Microsemi Corporation 2N2484UB

Name: 2N2484UB
Brand: Microsemi Corporation
SKU: 3813499-2N2484UB
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: 2N2484UB

Manufacturer:: Microsemi Corporation

Ventron No:: 3813499-2N2484UB

Description:: TRANS NPN 60V 0.05A SMD

ECAD Model:

Datasheet:: 2N2484UB

Specifications

Microsemi Corporation 2N2484UB technical specifications, attributes, parameters and parts with similar specifications to Microsemi Corporation 2N2484UB.

Lifecycle Status
IN PRODUCTION (Last Updated: 1 month ago)
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-SMD, No Lead
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Max Power Dissipation
360mW
Terminal Position
DUAL
Pin Count
3
Number of Elements
1
Configuration
SINGLE
Power - Max
360mW
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
50mA
DC Current Gain (hFE) (Min) @ Ic, Vce
225 @ 10mA 5V
Current - Collector Cutoff (Max)
2nA
Vce Saturation (Max) @ Ib, Ic
300mV @ 100μA, 1mA
Collector Emitter Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant

Description

2N2484UB Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 225 @ 10mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 100μA, 1mA.Single BJT transistor is possible to have a collector current as low as 50mA volts at Single BJT transistors maximum.

2N2484UB Features
the DC current gain for this device is 225 @ 10mA 5V
the vce saturation(Max) is 300mV @ 100μA, 1mA

2N2484UB Applications
There are a lot of Microsemi Corporation
2N2484UB applications of single BJT transistors.

Inverter
Interface
Driver
Muting

Product Comparison

The three parts on the right have similar specifications to 2N2484UB.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Max Power Dissipation

Terminal Position

Pin Count

Number of Elements

Configuration

Power - Max

Polarity/Channel Type

Transistor Type

Collector Emitter Voltage (VCEO)

Max Collector Current

DC Current Gain (hFE) (Min) @ Ic, Vce

Current - Collector Cutoff (Max)

Vce Saturation (Max) @ Ib, Ic

Collector Emitter Breakdown Voltage

Collector Base Voltage (VCBO)

Radiation Hardening

RoHS Status

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Pbfree Code

JEDEC-95 Code

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Qualification Status

Operating Temperature (Max)

Polarity

Power Dissipation-Max

Element Configuration

Transistor Application

Gain Bandwidth Product

Transition Frequency

Collector Emitter Saturation Voltage

Frequency - Transition

Emitter Base Voltage (VEBO)

hFE Min

DC Current Gain-Min (hFE)

View Compare
2N2484UB

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

12 Weeks

Surface Mount

Surface Mount

3-SMD, No Lead

3

SILICON

-65°C~200°C TJ

Bulk

2007

e0

Active

1 (Unlimited)

3

EAR99

TIN LEAD

8541.21.00.95

Other Transistors

360mW

DUAL

3

1

SINGLE

360mW

NPN

NPN

300mV

50mA

225 @ 10mA 5V

2nA

300mV @ 100μA, 1mA

60V

60V

No

Non-RoHS Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
2N2432

Microsemi Corporation

IN PRODUCTION (Last Updated: 3 weeks ago)

12 Weeks

Through Hole

Through Hole

TO-206AA, TO-18-3 Metal Can

3

-

-65°C~175°C TJ

Bulk

2007

-

Active

1 (Unlimited)

-

-

-

-

-

300mW

-

-

-

-

300mW

-

NPN

30V

100mA

80 @ 1mA 5V

10nA

-

-

30V

No

Non-RoHS Compliant

TO-18 (TO-206AA)

200°C

-65°C

30V

100mA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N2484UB vs 2N2432
2N2484UA

Microsemi Corporation

IN PRODUCTION (Last Updated: 1 month ago)

12 Weeks

Surface Mount

Surface Mount

4-SMD, No Lead

4

SILICON

-65°C~200°C TJ

Bulk

2007

e0

Active

1 (Unlimited)

4

EAR99

TIN LEAD

-

Other Transistors

360mW

DUAL

-

1

SINGLE

360mW

NPN

NPN

60V

50mA

225 @ 10mA 5V

2nA

300mV @ 100μA, 1mA

-

60V

No

Non-RoHS Compliant

-

-

-

-

-

no

TO-206AA

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

2N2484UB vs 2N2484UA
2N2405

Central Semiconductor Corp

-

8 Weeks

Through Hole

-

TO-39

-

SILICON

-

-

2006

e0

Active

-

3

EAR99

Tin/Lead (Sn/Pb)

-

Other Transistors

-

BOTTOM

3

1

-

-

-

-

500mV

1A

-

-

-

90V

120V

-

RoHS Compliant

-

-

-

-

-

no

-

WIRE

NOT SPECIFIED

NOT SPECIFIED

O-MBCY-W3

Not Qualified

200°C

NPN

1W

Single

SWITCHING

50MHz

50MHz

500mV

120MHz

7V

60

60

2N2484UB vs 2N2405