non-RoHS Compliant

WIRE

-

-

-

-

-

-

-

-

-

-

2N3635UB vs 2N3636L
2N3640

Central Semiconductor Corp

-

-

-

Through Hole

TO-106-3 Domed

-

SILICON

-

Bulk

2008

e0

-

Obsolete

1 (Unlimited)

4

EAR99

Tin/Lead (Sn/Pb)

-

Other Transistors

-

BOTTOM

3

1

SINGLE

-

SWITCHING

PNP

PNP

-

-

30 @ 10mA 300mV

10nA ICBO

-

-

-

Non-RoHS Compliant

WIRE

NO

not_compliant

O-MBCY-W4

Not Qualified

125°C

12V

500MHz

500MHz

0.2W

3.5pF

2N3635UB vs 2N3640