2N2405

Central Semiconductor Corp 2N2405

Part Number:
2N2405
Manufacturer:
Central Semiconductor Corp
Ventron No:
2464746-2N2405
Description:
TRANS NPN 90V 1A TO-39
ECAD Model:
Datasheet:
2N2405

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Specifications
Central Semiconductor Corp 2N2405 technical specifications, attributes, parameters and parts with similar specifications to Central Semiconductor Corp 2N2405.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Package / Case
    TO-39
  • Transistor Element Material
    SILICON
  • Published
    2006
  • JESD-609 Code
    e0
  • Pbfree Code
    no
  • Part Status
    Active
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Terminal Position
    BOTTOM
  • Terminal Form
    WIRE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    O-MBCY-W3
  • Qualification Status
    Not Qualified
  • Operating Temperature (Max)
    200°C
  • Number of Elements
    1
  • Polarity
    NPN
  • Power Dissipation-Max
    1W
  • Element Configuration
    Single
  • Transistor Application
    SWITCHING
  • Gain Bandwidth Product
    50MHz
  • Collector Emitter Voltage (VCEO)
    500mV
  • Max Collector Current
    1A
  • Collector Emitter Breakdown Voltage
    90V
  • Transition Frequency
    50MHz
  • Collector Emitter Saturation Voltage
    500mV
  • Frequency - Transition
    120MHz
  • Collector Base Voltage (VCBO)
    120V
  • Emitter Base Voltage (VEBO)
    7V
  • hFE Min
    60
  • DC Current Gain-Min (hFE)
    60
  • RoHS Status
    RoHS Compliant
Description
2N2405 Overview
A collector emitter saturation voltage of 500mV allows maximum design flexibility.The base voltage of the emitter can be kept at 7V to achieve high efficiency.In this part, there is a transition frequency of 50MHz.The maximum collector current is 1A volts.

2N2405 Features
a collector emitter saturation voltage of 500mV
the emitter base voltage is kept at 7V
a transition frequency of 50MHz


2N2405 Applications
There are a lot of Central Semiconductor
2N2405 applications of single BJT transistors.


Inverter
Interface
Driver
Muting
2N2405 More Descriptions
Transistor NPN-silicon Bvceo=120V IC=1A TO-39 Case High Current Fast Switching ApplicationsNTE Electronics
TRANSISTOR, NPN, 90V; Transistor Polarit; TRANSISTOR, NPN, 90V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:90V; Power Dissipation Pd:1W; DC Collector Current:1A; DC Current Gain hFE:60; Operating Temperature Min:-65°C; Operating Temperature Max:200°C; MSL:-
Transistor, Npn, 90V; Transistor Polarity:Npn; Collector Emitter Voltage Max:90V; Continuous Collector Current:1A; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Transition Frequency:50Mhz; Product Range:-Rohs Compliant: Yes |Nte Electronics 2N2405
Product Comparison
The three parts on the right have similar specifications to 2N2405.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Package / Case
    Transistor Element Material
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Operating Temperature (Max)
    Number of Elements
    Polarity
    Power Dissipation-Max
    Element Configuration
    Transistor Application
    Gain Bandwidth Product
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Transition Frequency
    Collector Emitter Saturation Voltage
    Frequency - Transition
    Collector Base Voltage (VCBO)
    Emitter Base Voltage (VEBO)
    hFE Min
    DC Current Gain-Min (hFE)
    RoHS Status
    Lifecycle Status
    Mounting Type
    Number of Pins
    Supplier Device Package
    Operating Temperature
    Packaging
    Moisture Sensitivity Level (MSL)
    Max Operating Temperature
    Min Operating Temperature
    Max Power Dissipation
    Power - Max
    Transistor Type
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Current - Collector Cutoff (Max)
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Radiation Hardening
    Configuration
    Polarity/Channel Type
    JEDEC-95 Code
    Vce Saturation (Max) @ Ib, Ic
    Voltage - Collector Emitter Breakdown (Max):
    Vce Saturation (Max) @ Ib, Ic:
    Transistor Type:
    Supplier Device Package:
    Series:
    Power - Max:
    Packaging:
    Package / Case:
    Operating Temperature:
    Mounting Type:
    Frequency - Transition:
    DC Current Gain (hFE) (Min) @ Ic, Vce:
    Current - Collector Cutoff (Max):
    Current - Collector (Ic) (Max):
    View Compare
  • 2N2405
    2N2405
    8 Weeks
    Through Hole
    TO-39
    SILICON
    2006
    e0
    no
    Active
    3
    EAR99
    Tin/Lead (Sn/Pb)
    Other Transistors
    BOTTOM
    WIRE
    NOT SPECIFIED
    NOT SPECIFIED
    3
    O-MBCY-W3
    Not Qualified
    200°C
    1
    NPN
    1W
    Single
    SWITCHING
    50MHz
    500mV
    1A
    90V
    50MHz
    500mV
    120MHz
    120V
    7V
    60
    60
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N2432
    12 Weeks
    Through Hole
    TO-206AA, TO-18-3 Metal Can
    -
    2007
    -
    -
    Active
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    30V
    100mA
    -
    -
    -
    -
    30V
    -
    -
    -
    Non-RoHS Compliant
    IN PRODUCTION (Last Updated: 3 weeks ago)
    Through Hole
    3
    TO-18 (TO-206AA)
    -65°C~175°C TJ
    Bulk
    1 (Unlimited)
    200°C
    -65°C
    300mW
    300mW
    NPN
    80 @ 1mA 5V
    10nA
    30V
    100mA
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N2484UA
    12 Weeks
    Surface Mount
    4-SMD, No Lead
    SILICON
    2007
    e0
    no
    Active
    4
    EAR99
    TIN LEAD
    Other Transistors
    DUAL
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    -
    -
    60V
    50mA
    -
    -
    -
    -
    60V
    -
    -
    -
    Non-RoHS Compliant
    IN PRODUCTION (Last Updated: 1 month ago)
    Surface Mount
    4
    -
    -65°C~200°C TJ
    Bulk
    1 (Unlimited)
    -
    -
    360mW
    360mW
    NPN
    225 @ 10mA 5V
    2nA
    -
    -
    No
    SINGLE
    NPN
    TO-206AA
    300mV @ 100μA, 1mA
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • 2N2484
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    60V
    300mV @ 100µA, 1mA
    NPN
    TO-18
    -
    360mW
    Tube
    TO-206AA, TO-18-3 Metal Can
    -65°C ~ 200°C (TJ)
    Through Hole
    -
    225 @ 10mA, 5V
    2nA
    50mA
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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