Central Semiconductor Corp 2N3640
- Part Number:
- 2N3640
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2470070-2N3640
- Description:
- TRANSISTOR PNP TO-106
- Datasheet:
- 2N3640
Central Semiconductor Corp 2N3640 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N3640.
- Mounting TypeThrough Hole
- Package / CaseTO-106-3 Domed
- Surface MountNO
- Transistor Element MaterialSILICON
- PackagingBulk
- Published2008
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Reach Compliance Codenot_compliant
- Pin Count3
- JESD-30 CodeO-MBCY-W4
- Qualification StatusNot Qualified
- Operating Temperature (Max)125°C
- Number of Elements1
- ConfigurationSINGLE
- Transistor ApplicationSWITCHING
- Polarity/Channel TypePNP
- Transistor TypePNP
- DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 10mA 300mV
- Current - Collector Cutoff (Max)10nA ICBO
- Voltage - Collector Emitter Breakdown (Max)12V
- Transition Frequency500MHz
- Frequency - Transition500MHz
- Power Dissipation-Max (Abs)0.2W
- Collector-Base Capacitance-Max3.5pF
- RoHS StatusNon-RoHS Compliant
2N3640 Overview
This device has a DC current gain of 30 @ 10mA 300mV, which is the ratio between the base current and the collector current.As you can see, the part has a transition frequency of 500MHz.Collector Emitter Breakdown occurs at 12VV - Maximum voltage.
2N3640 Features
the DC current gain for this device is 30 @ 10mA 300mV
a transition frequency of 500MHz
2N3640 Applications
There are a lot of Central Semiconductor Corp
2N3640 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 30 @ 10mA 300mV, which is the ratio between the base current and the collector current.As you can see, the part has a transition frequency of 500MHz.Collector Emitter Breakdown occurs at 12VV - Maximum voltage.
2N3640 Features
the DC current gain for this device is 30 @ 10mA 300mV
a transition frequency of 500MHz
2N3640 Applications
There are a lot of Central Semiconductor Corp
2N3640 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
The three parts on the right have similar specifications to 2N3640.
-
ImagePart NumberManufacturerMounting TypePackage / CaseSurface MountTransistor Element MaterialPackagingPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormReach Compliance CodePin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsConfigurationTransistor ApplicationPolarity/Channel TypeTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Transition FrequencyFrequency - TransitionPower Dissipation-Max (Abs)Collector-Base Capacitance-MaxRoHS StatusOperating TemperaturePbfree CodeHTS CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power - MaxVce Saturation (Max) @ Ib, IcCurrent - Collector (Ic) (Max)Turn Off Time-Max (toff)Turn On Time-Max (ton)Factory Lead TimeMountNumber of PinsMax Power DissipationCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Base Voltage (VCBO)Radiation HardeningLifecycle StatusView Compare
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2N3640Through HoleTO-106-3 DomedNOSILICONBulk2008e0Obsolete1 (Unlimited)4EAR99Tin/Lead (Sn/Pb)Other TransistorsBOTTOMWIREnot_compliant3O-MBCY-W4Not Qualified125°C1SINGLESWITCHINGPNPPNP30 @ 10mA 300mV10nA ICBO12V500MHz500MHz0.2W3.5pFNon-RoHS Compliant--------------------
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Through HoleTO-106-3 DomedNOSILICONBulk-e0Obsolete1 (Unlimited)-EAR99Tin/Lead (Sn/Pb)Other Transistors--not_compliant--Not Qualified-1SINGLESWITCHINGNPNNPN30 @ 30mA 400mV500nA15V350MHz350MHz0.2W-Non-RoHS Compliant-65°C~150°C TJno8541.21.00.75NOT SPECIFIEDNOT SPECIFIED200mW500mV @ 30mA, 300mA200mA28ns18ns---------
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Through HoleTO-205AA, TO-5-3 Metal Can-SILICONBulk2010e0Active1 (Unlimited)3EAR99TIN LEADOther TransistorsBOTTOMWIRE-----1SINGLEAMPLIFIERPNPPNP50 @ 50mA 10V10μA-----Non-RoHS Compliant-65°C~200°C TJno8541.29.00.95--1W600mV @ 5mA, 50mA---12 WeeksThrough Hole31W140V1A140VNo-
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Through HoleTO-205AA, TO-5-3 Metal Can-SILICONBulk2007e0Active1 (Unlimited)3EAR99TIN LEADOther TransistorsBOTTOMWIRE-----1SINGLEAMPLIFIERPNPPNP50 @ 50mA 10V10μA-----Non-RoHS Compliant-65°C~200°C TJno8541.29.00.95--1W600mV @ 5mA, 50mA---12 WeeksThrough Hole31W175V1A175VNoIN PRODUCTION (Last Updated: 1 month ago)
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