Central Semiconductor Corp 2N2405
- Part Number:
- 2N2405
- Manufacturer:
- Central Semiconductor Corp
- Ventron No:
- 2464746-2N2405
- Description:
- TRANS NPN 90V 1A TO-39
- Datasheet:
- 2N2405
Central Semiconductor Corp 2N2405 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N2405.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Package / CaseTO-39
- Transistor Element MaterialSILICON
- Published2006
- JESD-609 Codee0
- Pbfree Codeno
- Part StatusActive
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Terminal PositionBOTTOM
- Terminal FormWIRE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeO-MBCY-W3
- Qualification StatusNot Qualified
- Operating Temperature (Max)200°C
- Number of Elements1
- PolarityNPN
- Power Dissipation-Max1W
- Element ConfigurationSingle
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product50MHz
- Collector Emitter Voltage (VCEO)500mV
- Max Collector Current1A
- Collector Emitter Breakdown Voltage90V
- Transition Frequency50MHz
- Collector Emitter Saturation Voltage500mV
- Frequency - Transition120MHz
- Collector Base Voltage (VCBO)120V
- Emitter Base Voltage (VEBO)7V
- hFE Min60
- DC Current Gain-Min (hFE)60
- RoHS StatusRoHS Compliant
2N2405 Overview
A collector emitter saturation voltage of 500mV allows maximum design flexibility.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 50MHz.The maximum collector current is 1A volts.
2N2405 Features
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 7V
a transition frequency of 50MHz
2N2405 Applications
There are a lot of Central Semiconductor
2N2405 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
A collector emitter saturation voltage of 500mV allows maximum design flexibility.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 50MHz.The maximum collector current is 1A volts.
2N2405 Features
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 7V
a transition frequency of 50MHz
2N2405 Applications
There are a lot of Central Semiconductor
2N2405 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2N2405 More Descriptions
Transistor NPN-silicon Bvceo=120V IC=1A TO-39 Case High Current Fast Switching ApplicationsNTE Electronics
TRANSISTOR, NPN, 90V; Transistor Polarit; TRANSISTOR, NPN, 90V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:60; Operating Temperature Min:-65°C; Operating Temperature Max:200°C; MSL:-
Transistor, Npn, 90V; Transistor Polarity:Npn; Collector Emitter Voltage Max:90V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:50Mhz; Product Range:-Rohs Compliant: Yes |Nte Electronics 2N2405
TRANSISTOR, NPN, 90V; Transistor Polarit; TRANSISTOR, NPN, 90V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:60; Operating Temperature Min:-65°C; Operating Temperature Max:200°C; MSL:-
Transistor, Npn, 90V; Transistor Polarity:Npn; Collector Emitter Voltage Max:90V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:50Mhz; Product Range:-Rohs Compliant: Yes |Nte Electronics 2N2405
The three parts on the right have similar specifications to 2N2405.
-
ImagePart NumberManufacturerFactory Lead TimeMountPackage / CaseTransistor Element MaterialPublishedJESD-609 CodePbfree CodePart StatusNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusOperating Temperature (Max)Number of ElementsPolarityPower Dissipation-MaxElement ConfigurationTransistor ApplicationGain Bandwidth ProductCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageFrequency - TransitionCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)hFE MinDC Current Gain-Min (hFE)RoHS StatusLifecycle StatusMounting TypeNumber of PinsSupplier Device PackageOperating TemperaturePackagingMoisture Sensitivity Level (MSL)Max Operating TemperatureMin Operating TemperatureMax Power DissipationPower - MaxTransistor TypeDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Voltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Radiation HardeningConfigurationPolarity/Channel TypeJEDEC-95 CodeVce Saturation (Max) @ Ib, IcVoltage - Collector Emitter Breakdown (Max):Vce Saturation (Max) @ Ib, Ic:Transistor Type:Supplier Device Package:Series:Power - Max:Packaging:Package / Case:Operating Temperature:Mounting Type:Frequency - Transition:DC Current Gain (hFE) (Min) @ Ic, Vce:Current - Collector Cutoff (Max):Current - Collector (Ic) (Max):View Compare
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2N24058 WeeksThrough HoleTO-39SILICON2006e0noActive3EAR99Tin/Lead (Sn/Pb)Other TransistorsBOTTOMWIRENOT SPECIFIEDNOT SPECIFIED3O-MBCY-W3Not Qualified200°C1NPN1WSingleSWITCHING50MHz500mV1A90V50MHz500mV120MHz120V7V6060RoHS Compliant------------------------------------
-
12 WeeksThrough HoleTO-206AA, TO-18-3 Metal Can-2007--Active------------------30V100mA----30V---Non-RoHS CompliantIN PRODUCTION (Last Updated: 3 weeks ago)Through Hole3TO-18 (TO-206AA)-65°C~175°C TJBulk1 (Unlimited)200°C-65°C300mW300mWNPN80 @ 1mA 5V10nA30V100mANo------------------
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12 WeeksSurface Mount4-SMD, No LeadSILICON2007e0noActive4EAR99TIN LEADOther TransistorsDUAL-------1-----60V50mA----60V---Non-RoHS CompliantIN PRODUCTION (Last Updated: 1 month ago)Surface Mount4--65°C~200°C TJBulk1 (Unlimited)--360mW360mWNPN225 @ 10mA 5V2nA--NoSINGLENPNTO-206AA300mV @ 100μA, 1mA--------------
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----------------------------------------------------------60V300mV @ 100µA, 1mANPNTO-18-360mWTubeTO-206AA, TO-18-3 Metal Can-65°C ~ 200°C (TJ)Through Hole-225 @ 10mA, 5V2nA50mA
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