Diodes Incorporated 2DD2661-13
- Part Number:
- 2DD2661-13
- Manufacturer:
- Diodes Incorporated
- Ventron No:
- 2464697-2DD2661-13
- Description:
- TRANS NPN 12V 2A SOT89-3
- ECAD Model:
-
- Datasheet:
- 2DD2661-13
Diodes Incorporated 2DD2661-13 technical specifications, attributes, parameters and parts with similar specifications to Diodes Incorporated 2DD2661-13.
- Factory Lead Time15 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-243AA
- Number of Pins4
- Weight51.993025mg
- Transistor Element MaterialSILICON
- Manufacturer Package Identifier2DD2661-13
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryOther Transistors
- Max Power Dissipation900mW
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Frequency170MHz
- Time@Peak Reflow Temperature-Max (s)40
- Base Part Number2DD2661
- Pin Count3
- JESD-30 CodeR-PSSO-F3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation2W
- Case ConnectionCOLLECTOR
- Power - Max900mW
- Transistor ApplicationSWITCHING
- Gain Bandwidth Product170MHz
- Polarity/Channel TypeNPN
- Transistor TypeNPN
- Collector Emitter Voltage (VCEO)12V
- Max Collector Current2A
- DC Current Gain (hFE) (Min) @ Ic, Vce270 @ 200mA 2V
- Current - Collector Cutoff (Max)100nA ICBO
- Vce Saturation (Max) @ Ib, Ic180mV @ 50mA, 1A
- Collector Emitter Breakdown Voltage12V
- Transition Frequency170MHz
- Collector Emitter Saturation Voltage180mV
- Max Breakdown Voltage12V
- Collector Base Voltage (VCBO)15V
- Emitter Base Voltage (VEBO)6V
- Height1.5mm
- Length4.5mm
- Width2.5mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
2DD2661-13 Overview
This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 180mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 170MHz.As a result, it can handle voltages as low as 12V volts.The maximum collector current is 2A volts.
2DD2661-13 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 170MHz
2DD2661-13 Applications
There are a lot of Diodes Incorporated
2DD2661-13 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
This device has a DC current gain of 270 @ 200mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 180mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.In this part, there is a transition frequency of 170MHz.As a result, it can handle voltages as low as 12V volts.The maximum collector current is 2A volts.
2DD2661-13 Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 180mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 170MHz
2DD2661-13 Applications
There are a lot of Diodes Incorporated
2DD2661-13 applications of single BJT transistors.
Inverter
Interface
Driver
Muting
2DD2661-13 More Descriptions
DIODES INC. 2DD2661-13 Bipolar (BJT) Single Transistor, NPN, 12 V, 170 MHz, 900 mW, 1 A, 270 hFE
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 12V 2A 2000mW 4-Pin(3 Tab) SOT-89 T/R
TRANSISTOR, NPN, SOT89, 0.9W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 170MHz; Power Dissipation Pd: 900mW; DC Collector Current: 1A; DC Current Gain hFE: 270hFE; Transistor C
Transistor, Npn, 12V, 1A, 900Mw, Sot-89; Transistor Polarity:Npn; Collector Emitter Voltage Max:12V; Continuous Collector Current:1A; Power Dissipation:900Mw; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Diodes Inc. 2DD2661-13
Small Signal Bipolar Transistor, 2A I(C), 12V V(BR)CEO, 1-Element, NPN, Silicon
Trans GP BJT NPN 12V 2A 2000mW 4-Pin(3 Tab) SOT-89 T/R
TRANSISTOR, NPN, SOT89, 0.9W; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 170MHz; Power Dissipation Pd: 900mW; DC Collector Current: 1A; DC Current Gain hFE: 270hFE; Transistor C
Transistor, Npn, 12V, 1A, 900Mw, Sot-89; Transistor Polarity:Npn; Collector Emitter Voltage Max:12V; Continuous Collector Current:1A; Power Dissipation:900Mw; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Product Range:- Rohs Compliant: Yes |Diodes Inc. 2DD2661-13
The three parts on the right have similar specifications to 2DD2661-13.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialManufacturer Package IdentifierOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)FrequencyTime@Peak Reflow Temperature-Max (s)Base Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationPower DissipationCase ConnectionPower - MaxTransistor ApplicationGain Bandwidth ProductPolarity/Channel TypeTransistor TypeCollector Emitter Voltage (VCEO)Max Collector CurrentDC Current Gain (hFE) (Min) @ Ic, VceCurrent - Collector Cutoff (Max)Vce Saturation (Max) @ Ib, IcCollector Emitter Breakdown VoltageTransition FrequencyCollector Emitter Saturation VoltageMax Breakdown VoltageCollector Base Voltage (VCBO)Emitter Base Voltage (VEBO)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusTerminationhFE MinLead FreeCurrent - Collector (Ic) (Max)Terminal PositionView Compare
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2DD2661-1315 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON2DD2661-13-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors900mWFLAT260170MHz402DD26613R-PSSO-F31Single2WCOLLECTOR900mWSWITCHING170MHzNPNNPN12V2A270 @ 200mA 2V100nA ICBO180mV @ 50mA, 1A12V170MHz180mV12V15V6V1.5mm4.5mm2.5mmNo SVHCNoROHS3 Compliant------ -
13 WeeksSurface MountSurface MountTO-243AA351.993025mgSILICON--55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors2WFLAT260240MHz40-3-1Single2WCOLLECTOR-SWITCHING240MHzNPNNPN30V2A270 @ 200mA 2V100nA ICBO370mV @ 75mA, 1.5A30V240MHz370mV-30V6V1.5mm4.5mm2.5mmNo SVHCNoROHS3 CompliantSMD/SMT270Lead Free--
-
19 WeeksSurface MountSurface MountTO-243AA451.993025mgSILICON2DD2098R-13-55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors1WFLAT260220MHz402DD20983R-PSSO-F31Single1WCOLLECTOR-SWITCHING220MHzNPNNPN20V10A180 @ 500mA 2V500nA ICBO1V @ 100mA, 4A20V220MHz1V20V50V6V1.5mm4.5mm2.5mmNo SVHCNoROHS3 Compliant---5A-
-
15 WeeksSurface MountSurface MountSC-70, SOT-32336.010099mgSILICON--55°C~150°C TJTape & Reel (TR)2008e3yesActive1 (Unlimited)3EAR99Matte Tin (Sn)Other Transistors300mWGULL WING260260MHz402DD26523-1Single500mW-300mWSWITCHING260MHzNPNNPN12V1.5A270 @ 200mA 2V100nA ICBO200mV @ 25mA, 500mA12V260MHz200mV12V15V6V1mm2.15mm1.3mmNo SVHCNoROHS3 Compliant----DUAL
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